Abstract:
A method and touch device for inputting a character are provided. The method includes displaying a first character when a touch interaction based on a user gesture is input to the certain character region; receiving a drawing interaction after the touch interaction while the touch interaction is maintained; displaying a first complete character generated by combining a second character according to the drawing interaction with the first character in a form of a preview; detecting a conversion interaction while the first completed character is displayed; displaying a second complete character generated by combining a third character according to the conversion interaction with the first character in the form of a preview; and processing the second complete character as a complete character when the user gesture is released while the second complete character is displayed.
Abstract:
A method for operating a menu screen in a user device is provided. The method includes activating a menu screen in response to a user's request; changing a state of an item of the menu screen according to a use log for each corresponding application when the menu screen is activated; and displaying the menu screen according to the state change of the item.
Abstract:
An example memory device includes a memory cell array, a page buffer including buffer units corresponding to a plurality of memory cells of a page, a control logic configured to control a first read operation such that first hard decision data based on a normal read level and first soft decision data based on an offset level with respect to a first page are stored in the page buffer. The control logic is configured to perform a control operation of outputting the first hard decision data to a memory controller after a second read operation with respect to a second page has started in response to a first command that requests read of the second page from the memory controller and outputting the first soft decision data to the memory controller while the second read operation is being performed in response to a second command from the memory controller.
Abstract:
A non-volatile memory device includes a memory cell array including a plurality of memory blocks that includes a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to select one among the plurality of memory blocks, based on an address, a voltage generator configured to apply word line voltages corresponding to selected word lines and unselected word lines, among the plurality of word lines, page buffers connected to the plurality of bit lines and configured to read data from a memory cell connected to one among the selected word lines of the selected one among the plurality of memory blocks, and a control logic configured to control the row decoder, the voltage generator, and the page buffers.
Abstract:
In a method of reading data in a nonvolatile memory device including a plurality of memory cells having a plurality of states including a first state and a second state, a first read operation for the first state is performed, and a second read operation for the second state is performed. To perform the first read operation, cell counts for a valley of the first state are obtained by performing a valley cell count operation for the first state, a first read voltage level for the first state is determined based on the cell counts and at least one first reference parameter for the first state, and a first sensing operation for the first state is performed by using the first read voltage level. To perform the second read operation, a second read voltage level for the second state is determined based on the cell counts and at least one second reference parameter for the second state, and a second sensing operation for the second state is performed by using the second read voltage level.
Abstract:
A memory system includes a non-volatile memory device including a machine learning (ML) module and a peripheral power management integrated circuit (IC), and a memory controller configured to command the non-volatile memory device to enter an idle mode by providing an external power command to the non-volatile memory device. The machine learning (ML) module configures a neural network and trains the neural network via machine learning, and the peripheral power management IC is configured to generate an internal power command that is different from the external power command based on the external power command and monitoring information corresponding to the ML module.
Abstract:
A method and an electronic device are provided in which, in response to a first user input, a stack of partially overlaid visual elements is displayed in response to the first user input. Each visual element corresponds to an application that is running in the electronic device and includes an index item representing the corresponding application. A second user input for selecting a visual element from the stack of partially overlaid visual elements is received through the touchscreen. An execution screen of an application corresponding to the selected visual element is displayed.
Abstract:
A controller including a non-volatile memory interface circuit connected to at least one non-volatile memory device and configured to control the at least one non-volatile memory device; an error correction circuit configured to perform an error correction operation on a codeword received from the non-volatile memory interface circuit according to an error correction decoding level from among a plurality of error correction decoding levels, wherein the non-volatile memory interface circuit is further configured to: receive side information from the at least one non-volatile memory device; predict a distribution of memory cells based on the side information; and select the error correction decoding level from among the plurality of error correction decoding levels according to the predicted distribution.
Abstract:
A controller includes control pins, a buffer memory, an error correction circuit, and a processor driving a read level search unit for a read operation of at least one non-volatile memory device, in which the read level search unit receives fail bit information of a sector error-corrected in the first page from the at least one non-volatile memory device when the error correction of the first read data is not possible, and searches for an optimal read level or set a soft decision offset using the fail bit information.
Abstract:
A method of connecting a service between a device and at least one other device is provided. The method includes recording, by the device, a user voice input in a state where a voice command button has been input, outputting first information based on the recorded user voice when an input of the voice command button is cancelled, receiving, by the device, second information corresponding to the first information, recognizing a service type according to the first information and the second information, connecting the device to a subject device in an operation mode of the device determined according to the recognized service type, and performing a service with the connected subject device.