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21.
公开(公告)号:US11149234B2
公开(公告)日:2021-10-19
申请号:US16250069
申请日:2019-01-17
Applicant: Samsung Electronics Co., Ltd. , SEMES Co., Ltd.
Inventor: Mi Hyun Park , Jung-Min Oh , Young-Hoo Kim , Hyo San Lee , Tae Keun Kim , Ye Rim Yeon , Hae Rim Oh , Ji Soo Jeong , Min Hee Cho
IPC: B08B3/10 , C11D11/00 , H01L21/67 , H01L21/687 , H01L21/02 , C11D17/00 , C11D3/28 , C11D3/20 , C11D3/34 , C11D3/32 , C11D1/14 , C11D1/12 , C11D1/29
Abstract: A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.
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公开(公告)号:US10991600B2
公开(公告)日:2021-04-27
申请号:US15848481
申请日:2017-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yong-Jhin Cho , Young-Hoo Kim , Jihoon Jeong , Yungjun Kim , Jung-Min Oh , Kuntack Lee , Hyosan Lee
Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.
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公开(公告)号:US10576582B2
公开(公告)日:2020-03-03
申请号:US16029828
申请日:2018-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Young-Hoo Kim , Il-Sang Lee , Yong-sun Ko , Chang-Gil Ryu , Kun-Tack Lee , Hyo-San Lee
IPC: H01L21/00 , B23K26/146 , B08B7/00 , B08B3/10 , C11D11/00 , H01L21/67 , H01L21/687
Abstract: A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.
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公开(公告)号:US09852921B2
公开(公告)日:2017-12-26
申请号:US15175062
申请日:2016-06-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyoung Hwan Kim , Ingi Kim , Mihyun Park , Young-Hoo Kim , Ui-soon Park , Jung-Min Oh , Kuntack Lee , Hyosan Lee
IPC: G01N15/06 , G01N33/00 , G01N33/48 , H01L21/311 , H01L21/67
CPC classification number: H01L21/31111 , H01L21/67086 , H01L21/67253 , H01L21/67288
Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.
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