公开(公告)号：US20060016671A1

公开(公告)日：2006-01-26

申请号：US10983590

申请日：2004-11-09

申请人： Sang-in Lee

发明人： Sang-in Lee

IPC分类号： H01H13/70

CPC分类号： H01H25/041

摘要： A switching device of an image recording and replaying apparatus, having: a frame with a button sheet having a guide boss opening positioned in a center of the button sheet and operation boss openings positioned around the guide boss opening, pairs of the operation boss openings being oppositely disposed with respect to the guide boss opening; a switchboard placed on a first side of the frame and having tact switches facing respective operation boss openings; an integrated button disposed to be elastically biased toward a second side of the frame opposite the first side, and having a guide boss inserted into the guide boss opening and operation bosses inserted into respective operation boss openings; and a fixation holder disposed on the guide boss to fix the integrated button to the frame, such that the operation bosses continuously contact with corresponding tact switches.

摘要翻译： 一种图像记录和重放装置的切换装置，具有：具有按钮片的框架，其具有位于按钮片的中心的引导凸起开口和位于引导凸起开口周围的操作凸起开口，成对的操作凸起开口为 相对于导向凸起开口相对设置; 布置在所述框架的第一侧上并且具有面向相应的操作凸起开口的触觉开关的开关板; 集成按钮，被设置为朝向与第一侧相对的框架的第二侧弹性偏置，并且具有插入到引导凸台开口中的引导凸起和插入到相应的操作凸起开口中的操作凸起; 以及设置在所述引导凸台上以将所述集成按钮固定到所述框架的固定架，使得所述操作凸台与相应的轻触开关持续接触。

公开(公告)号：US06576053B1

公开(公告)日：2003-06-10

申请号：US09679559

申请日：2000-10-06

申请人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

发明人： Yeong-kwan Kim ,  Young-wook Park ,  Jae-soon Lim ,  Sung-je Choi ,  Sang-in Lee

IPC分类号： C30B2504

CPC分类号： H01L21/31691 ,  C30B25/02 ,  C30B29/20 ,  H01L21/316

摘要： In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in cycles. Each cycle includes injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chamber that includes the substrate, purging the first reactant, injecting a second reactant into the reaction chamber, and purging the second reactant. The thin film is formed by a chemical reaction between the atom that forms the thin film and a second reactant whose binding energy with respect to the atom that forms the thin film is larger than the binding energy of the ligand with respect to the atom that forms the thin film and the generation of by-products is prevented. The generation of a hydroxide by-product in the thin film is suppressed by using a material that does not include a hydroxide as the second reactant, purging the second reactant, and reacting the second reactant with a third reactant that includes hydroxide. After purging the second reactant, the third reactant for removing impurities and improving the stoichiometry of the thin film is injected and purged. In this way, it is possible to obtain a thin film that does not include impurities and whose stoichiometry is excellent.

摘要翻译： 在使用原子层沉积（ALD）法形成薄膜的方法中，在基板上循环形成薄膜。 每个循环包括将包括形成薄膜的原子和配体的第一反应物注入到包括基板的反应室中，清洗第一反应物，将第二反应物注入反应室，以及清除第二反应物。 薄膜由形成薄膜的原子与第二反应物之间的化学反应形成，第二反应物的结合能相对于形成薄膜的原子的结合能大于配体相对于形成的原子的结合能 防止了薄膜和副产物的产生。 通过使用不包含氢氧化物作为第二反应物的材料，吹扫第二反应物，并使第二反应物与包含氢氧化物的第三反应物反应，可以抑制薄膜中氢氧化物副产物的产生。 在清洗第二反应物之后，注入和清除用于除去杂质的第三反应物和改善薄膜的化学计量。 以这种方式，可以获得不含杂质的化学计量优异的薄膜。

公开(公告)号：US06570253B1

公开(公告)日：2003-05-27

申请号：US09686623

申请日：2000-10-12

申请人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

发明人： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

IPC分类号： H01G904

CPC分类号： H01L28/40 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616

摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.

