公开(公告)号：US20150235688A1

公开(公告)日：2015-08-20

申请号：US14701401

申请日：2015-04-30

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.

Abstract translation: 根据一些方面，分层结构包括存储层，磁化固定层和隧道绝缘层。 存储层具有垂直于膜面的磁化，其中通过在分层结构的层叠方向上施加电流，磁化方向被配置为根据信息而被改变。 磁化固定层具有与存储层的磁化方向平行或反平行的磁化，并且包括包括多个铁磁层和一个或多个非磁性层的层叠铁极化结构，并且包括包含反铁磁性材料的层 位于第一铁磁层和非磁性层之间的多个铁磁层的第一铁磁层。 隧道绝缘层位于存储层和磁化固定层之间。

公开(公告)号：US20150109851A1

公开(公告)日：2015-04-23

申请号：US14497978

申请日：2014-09-26

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C13/00

CPC classification number: G11C13/003 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C13/0069 ,  G11C2213/74 ,  G11C2213/79

Abstract: A memory device includes multiple bit lines extending in a first direction, multiple word lines extending in a second direction crossing the first direction, and multiple memory cells each coupled to corresponding two word lines and corresponding two bit lines. Each memory cell includes a memory element configured to store information on the basis of changes in resistance and two select transistors. One terminal of the memory element is coupled to one of the two bit lines corresponding to the memory cell; the other terminal is coupled to respective drains of the select transistors; respective sources of the select transistors are coupled to the other bit line; a gate of one of the select transistors is coupled to one of the two word lines corresponding to the memory cell; and a gate of the other is coupled to the other word line.

Abstract translation: 存储器件包括在第一方向上延伸的多个位线，在与第一方向相交的第二方向上延伸的多个字线，以及分别耦合到对应的两个字线和对应的两个位线的多个存储器单元。 每个存储单元包括被配置为基于电阻变化存储信息的存储元件和两个选择晶体管。 存储元件的一个端子耦合到对应于存储器单元的两个位线之一; 另一个端子耦合到选择晶体管的相应的漏极; 选择晶体管的各个源耦合到另一位线; 选择晶体管之一的栅极耦合到对应于存储单元的两条字线之一; 并且另一个的门耦合到另一个字线。

公开(公告)号：US20150109846A1

公开(公告)日：2015-04-23

申请号：US14399268

申请日：2013-03-06

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: G11C11/16 ,  G11C5/08

CPC classification number: H04W72/048 ,  G11C5/08 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1697 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H04W72/085 ,  H04W72/121

Abstract: To provide a memory apparatus capable of operating at high speed with less current and inhibiting a decrease in an amplitude of a readout signal.A memory apparatus includes a memory device at least including a memory layer, a magnetic fixed layer, and an intermediate layer made of a non-magnetic body disposed between the memory layer and the magnetic fixed layer; current being capable of flowing in a lamination direction; a wiring for supplying current flowing to the lamination direction; and a memory control unit for storing information by flowing standby current at a predetermined level to the memory device via the wiring to incline the magnetization direction of the memory layer from the direction perpendicular to a film surface and flowing recording current that is higher than the standby current via the wiring to change the magnetization direction of the memory layer.

Abstract translation: 提供能够以较低电流高速运行并且抑制读出信号的振幅降低的存储装置。 存储装置包括存储器件，其至少包括存储层，磁性固定层和由设置在存储层和磁性固定层之间的非磁性体制成的中间层; 电流能够沿层叠方向流动; 用于提供流向层叠方向的电流的布线; 存储器控制单元，用于通过经由布线将预定电平的待机电流从存储器层的磁化方向从垂直于膜表面的方向倾斜并且高于待机的流动记录电流来存储信息 电流通过布线改变存储层的磁化方向。

公开(公告)号：US20150097254A1

公开(公告)日：2015-04-09

申请号：US14476970

申请日：2014-09-04

Applicant: Sony Corporation

Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A memory element having a layer structure, the layer structure includes: a memory layer whose magnetization direction is changed in accordance with information; a magnetization-fixed layer having magnetization perpendicular to a film surface to be a basis of the information stored in the memory layer; and an intermediate layer made of a non-magnetic material, disposed between the memory layer and the magnetization-fixed layer, wherein at least a periphery of the memory layer is covered with a magnetic material through a non-magnetic material among the layer structure.

Abstract translation: 一种具有层结构的存储元件，该层结构包括：其磁化方向根据信息改变的存储层; 具有垂直于膜表面的磁化的磁化固定层作为存储在存储层中的信息的基础; 以及设置在所述存储层和所述磁化固定层之间的由非磁性材料制成的中间层，其中所述存储层的至少周边通过所述层结构中的非磁性材料用磁性材料覆盖。

公开(公告)号：US20140374752A1

公开(公告)日：2014-12-25

申请号：US14478642

申请日：2014-09-05

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Kazutaka Yamane

IPC: H01L43/10 ,  H01L27/22

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/226 ,  H01L43/08

Abstract: A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.

