公开(公告)号：US20200252051A1

公开(公告)日：2020-08-06

申请号：US16388979

申请日：2019-04-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Won HAN ,  Tae Yoon KIM ,  Sang Uk SON ,  Chang Hyun LIM

IPC: H03H9/54 ,  H03H9/02 ,  H03H9/205

Abstract: A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.

公开(公告)号：US20200087141A1

公开(公告)日：2020-03-19

申请号：US16357588

申请日：2019-03-19

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Kwang Su KIM ,  Tae Yoon KIM

IPC: B81B7/00 ,  B81B7/02 ,  B81C1/00

Abstract: A MEMS device includes a substrate, a MEMS element portion disposed on a surface of the substrate, a cap having a cavity formed to oppose the MEMS element portion, and a diffusion prevention layer formed on at least a portion of the cap, wherein at least one of the cap and the substrate includes a bonding layer disposed outside of the cavity, and wherein the cap includes a spreading prevention portion disposed between the bonding layer and the cavity and having a V-shape in cross-section.

公开(公告)号：US20180337656A1

公开(公告)日：2018-11-22

申请号：US15814869

申请日：2017-11-16

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Chang Hyun LIM ,  Tae Yoon KIM ,  Moon Chul LEE

IPC: H03H9/125 ,  H03H9/17

CPC classification number: H03H9/125 ,  H03H9/13 ,  H03H9/171 ,  H03H9/174 ,  H03H9/205

Abstract: A bulk acoustic wave resonator includes a substrate including a first via and a second via, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, and an upper electrode connection member spaced apart from the lower electrode connection member. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. The lower electrode connection member electrically connects the lower electrode to the first via and supports a first edge portion of the resonant portion. The upper electrode connection member electrically connects the upper electrode to the second via and supports a second edge portion of the resonant portion. Either one or both of the upper electrode connection member and the lower electrode connection member includes a respective extension portion connected to a respective one of the first via and the second via that is disposed below the resonant portion.

公开(公告)号：US20180309427A1

公开(公告)日：2018-10-25

申请号：US15797224

申请日：2017-10-30

Applicant: Samsung Electro-Mechanics Co., Ltd

Inventor： Tae Yoon KIM ,  Moon Chul LEE ,  Yoon Sok PARK

IPC: H03H9/10 ,  H03H3/02 ,  H03H9/17 ,  H03H9/02

CPC classification number: H03H9/1014 ,  H03H3/02 ,  H03H9/02047 ,  H03H9/02157 ,  H03H9/173

Abstract: A bulk acoustic wave resonator includes: support members disposed between air cavities; a resonant part including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed above the air cavities and on the support members; and a wiring electrode connected either one or both of the first electrode and the second electrode, and disposed above one of the air cavities, wherein a width of an upper surface of the support members is greater than a width of a lower surface of the support members, and side surfaces of the support members connecting the upper surface and the lower surface to each other are inclined.

公开(公告)号：US20180048287A1

公开(公告)日：2018-02-15

申请号：US15486806

申请日：2017-04-13

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Hwa Sun LEE ,  Hyun Min HWANG ,  Moon Chul LEE ,  Sung Sun KIM ,  Tae Yoon KIM

IPC: H03H9/17 ,  H01L41/18 ,  H01L41/047

CPC classification number: H03H9/177 ,  H01L41/0477 ,  H01L41/18 ,  H03H9/02118 ,  H03H9/171 ,  H03H9/173

Abstract: A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.

公开(公告)号：US20180019726A1

公开(公告)日：2018-01-18

申请号：US15638809

申请日：2017-06-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sung HAN ,  Jae Chang LEE ,  Won HAN ,  Tae Yoon KIM ,  Jong Woon KIM ,  Tae Kyung LEE ,  Moon Chul LEE ,  Tae Hun LEE ,  Sung Min CHO ,  In Young KANG

IPC: H03H9/10 ,  H03H9/02 ,  H03H9/17 ,  H03H9/54

CPC classification number: H03H9/1014 ,  H03H9/02086 ,  H03H9/02102 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/172 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic wave resonator device includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed over a portion of the lower electrode; an upper electrode disposed on the piezoelectric layer; and a shape control layer covering an edge of a cavity disposed between the substrate and the lower electrode, wherein tensile stress is applied to the shape control layer during formation of the shape control layer.

公开(公告)号：US20230072487A1

公开(公告)日：2023-03-09

申请号：US17676905

申请日：2022-02-22

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Won HAN ,  Hwa Sun LEE ,  Moon Chul LEE ,  Jeong Hoon RYOU ,  Tae Yoon KIM ,  Sang Kee YOON ,  Yong Suk KIM ,  Joung Hun KIM ,  Tae Kyung LEE ,  Jae Hyoung GIL

IPC: H03H9/02 ,  H03H3/04 ,  H03H9/17

Abstract: A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator includes a board; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode, and disposed on the board, and a temperature compensation layer disposed on the resonant portion, wherein the temperature compensation layer includes a temperature compensation portion formed of a dielectric and a loss compensation portion formed of a material different from a material of the temperature compensation portion, and wherein each of the temperature compensation portion and the loss compensation portion includes a plurality of linear patterns, and the linear patterns of the temperature compensation portion and the linear patterns of the loss compensation portion are alternately disposed.

公开(公告)号：US20200373899A1

公开(公告)日：2020-11-26

申请号：US16989129

申请日：2020-08-10

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jong Woon KIM ,  Moon Chul LEE

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31 ,  H03H3/02

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US20200169246A1

公开(公告)日：2020-05-28

申请号：US16435621

申请日：2019-06-10

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Yoon KIM ,  Tae Kyung LEE ,  Sang Kee YOON ,  Sung Jun LEE ,  Chang Hyun LIM ,  Nam Jung LEE ,  Tae Hun LEE ,  Moon Chul LEE

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02

Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

公开(公告)号：US20200091888A1

公开(公告)日：2020-03-19

申请号：US16356164

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Hun LEE ,  Tae Yoon KIM ,  Moon Chul LEE ,  Chang Hyun LIM ,  Nam Jung LEE ,  Il Han LEE

IPC: H03H9/02 ,  H03H9/17 ,  H03H3/02

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.