摘要翻译： 用于薄膜结构的多层膜，使用该多层膜的电容器以及制造多层膜和电容器的方法，所述多层膜包括在下层材料层和上层之间的组成过渡层 分别由相互作用参数彼此不同的不同元素形成的材料层，组成过渡层包含下部和上部材料层的两个元素，组成过渡层的浓度从组成过渡层的部分逐渐变化， 下部材料层到组合物过渡层的与上部材料层接触的部分，使得上部材料层的元素的浓度在与上部材料层相邻的部分中相对较大，每个下部和上部材料 层由铝，硅，锆，铈的氧化物或氮化物材料形成 钛，钛，钇，钽或铌。

公开(公告)号：US06013576A

公开(公告)日：2000-01-11

申请号：US902880

申请日：1997-07-30

申请人： Jae-eung Oh ,  Sang-in Lee ,  Chang-soo Park

发明人： Jae-eung Oh ,  Sang-in Lee ,  Chang-soo Park

IPC分类号： C23C16/02 ,  C23C16/34 ,  C23C16/50 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108 ,  H01L21/205

CPC分类号： H01L21/76864 ,  C23C16/0227 ,  C23C16/34 ,  H01L21/76841

摘要： A metal nitride layer is formed on a substrate by exposing the substrate to a mixture including a nitrogen-containing organometallic gas and a hydrogen plasma to form a metal nitride layer on the substrate. The nitrogen-containing organometallic gas may comprise penta dimethyl amido tantalum (Ta(N(CH.sub.3).sub.2).sub.5, and the metal nitride layer may be formed by exposing comprises the step of exposing the substrate to a mixture including penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 and a hydrogen plasma at a temperature greater than 300.degree. C., more preferably, at a temperature of 300.degree. C. to 750.degree. C. and a pressure of 0.5 torr to 1.5 torr. The penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 is preferably provided to a chamber in which the substrate is placed at a mass flow rate of 50 sccm to 150 sccm, and the hydrogen plasma referably provided to the chamber at a mass flow rate of 30 sccm to 100 sccm. The hydrogen plasma may be produced external to the chamber in an atmosphere comprising hydrogen and an inert gas such as argon. A tantalum nitride (Ta.sub.3 N.sub.5 layer having a resistivity less than 1.times.10.sup.4 .mu..OMEGA.-cm may thereby be formed.

摘要翻译： 通过将衬底暴露于包含含氮有机金属气体和氢等离子体的混合物在衬底上形成金属氮化物层，以在衬底上形成金属氮化物层。 含氮有机金属气体可以包含五聚二甲基氨基钽（Ta（N（CH 3）2）5，并且金属氮化物层可以通过曝光形成包括将基底暴露于包括五聚二甲基氨基钽气体 Ta（N（CH 3）2）5和氢等离子体，温度高于300℃，更优选在300℃至750℃的温度下，压力为0.5托至1.5托。 五元二甲基氨基钽气体（Ta（N（CH 3）2）5优选设置在其中以50sccm至150sccm的质量流速放置基板的室中，并且氢气等离子体可以在 质量流量为30sccm至100sccm，氢气等离子体可以在包含氢气和惰性气体如氩气的气氛中在室外产生，氮化钽（具有小于1×10 4μM欧姆/ cm的电阻率的Ta 3 N 5层可以 从而形成。

公开(公告)号：US5892254A

公开(公告)日：1999-04-06

申请号：US940258

申请日：1997-09-30

申请人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

发明人： Chang-soo Park ,  Sang-in Lee ,  Hong-ku Paik

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L29/76 ,  H01L23/48 ,  H01L23/52 ,  H01L29/94

CPC分类号： H01L21/7687 ,  H01L21/76841 ,  H01L21/76849 ,  H01L21/76855 ,  H01L28/60 ,  H01L28/75 ,  H01L21/28568 ,  H01L28/55

摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.

摘要翻译： 在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。 阻挡层包括难熔金属和晶界填充材料。 晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。 阻挡层可以减少并优选地防止氧的扩散，从而可以减小集成电路电容器的漏电流和氧化。

公开(公告)号：US5846859A

公开(公告)日：1998-12-08

申请号：US606193

申请日：1996-02-23

申请人： Sang-in Lee

发明人： Sang-in Lee

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/285 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L27/10852 ,  H01L28/55 ,  H01L28/60 ,  H01L21/28568 ,  Y10S148/148

摘要： A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.

