Abstract:
Provided are a polymer including a first repeating unit represented by Formula 1, a resist composition including the polymer, and a method of forming a pattern using the resist composition: wherein descriptions of L11 to L14, a11 to a13, A11, X11, R11, R12, b12 and p in Formula 1 are provided in the present specification.
Abstract:
A poly(amide-imide) copolymer including a reaction product of at least one tetracarboxylic acid dianhydride, at least one diamine, and at least one dicarboxylic acid derivative, wherein the at least one tetracarboxylic acid dianhydride includes a tetracarboxylic acid dianhydride represented by Chemical Formula 1, the at least one diamine includes a diamine represented by Chemical Formula 2, and the at least one dicarboxylic acid derivative includes a dicarboxylic acid derivative represented by Chemical Formula 3: wherein, R1 to R3, X1 and X2 are the same as defined in the specification.
Abstract:
A polyimide film, which is a reaction product of a diamine including an amide structural unit in an amount of greater than about 0 mol % and less than or equal to about 80 mol % and an aromatic dianhydride, wherein the polyimide film has a Martens hardness of about 14 N/mm2 to about 120 N/mm2 at a thickness of about 30 μm to about 100 μm.
Abstract:
A stacked transparent film includes a polymer film including at least one of an amide structural unit and an imide structural unit, wherein the polymer film has a refractive index of about 1.65 to about 1.75 at a 550 nanometer wavelength and an elastic modulus of greater than or equal to about 5.5 gigapascals; and at least one of a first coating layer on a first side of the polymer film and a second coating layer on a side opposite the first side of the polymer film.
Abstract:
A composition including a polyamideimide precursor modified with an alkoxysilane group and an oligosilica compound, wherein the oligosilica compound is a condensation reaction product of an organosilane diol and an alkoxysilane compound.
Abstract:
A window for a display device including a plastic substrate having yield strain of greater than or equal to about 0.8% at about 85 degrees Celsius and 85% relative humidity and a hard coating layer disposed on at least one side of the plastic substrate.
Abstract:
Provided are a photoreactive polymer compound including a first repeating unit represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition:
Abstract:
Provided are a resist composition and a pattern forming method using the same. The resist composition includes a polymer including a first repeating unit repeating unit Formula 1, a photoacid generator, and an organic solvent.
In Formula 1, L11 to L13, a11 to a13, A11 to A13, R11 to R14, b12 to b14, and p are the same as described in the detailed description.
Abstract:
Provided are a resist composition and a pattern forming method using the same. The resist composition may include an organometallic compound represented by Formula 1 below and a polymer repeating unit represented by Formula 2 below.
In Formulas 1 and 2, descriptions of M11, R11, R12, n, A21, L21 to L24, a21 to a24, R21, R22, b22, p, and X21 refer to the specification.
Abstract:
Provided are a polymer, a resist composition including the same, and a method of forming a pattern using the resist composition, the polymer including one or more of a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2, and free of a repeating unit of which a structure changes by an acid:
In Formulae 1 and 2, R11 to R16, b12, X−, R21 to R24, b22, and Y are as described in the specification.