公开(公告)号：US20140113687A1

公开(公告)日：2014-04-24

申请号：US14139892

申请日：2013-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Takashi SHIMAZU ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H04M1/02

CPC classification number: H01L29/78696 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693 ,  H04M1/0266

Abstract: A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.

Abstract translation: 一种包括具有氧化物半导体层并具有高电特性和可靠性的薄膜晶体管的半导体器件。 通常使用包含绝缘体（绝缘氧化物，绝缘氮化物，氮氧化硅，氮氧化铝等）（通常为SiO 2）的氧化物半导体靶进行膜沉积，使得其中Si元素浓度在厚度 氧化物半导体层的方向具有根据与栅电极的距离的增加而增加的梯度。

公开(公告)号：US20140113407A1

公开(公告)日：2014-04-24

申请号：US14146093

申请日：2014-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Akiharu MIYANAGA ,  Masayuki SAKAKURA ,  Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/7869

Abstract: An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.

Abstract translation: 目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。 可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。 可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。 与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

公开(公告)号：US20140011320A1

公开(公告)日：2014-01-09

申请号：US14022392

申请日：2013-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L29/66

CPC classification number: H01L21/02664 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

公开(公告)号：US20130320321A1

公开(公告)日：2013-12-05

申请号：US13964161

申请日：2013-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuji IWAKI ,  Satoshi SEO ,  Takahiro KAWAKAMI ,  Hisao IKEDA ,  Junichiro SAKATA ,  Tomoya AOYAMA

IPC: H01L51/00

CPC classification number: H01L51/0052 ,  H01L51/0071 ,  H01L51/0081 ,  H01L51/5052 ,  H01L51/5088 ,  H05B33/22 ,  Y10S428/917

Abstract: A light emitting device comprises a pair of electrodes and a mixed layer provided between the pair of electrodes. The mixed layer contains an organic compound which contains no nitrogen atoms, i.e., an organic compound which dose not have an arylamine skeleton, and a metal oxide. As the organic compound, an aromatic hydrocarbon having an anthracene skeleton is preferably used. As such an aromatic hydrocarbon, t-BuDNA, DPAnth, DPPA, DNA, DMNA, t-BuDBA, and the like are listed. As the metal oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide, and the like are preferably used. Further, the mixed layer preferably shows absorbance per 1 μm of 1 or less or does not show a distinct absorption peak in a spectrum of 450 to 650 nm when an absorption spectrum is measured.

Abstract translation: 发光器件包括一对电极和设置在该对电极之间的混合层。 混合层含有不含氮原子的有机化合物即不具有芳胺骨架的有机化合物和金属氧化物。 作为有机化合物，优选使用具有蒽骨架的芳香族烃。 作为这样的芳烃，列举了t-BuDNA，DPAnth，DPPA，DNA，DMNA，t-BuDBA等。 作为金属氧化物，优选使用氧化钼，氧化钒，氧化钌，氧化铼等。 此外，当测量吸收光谱时，混合层优选显示1个或更少的1个吸光度，或者在450-650nm的光谱中不显示不同的吸收峰。

公开(公告)号：US20130280857A1

公开(公告)日：2013-10-24

申请号：US13917012

申请日：2013-06-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Shuhei YOSHITOMI ,  Takahiro TUJI ,  Miyuki HOSOBA ,  Junichiro SAKATA ,  Hiroyuki TOMATSU ,  Masahiko HAYAKAWA

IPC: H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1248 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.

公开(公告)号：US20130130438A1

公开(公告)日：2013-05-23

申请号：US13718051

申请日：2012-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.

Abstract translation: 在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

公开(公告)号：US20130119428A1

公开(公告)日：2013-05-16

申请号：US13713101

申请日：2012-12-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO. LTD.

Inventor： Junichiro SAKATA ,  Hisao IKEDA ,  Tomoya AOYAMA ,  Takahiro KAWAKAMI ,  Yuji IWAKI ,  Satoshi SEO

IPC: H01L33/42

CPC classification number: H01L33/42 ,  H01L51/5088 ,  H01L51/5262 ,  H01L2251/558

Abstract: The present invention provides a light-emitting element, a light-emitting device and an electronic device in which an optical path length through which generated light goes can be changed easily. The present invention provides a light-emitting element including a light-emitting layer between a first electrode and a second electrode, and a mixed layer in contact with the first electrode; in which the light-emitting layer includes a light-emitting substance; the mixed layer includes a hole transporting substance and a metal oxide showing an electron accepting property to the hole transporting substance, and has a thickness of 120 to 180 nm, and when a voltage is applied between the first electrode and the second electrode such that a potential of the first electrode is higher than that of the second electrode, the light-emitting substance emits light.

Abstract translation: 本发明提供一种发光元件，发光器件和电子器件，其中可以容易地改变发光产生的光路长度。 本发明提供一种发光元件，其包括在第一电极和第二电极之间的发光层和与第一电极接触的混合层; 其中所述发光层包括发光物质; 混合层包括空穴传输物质和表现出对空穴传输物质具有电子接受性的金属氧化物，并且具有120至180nm的厚度，并且当在第一电极和第二电极之间施加电压使得 第一电极的电位高于第二电极的电位，发光物质发光。

公开(公告)号：US20250062121A1

公开(公告)日：2025-02-20

申请号：US18934417

申请日：2024-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC: H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.

公开(公告)号：US20240321903A1

公开(公告)日：2024-09-26

申请号：US18678215

申请日：2024-05-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA

IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1368

CPC classification number: H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1255 ,  G02F2202/10

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

公开(公告)号：US20230238387A1

公开(公告)日：2023-07-27

申请号：US18129975

申请日：2023-04-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Toshinari SASAKI ,  Miyuki HOSOBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/1218 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/124 ,  H01L27/127 ,  H01L29/24 ,  H01L29/78633 ,  H01L29/78654

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.