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    Two transistor single capacitor ferroelectric memory
    21.
    发明授权
    Two transistor single capacitor ferroelectric memory 失效
    双晶体管单电容器铁电存储器

    公开(公告)号：US6101117A

    公开(公告)日：2000-08-08

    申请号：US273795

    申请日：1999-03-22

    Applicant: Sandip Tiwari

    Inventor： Sandip Tiwari

    IPC: H01L21/8247 ,  G11C11/22 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

    CPC classification number: G11C11/22

    Abstract: A back-plane ferroelectric memory apparatus employing a read transistor, a write transistor and a ferroelectric capacitor storage means. A back plane forms a gate region underneath the read transistor with the potential of the back plane affected by polarization of the ferroelectric capacitor. The write and read transistors are different, the write transistor may be a vertical structure and the read transistor may be a write transistor and the write transistor's drain is connected to the back plane of read transistor and a plate of the ferroelectric capacitor.

    Abstract translation: 采用读取晶体管，写入晶体管和铁电电容器存储装置的背面铁电存储装置。 背面在读取晶体管的下面形成栅极区域，其背面的电位受到铁电电容器极化的影响。 写入和读取晶体管是不同的，写入晶体管可以是垂直结构，并且读取晶体管可以是写入晶体管，并且写入晶体管的漏极连接到读取晶体管的背板和铁电电容器的板。

    Unpinned oxide-compound semiconductor structures and method of forming same
    24.
    发明授权
    Unpinned oxide-compound semiconductor structures and method of forming same 失效
    未固定的氧化物 - 半导体结构及其形成方法

    公开(公告)号：US5086321A

    公开(公告)日：1992-02-04

    申请号：US592611

    申请日：1990-10-04

    Applicant: John Batey ,  Sandip Tiwari ,  Steven L. Wright

    Inventor： John Batey ,  Sandip Tiwari ,  Steven L. Wright

    IPC: H01L21/28 ,  H01L21/314 ,  H01L21/336 ,  H01L29/267 ,  H01L29/43

    CPC classification number: H01L29/66522 ,  H01L21/28264 ,  H01L21/314 ,  H01L29/267 ,  H01L29/432

    Abstract: Unpinned epitaxial metal-oxide-compound semiconductor structures are disclosed and a method of fabricating such structures is described. Epitaxial layers of compound semiconductor are grown by MBE which result in the formation of a smooth surface having a stabilized reconstruction. An elemental semiconductor layer is deposited epitaxially in situ with the compound semiconductor layer which unpins the surface Fermi level. A layer of insulator material is then deposited on the elemental semiconductor layer by PECVD. In one embodiment, the compound semiconductor is GaAs and the elemental semiconductor is Si. The insulator material is a layer of high quality SiO.sub.2. A metal gate is deposited on the SiO.sub.2 layer to form an MOS device. The epitaxial GaAs layer has a density of states which permits the interface Fermi level to be moved through the entire forbidden energy gap. In another embodiment, the SiO.sub.2 deposition completely consumes the interface Si layer so that the resulting MOS device comprises SiO.sub.2 directly overlying the GaAs layer.

    Abstract translation: 公开了未连接的外延金属氧化物半导体结构，并描述了制造这种结构的方法。 通过MBE生长化合物半导体的外延层，这导致形成具有稳定重建的光滑表面。 原位沉积元素半导体层，其中化合物半导体层取代了表面费米能级。 然后通过PECVD将绝缘体材料层沉积在元素半导体层上。 在一个实施例中，化合物半导体是GaAs，元素半导体是Si。 绝缘材料是一层高质量的SiO2。 金属栅极沉积在SiO 2层上以形成MOS器件。 外延GaAs层具有允许接口费米能级移动通过整个禁止能隙的状态密度。 在另一个实施例中，SiO 2沉积完全消耗界面Si层，使得所得的MOS器件包括直接覆盖GaAs层的SiO 2。

    Heterostructure bipolar transistor
    25.
    发明授权
    Heterostructure bipolar transistor 失效
    异质结双极晶体管

