公开(公告)号：US09397149B2

公开(公告)日：2016-07-19

申请号：US14581089

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  H01L51/50 ,  H01L29/786

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5012 ,  H01L51/5246 ,  H01L2251/303 ,  Y02E10/549 ,  Y02P70/521

Abstract: A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer.

Abstract translation: 一种显示装置，包括第一柔性基板，第一柔性基板上的第一接合层，第一接合层上的第一绝缘膜，第一绝缘膜上的第一元件层，第一元件层上的第二元件层， 设置在第二元件层上的第二绝缘膜，在第二绝缘膜上方的第二接合层，以及在第二接合层上方的第二柔性基板。 第一元件层包括像素部和电路部。 像素部分包括显示元件和第一晶体管，并且电路部分包括第二晶体管。 第二元件层包括着色层和遮光层。

公开(公告)号：US09366971B2

公开(公告)日：2016-06-14

申请号：US14510463

申请日：2014-10-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Adachi

IPC: G03F7/20 ,  G03B27/00 ,  H01L21/027 ,  H01L27/12 ,  H01L29/66 ,  G03B27/16 ,  G09G3/32

CPC classification number: H01L27/1288 ,  G03B27/00 ,  G03B27/16 ,  G03F7/702 ,  G09G3/3208 ,  H01L21/0273 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.

Abstract translation: 本发明提供了一种用于从背面曝光的高度可控的装置和曝光方法，并且还提供了一种制造使用该装置的半导体器件的方法。 本发明涉及使用背光曝光装置曝光，其中反射装置设置在基板的正面，远离光敏薄膜表面X（X =0.1μm至1000μm）， 并且在远离图案末端的距离Y的位置以自对准的方式形成感光薄膜图案，具有良好的可控性。 本发明使用该方法制造TFT。

公开(公告)号：US20150187855A1

公开(公告)日：2015-07-02

申请号：US14581089

申请日：2014-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L29/786 ,  H01L51/50 ,  H01L51/00 ,  H01L51/52

CPC classification number: H01L27/3262 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/7869 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5012 ,  H01L51/5246 ,  H01L2251/303 ,  Y02E10/549 ,  Y02P70/521

Abstract: A display device that includes a first flexible substrate, a first bonding layer over the first flexible substrate, a first insulating film over the first bonding layer, a first element layer over the first insulating film, a second element layer over the first element layer, a second insulating film over the second element layer, a second bonding layer over the second insulating film, and a second flexible substrate over the second bonding layer is provided. The first element layer includes a pixel portion and a circuit portion. The pixel portion includes a display element and a first transistor, and the circuit portion includes a second transistor. The second element layer includes a coloring layer and a light-blocking layer.

Abstract translation: 一种显示装置，包括第一柔性基板，第一柔性基板上的第一接合层，第一接合层上的第一绝缘膜，第一绝缘膜上的第一元件层，第一元件层上的第二元件层， 设置在第二元件层上的第二绝缘膜，在第二绝缘膜上方的第二接合层，以及在第二接合层上方的第二柔性基板。 第一元件层包括像素部分和电路部分。 像素部分包括显示元件和第一晶体管，并且电路部分包括第二晶体管。 第二元件层包括着色层和遮光层。

公开(公告)号：US20130286372A1

公开(公告)日：2013-10-31

申请号：US13930487

申请日：2013-06-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Adachi

IPC: G03B27/16

CPC classification number: H01L27/1288 ,  G03B27/00 ,  G03B27/16 ,  G03F7/702 ,  G09G3/3208 ,  H01L21/0273 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.

Abstract translation: 本发明提供了一种用于从背面曝光的高度可控的装置和曝光方法，并且还提供了一种制造使用该装置的半导体器件的方法。 本发明涉及使用背光曝光装置，其中反射装置设置在基板的正面，远离光敏薄膜表面X（X =0.1μm至1000μm）， 并且在远离图案末端的距离Y的位置以自对准的方式形成感光薄膜图案，具有良好的可控性。 本发明使用该方法制造TFT。

公开(公告)号：US20130043480A1

公开(公告)日：2013-02-21

申请号：US13659205

申请日：2012-10-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki Adachi

IPC: H01L33/08 ,  H01L29/786

CPC classification number: H01L27/1288 ,  G03B27/00 ,  G03B27/16 ,  G03F7/702 ,  G09G3/3208 ,  H01L21/0273 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/66765

Abstract: The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposure with the use of the back side exposure device of which a reflecting means is disposed on the front side of a substrate, apart from a photosensitive thin film surface by a distance X (X=0.1 μm to 1000 μm), and formation of a photosensitive thin film pattern in a self alignment manner, with good controllability, at a position a distance Y away from the end of a pattern. The invention fabricates a TFT using that method.

公开(公告)号：US12033987B2

公开(公告)日：2024-07-09

申请号：US17270722

申请日：2019-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kazunori Watanabe ,  Koji Kusunoki ,  Taiki Nonaka ,  Hiroki Adachi ,  Koichi Takeshima

IPC: H01L25/075 ,  H01L27/12 ,  H01L29/786 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/78648 ,  H01L29/7869 ,  H01L33/62

Abstract: A display device with high display quality and low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel, and then the light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. One of a source and a drain of the first transistor is electrically connected to the first light-emitting diode through the second conductive layer. One of a source and a drain of the second transistor is electrically connected to the second light-emitting diode through the third conductive layer. The first conductive layer supplied with a constant potential is electrically connected to the other electrodes of the first and second light-emitting diodes through the fourth conductive layer.

公开(公告)号：US11309523B2

公开(公告)日：2022-04-19

申请号：US16766418

申请日：2018-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroki Adachi ,  Shingo Eguchi

IPC: H01L51/52 ,  G09G5/14 ,  H01L51/00 ,  H01L27/32

Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a first region and a second region. The second region is provided with a first component, and the second region can be bent with the first component facing outward. The first component includes a first elastic body and a second elastic body. The second elastic body includes an end portion part or the whole of which is covered with the first elastic body. The second elastic body has a higher elastic modulus than the first elastic body.

公开(公告)号：US11209877B2

公开(公告)日：2021-12-28

申请号：US16980218

申请日：2019-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Sato ,  Hiroki Adachi

IPC: G06F1/18 ,  G06F3/01 ,  G06F3/041 ,  G09G3/3275 ,  H01L27/32

Abstract: A novel electrical module that is highly convenient or reliable is provided. A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. The functional layer includes an element, a conductive film, and an intermediate layer and the element is electrically connected to the conductive film. The intermediate layer includes an opening portion and a first surface, the opening portion overlaps with the conductive film, the opening portion includes a side end portion, and the side end portion is in contact with the conductive film. Moreover, the first surface includes a first region, the first region is positioned at the periphery of the opening portion, and the first region is in contact with the conductive film.

公开(公告)号：US11107846B2

公开(公告)日：2021-08-31

申请号：US16810162

申请日：2020-03-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki Kuwabara ,  Hiroki Adachi ,  Satoru Idojiri

IPC: H01L27/12 ,  H01L21/67 ,  H01L21/683

Abstract: A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.

公开(公告)号：US10763322B2

公开(公告)日：2020-09-01

申请号：US16509819

申请日：2019-07-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L51/50 ,  H01L41/314

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.