摘要翻译： 提供了具有由高介电材料形成的电介质膜的半导体器件中的电容器及其制造方法。 电容器由包括电介质膜和非晶SiC层的电极组成。 因此，可以防止氧原子通过晶界扩散到底层中，并且可以防止在SiC层的表面上形成氧化物层，从而提供高可靠性的电容器电极和等于不比厚度大的氧化物厚度 需要。

公开(公告)号：US5589713A

公开(公告)日：1996-12-31

申请号：US456732

申请日：1995-06-01

申请人： Sang-in Lee ,  Chang-soo Park

发明人： Sang-in Lee ,  Chang-soo Park

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/54

CPC分类号： H01L21/76865 ,  H01L21/3105 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76858 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.

摘要翻译： 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一 形成在绝缘层上的完全填充开口的导电层。 由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。 此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。 因此，可以确保用溅射的Al完全填充开口。 尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

公开(公告)号：US5569961A

公开(公告)日：1996-10-29

申请号：US473050

申请日：1995-06-07

申请人： Sang-in Lee

发明人： Sang-in Lee

IPC分类号： H01L21/285 ,  H01L21/441 ,  H01L21/48 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L23/532 ,  H01L29/41 ,  H01L29/43

CPC分类号： H01L21/76838 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

摘要： The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.

摘要翻译： 本发明涉及一种用于半导体器件的布线结构及其制造方法，其填充低于一半微米的接触孔。 在半导体衬底上形成绝缘层，并在绝缘层中形成接触孔。 在绝缘层上，通过CVD法沉积第一金属，以形成填充接触孔的CVD金属层或CVD金属塞。 然后，将如此获得的CVD金属层或CVD金属加热件在低于第一金属熔点的高温下在真空中进行热处理，由此使CVD金属层的表面平坦化。 通过溅射法在CVD金属层或CVD金属插塞上沉积第二种金属，从而形成溅射金属层。 通过CVD法将接触孔填充第一金属，然后通过溅射法沉积可靠的溅射金属层。 布线层可用于下一代的半导体器件。

公开(公告)号：US5534463A

公开(公告)日：1996-07-09

申请号：US8775

申请日：1993-01-25

申请人： Sang-in Lee ,  Chang-soo Park

发明人： Sang-in Lee ,  Chang-soo Park

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L21/76865 ,  H01L21/3105 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76858 ,  H01L21/76882 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002

摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.

摘要翻译： 公开了具有新型接触结构的半导体器件的布线层。 半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一 形成在绝缘层上的完全填充开口的导电层。 由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。 此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。 因此，可以确保用溅射的Al完全填充开口。 尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

公开(公告)号：US07304253B2

公开(公告)日：2007-12-04

申请号：US10983590

申请日：2004-11-09

申请人： Sang-in Lee

发明人： Sang-in Lee

IPC分类号： H01H3/00

CPC分类号： H01H25/041

摘要： A switching device of an image recording and replaying apparatus, having: a frame with a button sheet having a guide boss opening positioned in a center of the button sheet and operation boss openings positioned around the guide boss opening, pairs of the operation boss openings being oppositely disposed with respect to the guide boss opening; a switchboard placed on a first side of the frame and having tact switches facing respective operation boss openings; an integrated button disposed to be elastically biased toward a second side of the frame opposite the first side, and having a guide boss inserted into the guide boss opening and operation bosses inserted into respective operation boss openings; and a fixation holder disposed on the guide boss to fix the integrated button to the frame, such that the operation bosses continuously contact with corresponding tact switches.

摘要翻译： 一种图像记录和重放装置的切换装置，具有：具有按钮片的框架，其具有位于按钮片的中心的引导凸起开口和位于引导凸起开口周围的操作凸起开口，成对的操作凸起开口为 相对于导向凸起开口相对设置; 布置在所述框架的第一侧上并且具有面向相应的操作凸起开口的触觉开关的开关板; 集成按钮，被设置为朝向与第一侧相对的框架的第二侧弹性偏置，并且具有插入到引导凸台开口中的引导凸起和插入到相应的操作凸起开口中的操作凸起; 以及设置在所述引导凸台上以将所述集成按钮固定到所述框架的固定架，使得所述操作凸台与相应的轻触开关持续接触。