-
公开(公告)号：US11329219B2
公开(公告)日：2022-05-10
申请号：US16840741
申请日：2020-04-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jungmin Lee , Younghyun Kim , Junghwan Park , Sechung Oh , Kyungil Hong
Abstract: In a method of manufacturing a magnetoresistive random access memory, a memory structure may be formed on a substrate. The memory structure may include a lower electrode, a magnetic tunnel junction (MTJ) structure, and an upper electrode sequentially stacked. A protection layer including silicon nitride may be formed to cover a surface of the memory structure. The protection layer may be formed by a chemical vapor deposition process using plasma and introducing deposition gases including a silicon source gas, a nitrogen source gas containing no hydrogen and a dissociation gas. Damages of the MTJ structure may be decreased during forming the protection layer. Thus, the MRAM may have improved characteristics.
-
公开(公告)号：US10361361B2
公开(公告)日：2019-07-23
申请号：US15094064
申请日：2016-04-08
Inventor： Guohan Hu , Younghyun Kim , Daniel C. Worledge
Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.
-
公开(公告)号：US10230043B2
公开(公告)日：2019-03-12
申请号：US15465050
申请日：2017-03-21
Inventor： Guohan Hu , Younghyun Kim , Chandrasekara Kothandaraman , Jeong-Heon Park
Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a fixed magnetic layer, a tunnel barrier layer on the fixed magnetic layer, and a free magnetic layer formed on the tunnel barrier layer. A boron-segregating layer is formed directly on the free magnetic layer. The memory stack is etched into a pillar. A top electrode is formed over the pillar.
-
公开(公告)号：US12234596B2
公开(公告)日：2025-02-25
申请号：US18056865
申请日：2022-11-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyunam Lee , Youngjin Um , Younghyun Kim
IPC: D06F37/30 , D06F23/04 , D06F34/20 , D06F37/12 , D06F37/40 , H02K7/10 , H02K7/108 , H02K11/21 , D06F103/24
Abstract: A washing machine includes a water tank provided to store washing water in a cabinet, a rotating tub rotatably provided in the water tank, a pulsator provided in the rotating tub and rotated by a washing shaft, a driving motor configured to generate a rotational force for rotating the washing shaft, a clutch configured to selectively transmit the rotational force generated by the driving motor to a dewatering shaft for rotating the rotating tub and includes a housing through which the washing shaft and the dewatering shaft pass, a pulley including a first pulley rotated by the driving motor and a second pulley connected to the washing shaft, is connected to the first pulley by a belt, and configured to rotate the washing shaft, a bracket coupled to the second pulley and to which magnets are fixed, and a sensor unit coupled to the housing and configured to detect the number of rotations of the driving motor by detecting the magnets.
-
公开(公告)号：US11666276B2
公开(公告)日：2023-06-06
申请号：US16951083
申请日：2020-11-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Suho Lee , Younghyun Kim , Jeongmin Park , Seongmin Je , Shinhee Cho
IPC: A61B5/00 , H04B1/3827
CPC classification number: A61B5/681 , A61B5/0006 , H04B1/385 , G06F2218/12
Abstract: A wearable electronic device and method are disclosed, including: at least one sensor including a plurality of electrodes, at least one processor operatively connected with the at least one sensor, and a memory operatively connected with the at least one processor. The processor implements the method, including detecting coupling of the wearable electronic device with an external accessory contacting a body of a user, and based on detecting the coupling with the external accessory, measuring a biometric signal using a voltage received from at least two electrodes from among a plurality of measurement electrodes included in the external accessory.
-
Patent Agency Ranking
公开(公告)号：US11666275B2
公开(公告)日：2023-06-06
申请号：US16889309
申请日：2020-06-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Injo Jeong , Seongwook Jo , Hyunguk Yoo , Younghyun Kim , Suho Lee , Jeahyuck Lee , Jeehoon Lee , Hyunjun Jung , Shinhee Cho
CPC classification number: A61B5/681 , A61B5/02416 , A61B5/259 , A61B5/742 , A61B2560/04 , A61B2562/166
Abstract: An electronic device is provided. The electronic device includes a housing including a first surface facing a first direction, a second surface facing a second direction opposite to the first surface, and a third surface connecting the first surface and the second surface to form a space in the housing, a display viewable in the first direction through the first surface of the housing, a printed circuit board (PCB) disposed in the space, a glass covering at least a part of the second surface of the housing and including a fourth surface facing the first direction and a fifth surface facing the second direction, a high-hardness member disposed on the fifth surface, a first conductive member disposed between the high-hardness member and the glass, and a second conductive member disposed on the fourth surface and electrically connected to the PCB.
-
公开(公告)号：US20220130581A1
公开(公告)日：2022-04-28
申请号：US17350157
申请日：2021-06-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Younghyun Kim , Sechung Oh , Naoki Hase , Heeju Shin , Junghwan Park
Abstract: A magnetic device includes a fixed layer including a fixed pattern, a free layer, and a tunnel barrier between the fixed layer and the free layer. The fixed pattern includes a first magnetic pattern, a second magnetic pattern, and a hybrid spacer, including a nonmagnetic material layer, between the first magnetic pattern and the second magnetic pattern, the nonmagnetic material including a plurality of magnetic nanoparticles dispersed therein.
-
公开(公告)号：US20200344517A1
公开(公告)日：2020-10-29
申请号：US16961129
申请日：2018-12-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngin Park , Sungmin Lim , Sumin Kim , Younghyun Kim , Hanjin Park , Seockyoung Shim , Taehoon Lee , Changwon Choi
IPC: H04N21/431 , H04N21/475 , H04N21/41
Abstract: The present disclosure relates to an electronic device and a control method thereof. The electronic device according to the present disclosure comprises: a display; a communication unit; and a processor configured to receive information on an idle screen generated on the basis of category information on a plurality of contents selected by a user through the communication unit, and to control the display to display the idle screen on the basis of information on the received idle screen, wherein the idle screen includes a plurality of elements corresponding to a plurality of categories in which a plurality of contents are classified.
-
公开(公告)号：US10468455B2
公开(公告)日：2019-11-05
申请号：US15096864
申请日：2016-04-12
Inventor： Guohan Hu , Younghyun Kim , Jeong-Heon Park , Daniel Worledge
Abstract: Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.
-
公开(公告)号：US20170294482A1
公开(公告)日：2017-10-12
申请号：US15096864
申请日：2016-04-12
Inventor： Guohan Hu , Younghyun Kim , Jeong-Heon Park , Daniel Worledge
CPC classification number: H01L27/226 , G11C11/161 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Double magnetic tunnel junctions and methods of forming the same include a bottom reference layer having a first fixed magnetization and a first thickness. A first tunnel barrier is formed on the bottom reference layer. A free layer is formed on the first tunnel barrier and has a changeable magnetization. A second tunnel barrier is formed on the free layer. A top reference layer is formed on the second tunnel barrier and has a second fixed magnetization that is opposite to the first fixed magnetization and a second thickness that is significantly smaller than the first thickness.
-
-
-
-
-
-
-
-
-
Search Results
43
records
(took 0.02 seconds)
