Semiconductor packages having a dam structure

    公开(公告)号:US11437293B2

    公开(公告)日:2022-09-06

    申请号:US16928159

    申请日:2020-07-14

    Abstract: A semiconductor package is disclosed. The disclosed semiconductor package includes a substrate having bonding pads at an upper surface thereof, a lower semiconductor chip, at least one upper semiconductor chip disposed on the lower semiconductor chip, and a dam structure having a closed loop shape surrounding the lower semiconductor chip. The dam structure includes narrow and wide dams disposed between the lower semiconductor chip and the bonding pads. The wide dam has a greater inner width than the narrow dam. The semiconductor packages further includes an underfill disposed inside the dam structure and being filled between the substrate and the lower semiconductor chip.

    Integrated circuit and storage device including integrated circuit

    公开(公告)号:US09897650B2

    公开(公告)日:2018-02-20

    申请号:US14957987

    申请日:2015-12-03

    CPC classification number: G01R31/31716 G01R31/2884 G01R31/3177

    Abstract: An integrated circuit including first pads and second pads, a first receiver circuit and a first driver circuit respectively connected to the first pad, a second receiver circuit and a second driver circuit respectively connected to the second pad, and a first loopback circuit having a first input terminal electrically connected to the first receiver circuit, a first output terminal electrically connected to the first driver circuit, a second output terminal electrically connected to the second driver circuit, and a second input terminal electrically connected to the second receiver circuit may be provided. At a normal mode, the first loopback circuit electrically connects the first input terminal to the second output terminal and electrically connects the second input terminal to the first output terminal. At a test mode, the first loopback circuit electrically connects the first input terminal to the first output terminal.

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