公开(公告)号：US12096639B2

公开(公告)日：2024-09-17

申请号：US17483156

申请日：2021-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ung Hwan Pi ,  Sung Chul Lee

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10B61/22 ,  G11C11/161 ,  H10N50/80 ,  G11C11/165 ,  H10N50/85

Abstract: A magnetic memory device includes a first magnetic memory cell extending in a first direction and including a first magnetic domain and a second magnetic domain arranged in the first direction, and a second magnetic memory cell extending in the first direction and including a third magnetic domain and a fourth magnetic domain arranged in the first direction. A magnetization direction of the first magnetic domain and a magnetization direction of the second magnetic domain are anti-parallel to each other. A magnetization direction of the third magnetic domain and a magnetization direction of the fourth magnetic domain are anti-parallel to each other. The third magnetic domain of the second magnetic memory cell is spaced apart from the second magnetic domain of the first magnetic memory cell in a second direction intersecting the first direction.

公开(公告)号：US12010925B2

公开(公告)日：2024-06-11

申请号：US18064367

申请日：2022-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ung Hwan Pi ,  Dongkyu Lee

IPC: H10N50/80 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/34 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.

公开(公告)号：US11935573B2

公开(公告)日：2024-03-19

申请号：US17735931

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Ung Hwan Pi

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: G11C11/161 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

公开(公告)号：US20230165164A1

公开(公告)日：2023-05-25

申请号：US18050600

申请日：2022-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Stuart Papworth Parkin ,  See-Hun Yang ,  Jiho Yoon ,  Ung Hwan Pi

IPC: H10N52/80 ,  H10B61/00 ,  H10N52/00

CPC classification number: H01L43/04 ,  H01L27/222 ,  H01L43/06

Abstract: A magnetic memory device includes a magnetic track extending in a first direction. The magnetic track includes a lower magnetic layer, an upper magnetic layer on the lower magnetic layer, a non-magnetic pattern on the lower magnetic layer and at a side of the upper magnetic layer, and a spacer layer between the lower magnetic layer and the upper magnetic layer and extending between the lower magnetic layer and the non-magnetic pattern. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer. The non-magnetic pattern has a first surface and a second surface which are opposite to each other in a second direction perpendicular to the first direction. A junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface perpendicular to the first surface and the second surface.

公开(公告)号：US11348626B2

公开(公告)日：2022-05-31

申请号：US16828429

申请日：2020-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Ung Hwan Pi

IPC: G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a second magnetic layer that extends on and parallel to the first magnetic layer, and a conductive layer extending between the first magnetic layer and the second magnetic layer. The first magnetic layer includes a first region having magnetic moments oriented in a first rotational direction along the first direction. The second magnetic layer includes a second region having magnetic moments oriented in a second rotational direction along the first direction. The second rotational direction is different from the first rotational direction.

公开(公告)号：US11170832B2

公开(公告)日：2021-11-09

申请号：US16552110

申请日：2019-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Woong Kim ,  Juhyun Kim ,  Se Chung Oh ,  Ung Hwan Pi

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02

Abstract: A magnetic memory device includes a first conductive line extending in a first direction on a substrate, a first magnetic pattern on the first conductive line, the first magnetic pattern including a first portion and a second portion that have different thicknesses, and a second conductive line on the first magnetic pattern and extending in a second direction intersecting the first direction.

公开(公告)号：US11121309B2

公开(公告)日：2021-09-14

申请号：US16901866

申请日：2020-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Kwang Seok Kim ,  Jangeun Lee ,  Ung Hwan Pi

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A magnetic memory device may include a perpendicular magnetic structure, an in-plane magnetic structure, a free magnetic pattern between the perpendicular magnetic structure and the in-plane magnetic structure, and a tunnel barrier pattern between the perpendicular magnetic structure and the free magnetic pattern. The perpendicular magnetic structure may include at least one pinned pattern which has a perpendicular magnetization direction that is pinned to a specific direction, and the free magnetic pattern may have a switchable perpendicular magnetization direction. The in-plane magnetic structure may include a first magnetic pattern and a second magnetic pattern, and each of the first and second magnetic patterns may have a different respective in-plane magnetization direction.

公开(公告)号：US20210098686A1

公开(公告)日：2021-04-01

申请号：US16893594

申请日：2020-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ung Hwan Pi ,  Dongkyu Lee

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01L43/12 ,  H01F10/32 ,  H01F41/34

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic line extending in a second direction intersecting the first direction on the conductive line, the magnetic line intersecting the conductive line, and a magnetic pattern disposed between the conductive line and the magnetic line. The magnetic pattern has first sidewalls opposite to each other in the first direction, and second sidewalls opposite to each other in the second direction. The second sidewalls of the magnetic pattern are aligned with sidewalls of the conductive line, respectively.

公开(公告)号：US20210028228A1

公开(公告)日：2021-01-28

申请号：US16794845

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Chul Lee ,  Eunsun Noh ,  Jeong-Heon Park ,  Ung Hwan Pi

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01F10/32

Abstract: A magnetic memory device includes a conductive line extending in a first direction, a bottom electrode provided on a portion of a bottom surface of the conductive line, a free layer and a pinned layer stacked on the conductive line, a spacer layer between the free layer and the pinned layer, and a top electrode provided on a portion of a top surface of the pinned layer. The conductive line, the free layer, the pinned layer and the spacer layer have side surfaces perpendicular to the first direction, and the side surfaces are aligned with each other.

公开(公告)号：US11805659B2

公开(公告)日：2023-10-31

申请号：US18171527

申请日：2023-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ung Hwan Pi ,  Dongkyu Lee

IPC: H10B61/00 ,  H01L23/528 ,  H01F10/32 ,  G11C11/16 ,  H10N50/80

CPC classification number: H10B61/00 ,  G11C11/161 ,  H01F10/329 ,  H01F10/3254 ,  H01L23/528 ,  H10N50/80

Abstract: Disclosed is a magnetic memory device including a first magnetic pattern that extends in a first direction and has a magnetization direction fixed in one direction, and a plurality of second magnetic patterns that extend across the first magnetic pattern. The second magnetic patterns extend in a second direction intersecting the first direction and are spaced apart from each other in the first direction. Each of the second magnetic patterns includes a plurality of magnetic domains that are spaced apart from each other in the second direction.