公开(公告)号：US20220262828A1

公开(公告)日：2022-08-18

申请号：US17729017

申请日：2022-04-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yuichi SATO ,  Hitoshi NAKAYAMA

IPC: H01L27/12 ,  H01L27/108 ,  H01L29/24

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

公开(公告)号：US20200043931A1

公开(公告)日：2020-02-06

申请号：US16478532

申请日：2018-01-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi SATO ,  Ryota HODO ,  Yuta IIDA ,  Tomoaki MORIWAKA

IPC: H01L27/108 ,  H01L23/532 ,  H01L21/311 ,  H01L21/02 ,  H01L21/321

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a metal oxide and a first conductor that is electrically connected to the metal oxide. The capacitor includes a first insulator which is provided over the metal oxide and which the first conductor penetrates; a second insulator provided over the first insulator and including an opening reaching the first insulator and the first conductor; a second conductor in contact with an inner wall of the opening, the first insulator, and the first conductor; a third insulator provided over the second conductor; and a fourth conductor provided over the third insulator. The first insulator has higher capability of inhibiting the passage of hydrogen than the second insulator.

公开(公告)号：US20180145180A1

公开(公告)日：2018-05-24

申请号：US15827426

申请日：2017-11-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

公开(公告)号：US20160163873A1

公开(公告)日：2016-06-09

申请号：US15044428

申请日：2016-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78618

Abstract: A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.

Abstract translation: 提供了具有良好的导通状态特性的使用氧化物半导体的晶体管。 提供了包括能够进行高速响应和高速运行的晶体管的高性能半导体器件。 晶体管包括包括沟道形成区域的氧化物半导体膜和包含金属元素和掺杂剂的低电阻区域。 沟道形成区域位于沟道长度方向的低电阻区域之间。 在晶体管的制造方法中，通过在氧化物半导体膜与包含金属元素的膜接触的状态下进行的热处理来添加金属元素，并且通过植入通过包含金属元素的膜添加掺杂剂 形成包含金属元素和掺杂剂的低电阻区域。

公开(公告)号：US20150311074A1

公开(公告)日：2015-10-29

申请号：US14734492

申请日：2015-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Yuichi SATO ,  Kosei NODA

IPC: H01L21/02

CPC classification number: H01L29/66477 ,  H01L21/02565 ,  H01L21/265 ,  H01L29/66969 ,  H01L29/7869

Abstract: An oxide semiconductor film is formed over a substrate. A sacrifice film is formed to such a thickness that the local maximum of the concentration distribution of an injected substance injected into the oxide semiconductor film in the depth direction of the oxide semiconductor film is located in a region from an interface between the substrate and the oxide semiconductor film to a surface of the oxide semiconductor film. Oxygen ions are injected as the injected substance into the oxide semiconductor film through the sacrifice film at such an acceleration voltage that the local maximum of the concentration distribution of the injected substance in the depth direction of the oxide semiconductor film is located in the region, and then the sacrifice film is removed. Further, a semiconductor device is manufactured using the oxide semiconductor film.

Abstract translation: 在基板上形成氧化物半导体膜。 牺牲膜形成为使得在氧化物半导体膜的深度方向上注入到氧化物半导体膜中的注入物质的浓度分布的局部最大值位于从衬底和氧化物之间的界面的区域中的局部最大值 半导体膜到氧化物半导体膜的表面。 将氧离子作为注入物质通过牺牲膜以这样的加速电压注入到氧化物半导体膜中，使得注入物质在氧化物半导体膜的深度方向上的浓度分布的局部最大值位于该区域中，以及 然后去除牺牲膜。 此外，使用氧化物半导体膜制造半导体器件。

公开(公告)号：US20150140733A1

公开(公告)日：2015-05-21

申请号：US14583338

申请日：2014-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto YAMADE ,  Junichi KOEZUKA ,  Miki SUZUKI ,  Yuichi SATO

IPC: H01L29/66 ,  H01L21/265

CPC classification number: H01L29/66969 ,  H01L21/265 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract translation: 为了提供一种能够具有稳定的电特性并实现高可靠性的氧化物半导体的半导体器件，通过对与氧化物半导体层接触的基底绝缘层进行脱水或脱氢处理， 可以降低基极绝缘层，并且随后进行氧掺杂处理，可以将与水和氢一起消除的氧气供应到基底绝缘层。 通过形成与水和氢含量降低并且氧含量增加的基极绝缘层接触的氧化物半导体层，在水和氢进入氧化物半导体层的过程中可以向氧化物半导体层提供氧气 被压制

公开(公告)号：US20250015193A1

公开(公告)日：2025-01-09

申请号：US18748238

申请日：2024-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yuichi SATO ,  Toshikazu OHNO ,  Hitoshi KUNITAKE ,  Tsutomu MURAKAWA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H10B12/00 ,  H10K59/121

Abstract: Provided are a transistor with favorable electrical characteristics, a transistor with a high on-state current, a transistor with low parasitic capacitance, or a transistor, a semiconductor device, or a memory device which can be miniaturized or highly integrated. An oxide semiconductor layer included in the transistor, the semiconductor device, or the memory device includes a first region, a second region over the first region, and a third region over the second region. The first region is located in a range from a surface on which the oxide semiconductor layer is to be formed to greater than or equal to 0 nm to less than or equal to 3 nm in a direction substantially perpendicular to the surface. In cross-sectional observation of the oxide semiconductor layer using a transmission electron 10 microscope, bright spots arranged in a layered manner in a direction parallel to the surface are observed in each of the first region, the second region, and the third region.

公开(公告)号：US20240162252A1

公开(公告)日：2024-05-16

申请号：US18399990

申请日：2023-12-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yuichi SATO ,  Hitoshi NAKAYAMA

IPC: H01L27/12 ,  H01L29/24 ,  H10B12/00

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L29/24 ,  H10B12/30

Abstract: A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

公开(公告)号：US20220416059A1

公开(公告)日：2022-12-29

申请号：US17641569

申请日：2020-09-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Naoki OKUNO ,  Yuichi SATO ,  Takashi HIROSE ,  Yuko TAKABAYASHI

IPC: H01L29/66 ,  H01L27/108 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.

公开(公告)号：US20170221707A1

公开(公告)日：2017-08-03

申请号：US15488854

申请日：2017-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta Endo ,  Kosei NODA ,  Yuichi SATO

IPC: H01L21/02 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/49

Abstract: A transistor that is formed using an oxide semiconductor film is provided. A transistor that is formed using an oxide semiconductor film with reduced oxygen vacancies is provided. A transistor having excellent electrical characteristics is provided. A semiconductor device includes a first insulating film, a first oxide semiconductor film, a gate insulating film, and a gate electrode. The first insulating film includes a first region and a second region. The first region is a region that transmits less oxygen than the second region does. The first oxide semiconductor film is provided at least over the second region.