公开(公告)号：US09963632B2

公开(公告)日：2018-05-08

申请号：US14308506

申请日：2014-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haeng Deog Koh ,  Hyun A Kang ,  Eun Joo Jang ,  Na Youn Won

IPC: C09K11/02 ,  C09K11/08 ,  H01L33/50 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/02 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/70 ,  Y10S977/774 ,  Y10S977/83 ,  Y10S977/896 ,  Y10S977/90 ,  Y10S977/952

Abstract: A quantum dot-resin nanocomposite including a nanoparticle including a curable resin and a plurality of quantum dots contacting the nanoparticle. Also, a method of preparing the nanocomposite, and a molded article including the nanocomposite.

公开(公告)号：US09904109B2

公开(公告)日：2018-02-27

申请号：US15206718

申请日：2016-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Han ,  Nayoun Won ,  Hyun A Kang ,  Ha Il Kwon ,  Shang Hyeun Park ,  Eun Joo Jang ,  Shin Ae Jun ,  Deukseok Chung ,  Tae Won Jeong

IPC: G02B5/20 ,  G02F1/1335 ,  G03F7/00

CPC classification number: G02F1/133617 ,  G02B5/201 ,  G02B5/207 ,  G02F1/133504 ,  G02F1/133514 ,  G02F1/133615 ,  G02F1/133621 ,  G02F2001/133614 ,  G02F2202/36 ,  G03F7/0007

Abstract: A color filter including a first region configured to emit a first light, a second region configured to emit a second light having a longer wavelength than a wavelength of the first light, a third region configured to emit a third light having a longer wavelength than the wavelength of the second light, a first layer including two or more quantum dots, and a second layer formed on at least one surface of the first layer, wherein the first layer and the second layer are disposed in at least the second region and the third region.

公开(公告)号：US09701901B2

公开(公告)日：2017-07-11

申请号：US15184011

申请日：2016-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun A Kang ,  Eun Joo Jang ,  Young Hwan Kim ,  Shin Ae Jun ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/70 ,  H01L33/56 ,  C08L81/02 ,  C08G75/045 ,  H01L33/50 ,  C09K11/02 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  C08G75/045 ,  C08G75/12 ,  C08L81/02 ,  C09K11/02 ,  C09K11/703 ,  H01L33/501 ,  H01L33/502 ,  H01L33/56 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/005

Abstract: A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1: a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2: wherein in Chemical Formulae 1 and 2 groups R2, Ra to Rd, Ya to Yd, L1′ and L2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal being different from the second semiconductor nanocrystal.

公开(公告)号：US09181471B2

公开(公告)日：2015-11-10

申请号：US14059594

申请日：2013-10-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun A Kang ,  Oul Cho ,  Eun Joo Jang ,  Hyo Sook Jang ,  Shin Ae Jun ,  Soo Kyung Kwon ,  Won Joo Lee

IPC: H01J1/62 ,  C09K11/02 ,  C09K11/88 ,  H01L33/50

CPC classification number: C09K11/02 ,  C09K11/883 ,  H01L33/501 ,  H01L33/502 ,  H01L2224/48091 ,  Y02B20/181 ,  H01L2924/00014

Abstract: A light emitting device including: a blue light source; a phosphor; and a semiconductor nanocrystal, and emits white light having a R1-R8 average color rendering index (“CRI”) of greater than or equal to about 90, and a R9 red color rendering index (R9) of greater than or equal to about 90.

Abstract translation: 一种发光器件，包括：蓝色光源; 磷光体 和半导体纳米晶体，并且发射具有大于或等于约90的R1-R8平均显色指数（“CRI”）的白光和大于或等于约90的R9红色显色指数（R9） 。

公开(公告)号：US11767472B2

公开(公告)日：2023-09-26

申请号：US17709830

申请日：2022-03-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Eun Joo Jang ,  Hyun A Kang ,  Tae Hyung Kim

IPC: C09K11/88 ,  C09K11/56 ,  C09K11/02 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/883 ,  C09K11/02 ,  C09K11/565 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115 ,  Y10S977/774 ,  Y10S977/824 ,  Y10S977/892 ,  Y10S977/95