    公开(公告)号：US4586071A

    公开(公告)日：1986-04-29

    申请号：US609406

    申请日：1984-05-11

    Applicant: Sandip Tiwari

    Inventor： Sandip Tiwari

    IPC: H01L29/205 ,  H01L21/331 ,  H01L29/20 ,  H01L29/423 ,  H01L29/45 ,  H01L29/47 ,  H01L29/73 ,  H01L29/732 ,  H01L29/737 ,  H01L29/72

    CPC classification number: H01L29/475 ,  H01L29/42304 ,  H01L29/452 ,  H01L29/7327 ,  H01L29/7371 ,  Y10S148/01 ,  Y10S148/084 ,  Y10S148/14

    Abstract: A heterojunction bipolar transistor having an ohmic contact at the intersection of the base and an adjacent region serving as emitter or collector that forms an ohmic contact to the base and a Schottky barrier to the adjacent emitter or collector. A GaAs-GaAlAs device with a platinum or palladium electrode over the intersection between collector and base and forming an ohmic contact to a p-base region and a Schottky barrier with an n-collector region thereof.

    Abstract translation: 一种异质结双极晶体管，在基极和用作发射极或集电极的相邻区域的交点处具有欧姆接触，与基极形成欧姆接触，对相邻的发射极或集电极形成肖特基势垒。 一种GaAs-GaAlAs器件，其在集电极和基极之间的交叉点上具有铂或钯电极，并形成与p基极区域的欧姆接触和具有n极集电极区域的肖特基势垒。

    Silicone ionomer composition
    26.
    发明授权
    Silicone ionomer composition 有权
    硅酮离聚物组合物

    公开(公告)号：US08974775B2

    公开(公告)日：2015-03-10

    申请号：US13343188

    申请日：2012-01-04

    Applicant: Anubhav Saxena ,  Alok Sarkar ,  Sandip Tiwari

    Inventor： Anubhav Saxena ,  Alok Sarkar ,  Sandip Tiwari

    IPC: C09D5/16 ,  A61K8/89

    CPC classification number: C08G77/26 ,  A01N25/10 ,  A01N25/24 ,  A01N25/30 ,  A61K8/894 ,  A61K8/895 ,  A61K8/898 ,  A61K8/899 ,  A61K2800/10 ,  A61Q19/00 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20 ,  C08G77/24 ,  C08G77/28 ,  C08G77/46 ,  C09D5/14 ,  C09D5/1675 ,  C09D183/06 ,  C09D183/08 ,  C09D183/12

    Abstract: There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M1aM2bM3cD1dD2eD3fT1gT2hT3iQj  (I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-Ix−Mny+; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate —SO3−, carboxylate —COO−, phosphonate —PO32− group and phosphate —OPO32−, where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): —R′—NR″2+—R′″—I  (III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2≦a+b+c+d+e+f+g+h+i+j≦6000, b+e+h>0 and c+f+i>0.

    Abstract translation: 本文提供了包含式（I）的硅氧烷：M1aM2bM3cD1dD2eD3fT1gT2hT3iQj（I）的官能化离子硅氧烷组合物，其含有带有离子对的一价基团并具有式（II）：-A-Ix-Mny +; 其中A是具有选自二价烃或烃氧基的至少2个间隔原子的间隔基团，其中I是离子基团，例如磺酸酯-SO 3 - ，羧酸酯-COO-，膦酸酯-PO 32 - 基团和磷酸酯-OPO 32 - 其中M是氢或独立地选自碱金属，碱土金属，过渡金属，金属，季铵和鏻基的阳离子; 或者具有式（III）的两性离子：-R'-NR“2 + -R'” - I（III）其中I如上定义，并且其中下标a，b，c，d，e，f， 受限于以下限制：2＆nlE; a + b + c + d + e + f + g + h + i + j＆nlE; 6000，b + e + h> 0和c + f + i> 0。

    Scanned probe microscopy (SPM) probe having angled tip
    29.
    发明授权
    Scanned probe microscopy (SPM) probe having angled tip 有权
    具有倾斜尖端的扫描探针显微镜（SPM）探针

