THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    21.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20140175424A1

    公开(公告)日:2014-06-26

    申请号:US13915342

    申请日:2013-06-11

    Abstract: A thin film transistor array panel includes: a substrate, a gate line positioned on the substrate and including a gate electrode, a semiconductor layer positioned on the substrate and including an oxide semiconductor, a data wire layer positioned on the substrate and including a data line crossing the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode, and a capping layer covering the data wire layer, in which an end of the capping layer is inwardly recessed as compared to an end of the data wire layer.

    Abstract translation: 薄膜晶体管阵列面板包括:衬底,位于衬底上并包括栅电极的栅极线,位于衬底上并包括氧化物半导体的半导体层,位于衬底上的数据线层,包括数据线 穿过栅极线,连接到数据线的源电极和面对源电极的漏电极和覆盖数据线层的覆盖层,其中封盖层的端部向内凹入,与顶端 数据线层。

    LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF
    22.
    发明申请
    LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF 有权
    液晶显示及其制造方法

    公开(公告)号:US20140139795A1

    公开(公告)日:2014-05-22

    申请号:US13938106

    申请日:2013-07-09

    CPC classification number: G02F1/1341 G02F1/133345

    Abstract: A liquid crystal display is provided. The liquid crystal display includes a substrate, a thin film transistor disposed on the substrate, a pixel electrode connected with a terminal of the thin film transistor, a microcavity disposed on the pixel electrode, the microcavity including a liquid crystal injection hole disposed at an edge of the microcavity, a supporting member disposed on the microcavity, a first hydrophobic layer disposed on an edge portion of the supporting member, and a capping layer disposed on the supporting member with the capping layer covering the liquid crystal injection hole.

    Abstract translation: 提供液晶显示器。 液晶显示器包括基板,设置在基板上的薄膜晶体管,与薄膜晶体管的端子连接的像素电极,设置在像素电极上的微腔,微腔包括设置在边缘的液晶注入孔 设置在所述微腔上的支撑构件,设置在所述支撑构件的边缘部分上的第一疏水层和设置在所述支撑构件上的覆盖层,所述覆盖层覆盖所述液晶注入孔。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230027414A1

    公开(公告)日:2023-01-26

    申请号:US17870372

    申请日:2022-07-21

    Abstract: A display device includes a substrate with a display area and a non-display area adjacent to the display area, a transistor disposed in the display area of the substrate and on the substrate, a reflective electrode disposed on the transistor and electrically connected to the transistor, the reflective electrode including molybdenum (Mo), an insulating film disposed on the reflective electrode and including at least one thin film layer, the at least one thin film layer including a first thin film including a material having a refractive index of about 2.0 or more, and a second thin film disposed on the first thin film and including a material having a refractive index of about 1.8 or less, a contact electrode disposed on the insulating film and electrically connected to the reflective electrode and a light emitting diode disposed on the insulating film and electrically connected to the contact electrode.

    WIRING SUBSTRATE AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20220406817A1

    公开(公告)日:2022-12-22

    申请号:US17672249

    申请日:2022-02-15

    Abstract: A display device includes conductive layers including wires and conductive patterns in a display area and a pad area, a via layer on the conductive layers, a first electrode and a second electrode on the via layer in the display area and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, light emitting elements on the first electrode and the second electrode spaced apart from each other on the first insulating layer, and a first connection electrode on the first electrode and electrically contacting the light emitting elements, and a second connection electrode on the second electrode and electrically contacting the light emitting elements, each of the conductive layers includes a first metal layer and a second metal layer on the first metal layer, and the second metal layer contains copper and has a grain size of about 155 nm or less.

    LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190172819A1

    公开(公告)日:2019-06-06

    申请号:US16027960

    申请日:2018-07-05

    Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

    DISPLAY DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRODE FORMING METHOD

    公开(公告)号:US20190081088A1

    公开(公告)日:2019-03-14

    申请号:US16124356

    申请日:2018-09-07

    Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.

    WIRE GRID POLARIZER AND METHOD OF FABRICATING THE SAME
    29.
    发明申请
    WIRE GRID POLARIZER AND METHOD OF FABRICATING THE SAME 审中-公开
    电网极化器及其制造方法

    公开(公告)号:US20160033701A1

    公开(公告)日:2016-02-04

    申请号:US14566140

    申请日:2014-12-10

    CPC classification number: G02B5/3058

    Abstract: According an embodiment, a wire grid polarizer comprising a substrate, a plurality of conductive wire patterns that are formed on the substrate in a parallel arrangement, a first hard mask and a second hard mask disposed on the conductive wire patterns, and a protective layer formed on the first hard mask and the second hard mask, wherein a ratio of a vertical cross-sectional width of the first hard mask to a vertical cross-sectional width of the second hard mask is 1 or less is provided.

    Abstract translation: 根据一个实施例,一种线栅偏振器,包括基板,以平行布置形成在基板上的多个导线图案,设置在导线图案上的第一硬掩模和第二硬掩模,以及形成的保护层 在第一硬掩模和第二硬掩模上,其中第一硬掩模的垂直横截面宽度与第二硬掩模的垂直横截面宽度的比率为1或更小。

Patent Agency Ranking