公开(公告)号：US09356098B2

公开(公告)日：2016-05-31

申请号：US14574424

申请日：2014-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a transistor in which an oxide semiconductor is used and on-state current is high. In a semiconductor device including a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion, the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure in which conductive films serving as a gate electrode, a source electrode, and a drain electrode do not overlap. Furthermore, in an oxide semiconductor film, an impurity element is contained in a region which does not overlap with the gate electrode, the source electrode, and the drain electrode.

Abstract translation: 为了提供包括其中使用氧化物半导体的晶体管和导通电流高的半导体器件。 在包括设置在驱动电路部分中的第一晶体管和设置在像素部分中的第二晶体管的半导体器件中，第一晶体管和第二晶体管具有不同的结构。 此外，第一晶体管和第二晶体管是具有顶栅结构的晶体管，其中用作栅电极，源电极和漏电极的导电膜不重叠。 此外，在氧化物半导体膜中，在与栅电极，源电极和漏电极不重叠的区域中含有杂质元素。

公开(公告)号：US20150155313A1

公开(公告)日：2015-06-04

申请号：US14546443

申请日：2014-11-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yukinori Shima ,  Masami Jintyou ,  Takashi Hamochi ,  Satoshi Higano ,  Yasuharu Hosaka ,  Toshimitsu Obonai

IPC: H01L27/12 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1255 ,  H01L28/20 ,  H01L28/24 ,  H01L28/60 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78693

Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

Abstract translation: 提供了一种新颖的半导体器件，其中在包括氧化物半导体膜的晶体管中使用含有铜（Cu）的金属膜用于布线，信号线等。 半导体器件包括在绝缘表面上具有导电性的氧化物半导体膜和与具有导电性的氧化物半导体膜接触的导电膜。 导电膜包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。

公开(公告)号：US11764074B2

公开(公告)日：2023-09-19

申请号：US17011019

申请日：2020-09-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L29/786 ,  H01L29/24 ,  H01L21/477 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78606

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US11437523B2

公开(公告)日：2022-09-06

申请号：US16986387

申请日：2020-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L21/02 ,  H01L29/24 ,  H01L21/385 ,  H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US11380795B2

公开(公告)日：2022-07-05

申请号：US16582225

申请日：2019-09-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US10916430B2

公开(公告)日：2021-02-09

申请号：US15654110

申请日：2017-07-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takashi Hamochi ,  Yasutaka Nakazawa ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L21/285 ,  H01L23/485 ,  H01L21/28 ,  H01L27/108 ,  H01L29/417 ,  H01L29/786 ,  H01L29/45 ,  H01L29/66 ,  C23F1/38

Abstract: A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.

公开(公告)号：US10818795B2

公开(公告)日：2020-10-27

申请号：US16182075

申请日：2018-11-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device comprising a pixel portion comprising a capacitor and a transistor is provided. The capacitor comprises a first oxide semiconductor film and a transparent conductive material. The transistor comprises a second oxide semiconductor film, a source electrode, and a drain electrode. The transistor is electrically connected to the capacitor. The capacitor is provided to overlap with a first opening portion in an insulating film and a second opening portion in an organic resin film. The transparent conductive material comprises a region over the organic resin film. The second oxide semiconductor film comprises a channel formation region and a first region outside the channel formation region. Each of a carrier density of the first oxide semiconductor film and a carrier density of the first region is higher than a carrier density of the channel formation region.

公开(公告)号：US10770310B2

公开(公告)日：2020-09-08

申请号：US16524733

申请日：2019-07-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L21/477 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02 ,  H01L21/28

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US10741694B2

公开(公告)日：2020-08-11

申请号：US16123406

申请日：2018-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L21/385 ,  H01L23/31 ,  H01L29/04 ,  H01L29/45

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

公开(公告)号：US10453927B2

公开(公告)日：2019-10-22

申请号：US15874227

申请日：2018-01-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshinari Sasaki ,  Takashi Hamochi ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Junichi Koezuka ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L29/24

Abstract: In a transistor including an oxide semiconductor film, movement of hydrogen and nitrogen to the oxide semiconductor film is suppressed. Further, in a semiconductor device using a transistor including an oxide semiconductor film, a change in electrical characteristics is suppressed and reliability is improved. A transistor including an oxide semiconductor film and a nitride insulating film provided over the transistor are included, and an amount of hydrogen molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 5×1021 molecules/cm3, preferably less than or equal to 3×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3, and an amount of ammonia molecules released from the nitride insulating film by thermal desorption spectroscopy is less than 1×1022 molecules/cm3, preferably less than or equal to 5×1021 molecules/cm3, more preferably less than or equal to 1×1021 molecules/cm3.