    公开(公告)号：US08539611B1

    公开(公告)日：2013-09-17

    申请号：US13547378

    申请日：2012-07-12

    Applicant: Mark C. Reuter ,  Brian A. Bryce ,  Bojan R. Ilic ,  Sandip Tiwari

    Inventor： Mark C. Reuter ,  Brian A. Bryce ,  Bojan R. Ilic ,  Sandip Tiwari

    IPC: G01Q60/38 ,  H01L21/306 ,  B82Y40/00

    CPC classification number: G01Q70/10 ,  B82Y15/00 ,  G01Q70/12

    Abstract: A method of creating a probe for scanned probe microscopy is disclosed. The method includes providing a wafer having a support wafer layer and a device layer. The method includes masking the wafer with a masking layer. The method includes removing a portion of the masking layer at the device layer. The method includes etching the wafer along the portion of the masking layer that has been removed to create a crystal facet surface that is oriented at a tilt angle. The method includes epitaxially growing a tip along the crystal facet surface.

    Abstract translation: 公开了一种创建用于扫描探针显微镜的探针的方法。 该方法包括提供具有支撑晶片层和器件层的晶片。 该方法包括用掩模层掩蔽晶片。 该方法包括在器件层处去除掩模层的一部分。 该方法包括沿着被去除的掩模层的部分蚀刻晶片以产生以倾斜角定向的晶面表面。 该方法包括沿着晶面表面外延生长尖端。

    SILICONE IONOMER COMPOSITION
    30.
    发明申请
    SILICONE IONOMER COMPOSITION 有权
    硅胶离子组合物

    公开(公告)号：US20130172193A1

    公开(公告)日：2013-07-04

    申请号：US13343188

    申请日：2012-01-04

    Applicant: Anubhav Saxena ,  Alok Sarkar ,  Sandip Tiwari

    Inventor： Anubhav Saxena ,  Alok Sarkar ,  Sandip Tiwari

    IPC: C08G77/28

    CPC classification number: C08G77/26 ,  A01N25/10 ,  A01N25/24 ,  A01N25/30 ,  A61K8/894 ,  A61K8/895 ,  A61K8/898 ,  A61K8/899 ,  A61K2800/10 ,  A61Q19/00 ,  C08G77/12 ,  C08G77/14 ,  C08G77/20 ,  C08G77/24 ,  C08G77/28 ,  C08G77/46 ,  C09D5/14 ,  C09D5/1675 ,  C09D183/06 ,  C09D183/08 ,  C09D183/12

    Abstract: There is provided herein a functionalized ionic silicone composition comprising a silicone of the formula (I): M1aM2bM3cD1dD2eD3fT1gT2hT3iQj  (I) which contains a monovalent radical bearing ion-pairs and having the formula (II): -A-Ix-Mny+; where A is a spacing group having at least 2 spacing atoms selected from a divalent hydrocarbon or hydrocarbonoxy group, where I is an ionic group such as sulfonate —SO3−, carboxylate —COO−, phosphonate —PO32− group and phosphate —OPO32−, where M is hydrogen or a cation independently selected from alkali metals, alkali earth metals, transition metals, metals, quaternary ammonium and phosphonium groups; or, zwitterions having the formula (III): —R′—NR″2+—R′″—I  (III) where I is defined as above, and where the subscript a, b, c, d, e, f, g, h, i, j are zero or positive subject to the following limitations: 2≦a+b+c+d+e+f+g+h+i+j≦6000, b+e+h>0 and c+f+i>0.

    Abstract translation: 本文提供了包含式（I）的硅氧烷：M1aM2bM3cD1dD2eD3fT1gT2hT3iQj（I）的官能化离子硅氧烷组合物，其含有带有离子对的一价基团并具有式（II）：-A-Ix-Mny +; 其中A是具有选自二价烃或烃氧基的至少2个间隔原子的间隔基团，其中I是离子基团，例如磺酸酯-SO 3 - ，羧酸酯-COO-，膦酸酯-PO 32 - 基团和磷酸酯-OPO 32 - 其中M是氢或独立地选自碱金属，碱土金属，过渡金属，金属，季铵和鏻基的阳离子; 或者具有式（III）的两性离子：-R'-NR''2 + -R“'-I（III）其中I如上所定义，其中下标a，b，c，d，e， 受限于以下限制，f，g，h，i，j为零或正数：2 @ a + b + c + d + e + f + g + h + i + j @ 6000，b + e + h> 0 和c + f + i> 0。

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