公开(公告)号：US09385134B2

公开(公告)日：2016-07-05

申请号：US14340710

申请日：2014-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Ho Min ,  Ki-Jeong Kim ,  Kyoung-Sub Shin ,  Dong-Hyun Kim

IPC: H01L23/52 ,  H01L23/48 ,  H01L27/115 ,  H01L27/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L27/32

CPC classification number: H01L27/11517 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139 ,  H01L27/0203 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/3276

Abstract: In a semiconductor device, parallel first and second conductive lines having a unit width extend from a memory cell region into a connection region. A trim region in the connection region includes pads respectively connected to the first and second conductive lines but are separated by a width much greater than the unit width.

Abstract translation: 在半导体器件中，具有单位宽度的并行的第一和第二导线从存储单元区域延伸到连接区域。 连接区域中的修剪区域包括分别连接到第一和第二导电线但是被分开的宽度远大于单位宽度的焊盘。

公开(公告)号：US20150044829A1

公开(公告)日：2015-02-12

申请号：US14454943

申请日：2014-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Un Kim ,  Hyun-Seung Song ,  Dong-Hyun Kim

IPC: H01L29/78 ,  H01L21/8238 ,  H01L21/266

CPC classification number: H01L29/7851 ,  H01L21/266 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/66803

Abstract: Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region.

Abstract translation: 提供制造半导体器件的方法包括提供具有第一区域和第二区域的衬底，所述衬底限定第一和第二区域中的沟槽; 在所述第一和第二区域上形成活动翅片，所述活动翅片从所述第一和第二区域中的沟槽突出; 在所述第一和第二区域中的活动翅片的侧壁上形成间隔物; 在间隔物下方的沟槽的凹陷地板，以提供活动鳍片的延伸; 将第一类型的杂质植入第一区域中活性鳍片的延伸部分; 以及将第二类型的不同于第一类型的杂质植入第二区域中的活性鳍片的延伸部分。

公开(公告)号：US10602076B2

公开(公告)日：2020-03-24

申请号：US15748307

申请日：2016-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-Yong Lee ,  Dong-Hyun Kim ,  Dong-Hoon Kim ,  Sang-Ho Noh ,  Kyung-Yul Seo ,  Jong-Hun Won

IPC: H04N5/262 ,  H04N5/232 ,  H04N21/2387 ,  H04N5/265 ,  H04N5/77 ,  G11B27/28 ,  G11B27/031

Abstract: According to various examples, a method for providing, in an electronic device, an image can comprise the steps of: obtaining a first image of a subject by using a camera functionally connected to the electronic device; generating at least one image comprising a second image to be related to the first image; and concurrently displaying the first image on a first region of a display functionally connected to the electronic device, and the second image on a second region of the display.

公开(公告)号：US10040198B2

公开(公告)日：2018-08-07

申请号：US14876612

申请日：2015-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung-Whan Oh ,  Sung-Chul Go ,  Eun-Kyung Hong ,  Dong-Hyun Kim ,  Jin-Ha Choi

IPC: H01L21/67 ,  B25J9/02 ,  B25J9/16 ,  G01C21/20

Abstract: A method of processing measurement information in which a determined parameter value is determined at each of a plurality of measurement times including determining a predicted parameter value at each of the measurement times, determining an error range at each of the measurement times based on the predicted parameter value, obtaining a measured parameter value at each of the measurement times, and determining the determined parameter value based on the predicted parameter value, the measured parameter value, and the error range.

公开(公告)号：US09798568B2

公开(公告)日：2017-10-24

申请号：US14962292

申请日：2015-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyun Kim ,  Yong-Gil Han ,  Soon-Sang Park

IPC: G06F9/455 ,  H04L29/08 ,  G06F13/10 ,  G06F9/44 ,  G06F9/50

CPC classification number: G06F9/45558 ,  G06F9/4411 ,  G06F9/5061 ,  G06F13/102 ,  G06F13/105 ,  G06F2009/45579 ,  H04L67/125 ,  H04L67/16 ,  H04L67/34

Abstract: A method of sharing a resource using a virtual device driver and an electronic device thereof are provided. The method includes generating a virtual device driver, which corresponds to a real device driver of a host electronic device, in the client electronic device, receiving a resource from the host electronic device by using the virtual device driver through a first communication mechanism designated in the host electronic device, and after the first communication mechanism is changed to a second communication mechanism designated in the host electronic device, receiving the resource from the host electronic device by using the virtual device driver.

公开(公告)号：US09184293B2

公开(公告)日：2015-11-10

申请号：US14454943

申请日：2014-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Un Kim ,  Hyun-Seung Song ,  Dong-Hyun Kim

IPC: H01L27/20 ,  H01L29/78 ,  H01L21/266 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/7851 ,  H01L21/266 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/0921 ,  H01L27/0924 ,  H01L29/66803

Abstract: Methods of fabricating semiconductor devices are provided including providing a substrate having a first region and a second region, the substrate defining trenches in the first and second regions; forming active fins on the first and second regions, the active fins protruding from the trenches in the first and second regions; forming spacers on sidewalls of the active fins in the first and second regions; recessing floors of the trenches under the spacers to provide extensions of the active fins; implanting impurities of a first type in the extensions of the active fins in the first region; and implanting impurities of a second, type, different from the first type, in the extensions of the active fins in the second region.

Abstract translation: 提供制造半导体器件的方法包括提供具有第一区域和第二区域的衬底，所述衬底限定第一和第二区域中的沟槽; 在所述第一和第二区域上形成活动翅片，所述活动翅片从所述第一和第二区域中的沟槽突出; 在所述第一和第二区域中的活动翅片的侧壁上形成间隔物; 在间隔物下方的沟槽的凹陷地板，以提供活动鳍片的延伸; 将第一类型的杂质植入第一区域中活性鳍片的延伸部分; 以及将第二类型的不同于第一类型的杂质植入第二区域中的活性鳍片的延伸部分。