公开(公告)号：US20210358729A1

公开(公告)日：2021-11-18

申请号：US17384867

申请日：2021-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Haruyuki BABA

IPC: H01J37/34 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  C23C14/34 ,  C23C14/08 ,  B28B11/24 ,  B28B1/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/58 ,  H01L29/423

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

公开(公告)号：US20210043453A1

公开(公告)日：2021-02-11

申请号：US17000580

申请日：2020-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Hideyuki KISHIDA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US20200350342A1

公开(公告)日：2020-11-05

申请号：US16935469

申请日：2020-07-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Haruyuki BABA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US20200243686A1

公开(公告)日：2020-07-30

申请号：US16849113

申请日：2020-04-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Tatsuya HONDA

IPC: H01L29/786 ,  H01L29/04 ,  C01G19/00 ,  H01L29/26

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

公开(公告)号：US20170170326A1

公开(公告)日：2017-06-15

申请号：US15374356

申请日：2016-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masashi TSUBUKU ,  Kazuya SUGIMOTO ,  Tsutomu MURAKAWA ,  Motoki NAKASHIMA ,  Shinpei MATSUDA ,  Noritaka ISHIHARA ,  Daisuke KUROSAKI ,  Toshimitsu OBONAI ,  Hiroshi KANEMURA ,  Junichi KOEZUKA

IPC: H01L29/786 ,  H01L27/105 ,  H03K17/687 ,  H01L29/24 ,  H01L29/423

CPC classification number: H01L29/7869 ,  G09G3/2092 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/78696 ,  H03K17/687

Abstract: A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.

公开(公告)号：US20160240607A1

公开(公告)日：2016-08-18

申请号：US15140535

申请日：2016-04-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA

IPC: H01L29/04 ,  H01L29/786 ,  H01L29/788 ,  H01L21/02 ,  H01L27/12 ,  H01L27/105 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/045 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1052 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/788

Abstract: Stable electrical characteristics are given to a transistor and a highly reliable semiconductor device is provided. In addition, an oxide material which enables manufacture of such a semiconductor device is provided. An oxide film is used in which two or more kinds of crystalline portions which are different from each other in a direction of an a-axis or a direction of a b-axis in an a-b plane (or the top surface, or the formation surface) are included, and each of the crystalline portions is c-axis aligned, has at least one of triangular atomic arrangement and hexagonal atomic arrangement when seen from a direction perpendicular to the a-b plane, a top surface, or a formation surface, includes metal atoms arranged in a layered manner, or metal atoms and oxygen atoms arranged in a layered manner along the c-axis, and is expressed as In2SnZn2O7(ZnO)m (m is 0 or a natural number).

Abstract translation: 将稳定的电特性赋予晶体管，并提供高度可靠的半导体器件。 此外，提供了能够制造这种半导体器件的氧化物材料。 使用氧化物膜，其中在ab平面（或顶表面或形成表面）中在a轴或b轴方向上彼此不同的两种或多种结晶部分 ），并且每个晶体部分是c轴对准的，当从垂直于ab平面，顶表面或形成表面的方向观察时，具有三角形原子排列和六边形原子排列中的至少一种，包括金属 以层状排列的原子，或沿着c轴分层排列的金属原子和氧原子，以In 2 SnZn 2 O 7（ZnO）m（m为0或自然数）表示。

公开(公告)号：US20150325702A1

公开(公告)日：2015-11-12

申请号：US14801066

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/36 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

Abstract translation: 提供了一种高度可靠的半导体器件和半导体器件的制造方法。 以高产率制造半导体器件，从而实现高生产率。 在包括在氧化物半导体膜上设置有源电极层和漏极电极层并与氧化物半导体膜接触的晶体管的半导体器件中，抑制了氧化物半导体膜的端面部分中杂质的进入和氧空位的形成 。 这可以防止在氧化物半导体膜的端面部分形成寄生沟道而导致的晶体管的电特性的波动。

公开(公告)号：US20130140553A1

公开(公告)日：2013-06-06

申请号：US13686246

申请日：2012-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/24 ,  H01L29/36 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

公开(公告)号：US20130087782A1

公开(公告)日：2013-04-11

申请号：US13628466

申请日：2012-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motoki NAKASHIMA

IPC: H01L29/26

CPC classification number: H01L29/7869

Abstract: An object is to suppress occurrence of oxygen deficiency. An oxide semiconductor film is formed using germanium (Ge) instead of part of or all of gallium (Ga) or tin (Sn). At least one of bonds between a germanium (Ge) atom and oxygen (O) atoms has a bond energy higher than at least one of bonds between a tin (Sn) atom and oxygen (O) atoms or a gallium (Ga) atom and oxygen (O) atoms. Thus, a crystal of an oxide semiconductor formed using germanium (Ge) has a low possibility of occurrence of oxygen deficiency. Accordingly, an oxide semiconductor film is formed using germanium (Ge) in order to suppress occurrence of oxygen deficiency.

Abstract translation: 目的是抑制氧气缺乏的发生。 使用锗（Ge）代替镓（Ga）或锡（Sn）的一部分或全部来形成氧化物半导体膜。 锗（Ge）原子和氧（O）原子之间的至少一个键具有比锡（Sn）原子和氧（O）原子或镓（Ga）原子之间的键中的至少一个更高的键能， 氧（O）原子。 因此，使用锗（Ge）形成的氧化物半导体的晶体的氧缺乏的可能性低。 因此，为了抑制缺氧的发生，使用锗（Ge）形成氧化物半导体膜。

公开(公告)号：US20250146126A1

公开(公告)日：2025-05-08

申请号：US19018112

申请日：2025-01-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/34 ,  B28B11/24 ,  C04B35/453 ,  C04B35/64 ,  C23C14/08 ,  H01L21/02 ,  H10D30/67 ,  H10D62/80 ,  H10D99/00

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.