Abstract: A semiconductor nanocrystal particle including zinc (Zn), tellurium (Te) and selenium (Se), a method of producing the same, and an electronic device including the same are disclosed. In the semiconductor nanocrystal particle, an amount of the tellurium is less than an amount of the selenium, the particle includes a core including a first semiconductor material including zinc, tellurium, and selenium and a shell disposed on at least a portion of the core and including a second semiconductor material having a different composition from the first semiconductor material, and the semiconductor nanocrystal particle emits blue light including a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

公开(公告)号：US11643597B2

公开(公告)日：2023-05-09

申请号：US17203872

申请日：2021-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Hyun A Kang ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/50 ,  C09K11/70 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C09K11/703 ,  H01L51/5056 ,  H01L51/5072 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/502 ,  H01L2251/303 ,  H01L2251/5369

Abstract: Disclosed are a semiconductor nanocrystal particle including indium (In), zinc (Zn), and phosphorus (P), wherein a mole ratio of the zinc relative to the indium is greater than or equal to about 25:1, and the semiconductor nanocrystal particle includes a core including a first semiconductor material including indium, zinc, and phosphorus and a shell disposed on the core and including a second semiconductor material including zinc and sulfur, a method of producing the same, and an electronic device including the same. The semiconductor nanocrystal particle emits blue light having a maximum peak emission at a wavelength of less than or equal to about 470 nanometers.

公开(公告)号：US11180694B2

公开(公告)日：2021-11-23

申请号：US16851625

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Yuho Won ,  Eun Joo Jang

IPC: C09K11/02 ,  C09K11/88 ,  C01B19/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01L51/50 ,  B82Y30/00

Abstract: A method of producing a quantum dot comprising zinc selenide, the method comprising: providing an organic ligand mixture comprising a carboxylic acid compound, a primary amine compound, a secondary amide compound represented by Chemical Formula 1, and a first organic solvent: RCONHR  Chemical Formula 1 wherein each R is as defined herein; heating the organic ligand mixture in an inert atmosphere at a first temperature to obtain a heated organic ligand mixture; adding a zinc precursor, a selenium precursor, and optionally a tellurium precursor to the heated organic ligand mixture to obtain a reaction mixture, wherein the zinc precursor does not comprise oxygen; and heating the reaction mixture at a first reaction temperature to synthesize a first semiconductor nanocrystal particle.

公开(公告)号：US11018311B2

公开(公告)日：2021-05-25

申请号：US16797380

申请日：2020-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young Chung ,  Eun Joo Jang ,  Oul Cho ,  Hyun A Kang ,  Tae Hyung Kim ,  Yun Sung Woo ,  Jeong Hee Lee

IPC: H01L51/50 ,  H01L51/52

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.

公开(公告)号：US10948770B2

公开(公告)日：2021-03-16

申请号：US15238127

申请日：2016-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Eun Joo Jang ,  Hyun A Kang ,  Yongwook Kim ,  Jihyun Min ,  Jeong Hee Lee ,  Shin Ae Jun ,  Oul Cho

IPC: G02F1/1335 ,  G02F1/13357 ,  F21V8/00 ,  H01L33/50 ,  B82Y20/00 ,  B82Y30/00

Abstract: A light source includes a light emitting element and a light conversion layer configured to convert light emitted from the light emitting element into white light; wherein the light conversion layer includes a matrix resin and a quantum dot, wherein the white light includes a red light component, a green light component, and a blue light component each having a color purity configured to display a color gamut having a concordance rate of greater than or equal to about 99.0% with an Adobe RGB color gamut of a display device, and wherein the green light component has a peak wavelength of about 525 nanometers to about 528 nanometers and a full width at half maximum of less than or equal to about 40 nanometers, and a red light component having a peak wavelength of about 625 nanometers to about 645 nanometers.

公开(公告)号：US10808169B2

公开(公告)日：2020-10-20

申请号：US15644984

申请日：2017-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Hee Lee ,  Hyun A Kang ,  Eun Joo Jang ,  Sang Eui Lee ,  Shin Ae Jun ,  Oul Cho ,  Tae Gon Kim ,  Tae Hyung Kim

IPC: C09K11/02 ,  G02F1/1335 ,  C09K11/59 ,  C01B17/20 ,  C08L33/04 ,  G02F1/361 ,  B24B1/00

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.