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    LIGHT-EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREFOR
    21.
    发明申请
    LIGHT-EMITTING DEVICE PACKAGE AND MANUFACTURING METHOD THEREFOR 有权

    公开(公告)号：US20210091278A1

    公开(公告)日：2021-03-25

    申请号：US17113448

    申请日：2020-12-07

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Yuriy BILENKO ,  Ki Yon PARK

    IPC: H01L33/60 ,  H01L33/48 ,  H01L33/58

    Abstract: A light-emitting device package includes a substrate having a mounting region in which a light-emitting device chip is mounted. The light-emitting device package further includes a reflector and a cover enclosing the reflector. The reflector is disposed around the light-emitting device chip and having an opening through which the mounting region of the substrate is exposed. The reflector has elasticity to allow variation of a diameter thereof.

    DETECTOR
    22.
    发明申请
    DETECTOR 审中-公开

    公开(公告)号：US20200232921A1

    公开(公告)日：2020-07-23

    申请号：US16805432

    申请日：2020-02-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Man KIM ,  Ki Yon PARK

    IPC: G01N21/64 ,  G01N21/94 ,  G01N21/88

    Abstract: A detector has an internal sensing space, and includes a light source unit for emitting light into the sensing space, a reflector for reflecting the light, a sample supply for providing a sample into a path of the light, a first sensor unit for sensing the light reflected by the reflector, and a second sensor unit for sensing at least one of scattered light and fluorescence by the sample. The light source and the first and second sensor units are arranged in the sensing space.

    SEMICONDUCTOR PHOTO-DETECTING DEVICE
    24.
    发明申请
    SEMICONDUCTOR PHOTO-DETECTING DEVICE 有权
    半导体光电检测器件

    公开(公告)号：US20160043263A1

    公开(公告)日：2016-02-11

    申请号：US14922946

    申请日：2015-10-26

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Kyu Ho LEE ,  Sung Hyun LEE ,  Hyung Kyu KIM

    IPC: H01L31/108 ,  H01L31/0232 ,  H01L31/0304

    CPC classification number: H01L31/108 ,  H01L31/02322 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1013 ,  H01L31/1848 ,  H01L31/1856 ,  Y02E10/544

    Abstract: A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

    Abstract translation: 光检测装置包括第一氮化物层，设置在第一氮化物层上的光吸收层和设置在光吸收层上的肖特基结层。 根据光检测装置的光致发光（PL）特性测量，第一峰值光强度大于第二峰值光强度，第一峰值光强度是从光吸收层发射的光的峰值光强度， 并且第二峰值光强度是从第一氮化物层发射的光的峰值光强度。

    LIGHT DETECTION DEVICE
    27.
    发明申请
    LIGHT DETECTION DEVICE 有权
    光检测装置

    公开(公告)号：US20140183548A1

    公开(公告)日：2014-07-03

    申请号：US14140054

    申请日：2013-12-24

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ki Yon PARK ,  Hwa Mok KIM ,  Young Hwan SON ,  Daewoong SUH

    IPC: H01L31/0304

    CPC classification number: H01L31/03048 ,  H01L31/108 ,  H01L31/1848 ,  Y02E10/544

    Abstract: A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

    Abstract translation: 光检测装置包括衬底，设置在衬底上的缓冲层，设置在缓冲层的一部分上的第一带隙变化层，设置在第一带隙变化层上的光吸收层，设置在第一带隙变化层上的肖特基层 部分光吸收层，以及设置在肖特基层的一部分上的第一电极层。

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