公开(公告)号：US12080826B2

公开(公告)日：2024-09-03

申请号：US17171451

申请日：2021-02-09

Applicant: Samsung Display Co., LTD.

Inventor： Joon Seok Park ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Geun Chul Park ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L33/12 ,  H01L27/15 ,  H01L33/00 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L33/12 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/56 ,  H01L33/62

Abstract: A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.

公开(公告)号：US11894393B2

公开(公告)日：2024-02-06

申请号：US17232211

申请日：2021-04-16

Applicant: Samsung Display Co., LTD. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

Inventor： Hye Lim Choi ,  Saeroonter Oh ,  Kihwan Kim ,  Joon Seok Park ,  Ji Hwan Lee ,  Jun Hyung Lim

IPC: H01L27/14 ,  H01L27/12 ,  H01L29/423 ,  H01L27/15 ,  H01L29/786 ,  H10K59/12

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/15 ,  H01L29/42384 ,  H01L29/78633 ,  H10K59/12

Abstract: An embodiment of the present invention provides a display device including a substrate and a transistor on the substrate. The transistor includes: a lower layer having conductivity and including a body portion and a plurality of protrusions; an oxide semiconductor layer including a channel region, a first conductive region disposed at a first side of the channel region, and a second conductive region disposed at a second side of the channel region, where the second side is opposite the first side; a gate electrode overlapping the channel region in a plan view; a first electrode electrically connected to the first conductive region; and a second electrode electrically connected to the second conductive region. The plurality of protrusions protrudes from the body portion, and the body portion overlaps the channel region in the plan view.

公开(公告)号：US11764231B2

公开(公告)日：2023-09-19

申请号：US17367198

申请日：2021-07-02

Applicant: Samsung Display Co., Ltd. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

Inventor： Joon Seok Park ,  Sae Roon Ter Oh ,  Jun Hyung Lim ,  Su Hyun Kim ,  Young Joon Choi

IPC: H01L27/00 ,  H01L27/12

CPC classification number: H01L27/1262 ,  H01L27/124 ,  H01L27/1225

Abstract: A display device includes: a substrate; a light blocking layer of a driving transistor and an active layer of a switching transistor on the substrate; a buffer layer on the light blocking layer, the buffer layer overlapping the light blocking layer; an active layer of the driving transistor on the buffer layer; a first gate insulating layer on the active layer of the driving transistor and the active layer of the switching transistor; and a first gate electrode on the first gate insulating layer and overlapping the active layer of the driving transistor and a second gate electrode overlapping the active layer of the switching transistor, wherein the light blocking layer and the active layer of the switching transistor are on a same layer.

公开(公告)号：US11581517B2

公开(公告)日：2023-02-14

申请号：US16837540

申请日：2020-04-01

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Seok Park ,  Yeon Keon Moon ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chul Park ,  Sang Woo Sohn ,  Jun Hyung Lim ,  Kyung Jin Jeon ,  Hye Lim Choi

IPC: H01L51/56 ,  G09G3/3266 ,  G09G3/3291 ,  H01L29/786 ,  H01L29/49 ,  G09G3/325

Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.

公开(公告)号：US11417282B2

公开(公告)日：2022-08-16

申请号：US16782973

申请日：2020-02-05

Applicant: Samsung Display Co., Ltd. ,  IUCF-HYU (Industry-University Cooperation Foundation Hanyang University)

Inventor： Joon Seok Park ,  Jun Hyung Lim ,  Jin Seong Park ,  Jiazhen Sheng ,  Tae Hyun Hong

IPC: H01L21/00 ,  G09G3/3291 ,  G09G3/3266 ,  H01L27/32 ,  H01L51/56 ,  H01L29/786 ,  H01L27/12

Abstract: A display device and a method of manufacturing the display device are provided. The display device comprises a pixel which is connected to a scan line and a data line intersecting the scan line, wherein the pixel comprises a light emitting element and a driving transistor controlling a driving current, which is supplied to the light emitting element, according to a data voltage received from the data line, wherein the driving transistor comprises a first active layer having an oxide semiconductor containing tin (Sn).

公开(公告)号：US11335273B2

公开(公告)日：2022-05-17

申请号：US16849575

申请日：2020-04-15

Applicant: Samsung Display Co., LTD.

Inventor： Hye Lim Choi ,  Yeon Keon Moon ,  Joon Seok Park ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Hyung Jun Kim ,  Geun Chui Park ,  Kyung Jin Jeon

IPC: G09G3/32 ,  G09G3/3291 ,  H01L27/32 ,  G09G3/3266

Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light emitting element and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from a respective data line of the data lines, the first transistor includes a first active layer including an oxide semiconductor containing indium (In), and a content of the indium in the oxide semiconductor of the first active layer is 70 at % or more.

公开(公告)号：US11195861B2

公开(公告)日：2021-12-07

申请号：US16818310

申请日：2020-03-13

Applicant: Samsung Display Co., LTD.

Inventor： Geun Chul Park ,  Joon Seok Park ,  Tae Sang Kim ,  Yeon Keon Moon ,  Jun Hyung Lim ,  Kyung Jin Jeon

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/12

Abstract: A display device and a method of manufacturing the same. The display device includes a pixel connected to a scan line and a data line intersecting the scan line, and a driving transistor and a switching transistor disposed in the pixel. The driving transistor includes a substrate, a first active layer disposed on the substrate, a first gate electrode disposed on the first active layer, and a second insulating film contacting the first gate electrode and the first gate electrode. The switching transistor includes a second active layer disposed on the substrate, a second gate electrode disposed on the second active layer, a first insulating film contacting the second active layer and the second gate electrode, and a second insulating film covering the first insulating film. The first insulating film and the second insulating film are made of different materials from each other.

公开(公告)号：US10985281B2

公开(公告)日：2021-04-20

申请号：US16752126

申请日：2020-01-24

Applicant: Samsung Display Co., Ltd.

Inventor： Ji Hun Lim ,  Joon Seok Park ,  Jay Bum Kim ,  Jun Hyung Lim ,  Kyoung Seok Son

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/423

Abstract: A transistor may include a semiconductor, a source electrode, a drain electrode, and a gate electrode. The semiconductor may include a first doped region, a second doped region, a source region, a drain region, and a channel region. The channel region is positioned between the source region and the drain region. The first doped region is positioned between the channel region and the source region. The second doped region is positioned between the channel region and the drain region. A doping concentration of the first doped region is lower than a doping concentration of the source region. A doping concentration of the second doped region is lower than a doping concentration of the drain region. The source electrode is electrically connected to the source region. The drain electrode is electrically connected to the drain region. The gate electrode overlaps the channel region.

公开(公告)号：US10396101B2

公开(公告)日：2019-08-27

申请号：US16241247

申请日：2019-01-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji Hun Lim ,  Joon Seok Park

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.

公开(公告)号：US20190139992A1

公开(公告)日：2019-05-09

申请号：US16241247

申请日：2019-01-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： JI HUN LIM ,  Joon Seok Park

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor member including a channel region overlapping the gate electrode with the gate insulating layer interposed therebetween, and a source region and a drain region that face each other with the channel region interposed therebetween; an interlayer insulating layer on the semiconductor member; a data conductor on the interlayer insulating layer; and a passivation layer on the data conductor, wherein the interlayer insulating layer has a first hole on the channel region.