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公开(公告)号：US20150311398A1
公开(公告)日：2015-10-29
申请号：US14791824
申请日：2015-07-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Jong Kyu KIM , Yeo Jin YOON , Jae Kwon KIM , Mae Yi KIM
CPC classification number: H01L27/15 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.
Abstract translation: 示例性实施例公开了一种包括第一发光单元和设置在基板上的第二发光单元的发光二极管，第一发光单元和第二发光单元彼此间隔开。 发光二极管还包括设置在第一发光单元上的第一氧化锌（ZnO）层，第一ZnO层电连接到第一发光单元。 发光二极管还包括设置在第一发光单元的一部分和第一ZnO层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在互连之间的绝缘层 和第一发光单元的侧面。 电流阻挡层和绝缘层的第一侧彼此连接。
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公开(公告)号：US20140175465A1
公开(公告)日：2014-06-26
申请号：US14135925
申请日：2013-12-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Jong Kyu KIM , Yeo Jin YOON , Jae Kwon KIM , Mae Yi KIM
CPC classification number: H01L27/15 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.
Abstract translation: 本发明的示例性实施例提供一种发光二极管，其包括第一发光单元和布置在基板上并彼此间隔开的第二发光单元，第一透明电极层，设置在第一发光单元上并电连接到 第一发光单元，设置在第一发光单元的一部分和第一透明电极层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在第一发光单元之间的绝缘层 互连和第一发光单元的侧表面。 电流阻挡层和绝缘层彼此连接。
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公开(公告)号：US20250048793A1
公开(公告)日：2025-02-06
申请号：US18924883
申请日：2024-10-23
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seong Kyu JANG , Chan Seob SHIN , Seom Geun LEE , Ho Joon LEE
IPC: H01L33/24 , G02B27/01 , G06F1/16 , H01L25/075 , H01L33/62
Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.
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公开(公告)号：US20240363600A1
公开(公告)日：2024-10-31
申请号：US18769385
申请日：2024-07-11
Applicant: Seoul Viosys Co., Ltd.
Inventor： Seom Geun LEE , Seong-Kyu JANG , Yong Woo RYU , Jong Hyeon CHAE
IPC: H01L25/075 , H01L33/42 , H01L33/62
CPC classification number: H01L25/0756 , H01L25/0753 , H01L33/42 , H01L33/62
Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material.
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公开(公告)号：US20240355867A1
公开(公告)日：2024-10-24
申请号：US18760330
申请日：2024-07-01
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seong Kyu JANG , Seom Geun LEE , Yong Woo RYU
CPC classification number: H01L27/15 , H01L33/62 , H01L2933/0066
Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and a plurality of pads disposed over the first LED stack. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region. The plurality of pads is disposed on the peripheral region of the first LED stack.
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Patent Agency Ranking
公开(公告)号：US20230005892A1
公开(公告)日：2023-01-05
申请号：US17902893
申请日：2022-09-04
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Seong Kyu JANG , Yong Woo RYU , Jong Hyeon CHAE
IPC: H01L25/075 , H01L33/62 , H01L33/42
Abstract: A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material, in which a width of an upper end of the upper conductive material is greater than a width of the corresponding upper conductive material.
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公开(公告)号：US20220367753A1
公开(公告)日：2022-11-17
申请号：US17743993
申请日：2022-05-13
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Tae Gyun KIM , Seon Min BAE , Seom Geun LEE , Kyu Ho LEE
Abstract: A UV light emitting diode includes a substrate having a plurality of holes surrounded by a flat surface, a first conductivity type semiconductor layer disposed on the substrate, a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A distance from the flat surface to the active layer is smaller than a distance from bottom surfaces of the plurality of holes to the active layer. The flat surface is in contact with the first conductivity type semiconductor layer.
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公开(公告)号：US20220165914A1
公开(公告)日：2022-05-26
申请号：US17586804
申请日：2022-01-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Keum Ju LEE , Seom Geun LEE , Kyoung Wan KIM , Yong Woo RYU , Mi Na JANG
Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.
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公开(公告)号：US20210375980A1
公开(公告)日：2021-12-02
申请号：US17318475
申请日：2021-05-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seong Kyu JANG , Seom Geun LEE , Yong Woo RYU
Abstract: A stacked light emitting device includes a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and a plurality of pads disposed over the first LED stack. Each of the first, second, and third LED stacks has a light generation region and a peripheral region disposed around the light generation region. The plurality of pads is disposed on the peripheral region of the first LED stack.
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公开(公告)号：US20210151421A1
公开(公告)日：2021-05-20
申请号：US17096289
申请日：2020-11-12
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seom Geun LEE , Seong Kyu JANG , Yong Woo RYU , Jong Hyeon CHAE
IPC: H01L25/075 , H01L33/62 , H01L33/42
Abstract: A light emitting device including a first LED stack, a second LED stack, and a third LED stack each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the second LED stack, a second planarization layer disposed on the first LED stack, lower buried vias passing through the first planarization layer, the second LED stack, and the first bonding layer and electrically connected to the semiconductor layers of the third LED stack, respectively, and upper buried vias passing through the second planarization layer and the first LED stack, in which a width of an upper end of each of the lower buried vias and the upper buried vias is greater than a width of a corresponding through hole.
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