Abstract translation: 存储元件包括具有垂直于其膜表面的磁化并且通过磁性物质的磁化状态保持信息的存储层，具有垂直于其膜表面的磁化的磁化固定层，其被用作存储在其中的信息的基础 所述存储层，设置在所述存储层和所述磁化被钉扎层之间的非磁性物质的中间层，以及在与所述中间层相对的一侧设置在所述存储层附近并且包括至少两个氧化物层的盖层 。 存储元件被配置为通过使用由包括存储层，中间层和磁化固定层的层结构的层叠方向通过的电流产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。

公开(公告)号：US20140001587A1

公开(公告)日：2014-01-02

申请号：US14017779

申请日：2013-09-04

Applicant: Sony Corporation

Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

IPC: H01L43/10

CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

公开(公告)号：US20130302913A1

公开(公告)日：2013-11-14

申请号：US13922752

申请日：2013-06-20

Applicant: Sony Corporation

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

IPC: H01L43/12

CPC classification number: H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/307 ,  H01L43/08

Abstract: A method of manufacturing a storage element by forming a magnetic layer; and forming a tunnel barrier layer on the magnetic layer, wherein, n the forming a tunnel barrier layer, the tunnel barrier layer is formed to a predetermined thickness in at least two steps in a divided manner.

Abstract translation: 一种通过形成磁性层来制造存储元件的方法; 以及在所述磁性层上形成隧道阻挡层，其中，在形成隧道势垒层时，所述隧道势垒层以分开的方式至少在两个步骤中形成为预定厚度。

公开(公告)号：US20130163317A1

公开(公告)日：2013-06-27

申请号：US13680669

申请日：2012-11-19

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: G11C11/161 ,  G11C7/04

Abstract: There is provided a memory element having a layered structure, including a memory layer having magnetization perpendicular to a film face in which a magnetization direction is changed corresponding to information, and including a Co—Fe—B magnetic layer and at least on non-magnetic layer; the magnetization direction being changed by flowing a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to the film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, further including a laminated structure where an oxide layer, the Co—Fe—B magnetic layer and the non-magnetic layer are laminated is formed.

Abstract translation: 提供了一种具有分层结构的存储元件，包括具有垂直于膜面的磁化的存储层，其中磁化方向根据信息而改变，并且包括Co-Fe-B磁性层和至少在非磁性 层; 通过使分层结构的叠层方向上的电流流动来改变磁化方向，以将信息记录在存储层中，具有垂直于胶片面的磁化的磁化固定层成为存储在存储层中的信息的基础 以及由非磁性材料形成并设置在所述存储层和所述磁化固定层之间的中间层，还包括其中氧化物层，所述Co-Fe-B磁性层和所述非磁性固定层的层叠结构， 形成磁性层。

公开(公告)号：US20130163315A1

公开(公告)日：2013-06-27

申请号：US13675416

申请日：2012-11-13

Applicant: Sony Corporation

Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

IPC: G11C11/16

CPC classification number: G11C11/161

Abstract: A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer. The non-magnetic layer includes Cr. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer.

Abstract translation: 存储元件包括分层结构。 分层结构包括存储层，磁化固定层和中间层。 存储层具有垂直于膜面的磁化，其中磁化方向根据信息而改变，并且通过在分层结构的层叠方向施加电流来改变磁化方向，以将信息记录在存储器中 层。 磁化固定层具有垂直于成为存储在存储层中的信息的基底的膜面的磁化，并且具有包括至少两个铁磁层和非磁性层的叠层铁钉结构。 非磁性层包括Cr。 中间层由非磁性材料形成，并且设置在存储层和磁化固定层之间。

公开(公告)号：US11276729B2

公开(公告)日：2022-03-15

申请号：US16078759

申请日：2016-12-01

Applicant: SONY CORPORATION

Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo

IPC: H01L27/22 ,  H01L43/08 ,  G01R33/09 ,  H01F10/32 ,  G11B5/39 ,  H01L43/10 ,  G11C11/16

Abstract: A magnetoresistive element includes: a first laminated structure body having a first surface and a second surface 20B facing the first surface; and a second laminated structure body formed by laminating a storage layer, an intermediate layer, and a magnetization fixed layer, the second laminated structure body having a first surface and a second surface facing the first surface, the first surface being positioned facing the second surface of the first laminated structure body. The first laminated structure body has a laminated structure including, from the first surface side of the first laminated structure body, a first layer made of a metal nitride and a second layer made of ruthenium or a ruthenium compound.