公开(公告)号：US11842991B2

公开(公告)日：2023-12-12

申请号：US16990887

申请日：2020-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  OhHan Kim ,  HeeSoo Lee ,  HunTeak Lee ,  InSang Yoon ,  Il Kwon Shim

IPC: H01L25/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/16 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/50

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L21/561 ,  H01L23/552 ,  H01L24/17 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/16 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5385 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/1146 ,  H01L2224/11334 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/48091 ,  H01L2224/48179 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/97 ,  H01L2224/81

Abstract: A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

公开(公告)号：US11367690B2

公开(公告)日：2022-06-21

申请号：US16880173

申请日：2020-05-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683 ,  H01L25/16 ,  H01L23/498

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

公开(公告)号：US10937741B2

公开(公告)日：2021-03-02

申请号：US16193691

申请日：2018-11-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US20200373289A1

公开(公告)日：2020-11-26

申请号：US16990887

申请日：2020-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  OhHan Kim ,  HeeSoo Lee ,  HunTeak Lee ,  InSang Yoon ,  Il Kwon Shim

IPC: H01L25/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/16

Abstract: A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

公开(公告)号：US20200286835A1

公开(公告)日：2020-09-10

申请号：US16880173

申请日：2020-05-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

公开(公告)号：US10700011B2

公开(公告)日：2020-06-30

申请号：US15807833

申请日：2017-11-09

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L25/16 ,  H01L23/498

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

公开(公告)号：US20200006295A1

公开(公告)日：2020-01-02

申请号：US16570165

申请日：2019-09-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  SungSoo Kim ,  HeeSoo Lee

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L23/538

Abstract: A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

公开(公告)号：US10468384B2

公开(公告)日：2019-11-05

申请号：US15706584

申请日：2017-09-15

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  SungSoo Kim ,  HeeSoo Lee

IPC: H01L23/02 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L25/10 ,  H01L25/16

Abstract: A semiconductor device has a first substrate. A first semiconductor component is disposed on a first surface of the first substrate. A second substrate includes a vertical interconnect structure on a first surface of the second substrate. A second semiconductor component is disposed on the first surface of the second substrate. The first semiconductor component or second semiconductor component is a semiconductor package. The first substrate is disposed over the second substrate with the first semiconductor component and second semiconductor component between the first substrate and second substrate. A first encapsulant is deposited between the first substrate and second substrate. A SiP submodule is disposed over the first substrate or second substrate opposite the encapsulant. A shielding layer is formed over the SiP submodule.

公开(公告)号：US20190074267A1

公开(公告)日：2019-03-07

申请号：US15697298

申请日：2017-09-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L25/10 ,  H01L25/00 ,  H01L23/31 ,  H01L23/538 ,  H01L23/552 ,  H01L21/56 ,  H01L21/48 ,  H01L23/00

Abstract: A semiconductor device has a first substrate and a semiconductor die disposed over the first substrate. A conductive pillar is formed on the first substrate. A first encapsulant is deposited over the first substrate and semiconductor die after forming the conductive pillar. A groove is formed in the first encapsulant around the conductive pillar. A first passive device is disposed over a second substrate. A second encapsulant is deposited over the first passive device and second substrate. The first substrate is mounted over the second substrate. A shielding layer is formed over the second encapsulant. A second passive device can be mounted over the second substrate opposite the first passive device and outside a footprint of the first substrate.

公开(公告)号：US20180261569A1

公开(公告)日：2018-09-13

申请号：US15976455

申请日：2018-05-10

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  OhHan Kim ,  HeeSoo Lee ,  HunTeak Lee ,  InSang Yoon ,  Il Kwon Shim

IPC: H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L25/065 ,  H01L23/498 ,  H01L23/552

Abstract: A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.