DISPLAY DEVICE
    21.
    发明申请

    公开(公告)号:US20210336108A1

    公开(公告)日:2021-10-28

    申请号:US17196358

    申请日:2021-03-09

    Abstract: A display device includes a first electrode disposed on a substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, at least one light-emitting element extending in a direction, disposed between the first electrode and the second electrode, and electrically connected to the first electrode and the second electrode, and an insulating pattern layer disposed on the first electrode and the second electrode, the insulating pattern layer including a fixer disposed on at least part of the at least one light-emitting element, and a barrier surrounding the at least one light-emitting element.

    DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210384178A1

    公开(公告)日:2021-12-09

    申请号:US17203496

    申请日:2021-03-16

    Abstract: A display device and a method of fabricating a display device are provided. The display device includes a substrate comprising a contact area and a line area, a first electrode that extends in a first direction on the substrate, a first electrode pattern that extends in the first direction and is spaced apart from the first electrode on the substrate, a second electrode that extends in the first direction and is between the first electrode and the first electrode pattern on the substrate, a second electrode pattern that extends in the first direction and is between the first electrode and the second electrode on the substrate, and a first light-emitting element between the first electrode and the second electrode pattern in the contact area.

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20190096925A1

    公开(公告)日:2019-03-28

    申请号:US16036985

    申请日:2018-07-17

    Abstract: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

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