公开(公告)号：US20130334525A1

公开(公告)日：2013-12-19

申请号：US13971944

申请日：2013-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Takeshi OSADA ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78648

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver circuit are provided over the same substrate, manufacturing cost can be reduced.

Abstract translation: 作为显示装置具有更高的清晰度，像素数，栅极线和信号线的数量增加。 当栅极线和信号线的数量增加时，存在难以安装包括用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，由此增加制造成本的问题。 用于驱动像素部分的像素部分和驱动电路设置在相同的基板上，驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管使用介于氧化物半导体上方和下方的栅电极之间的氧化物半导体。 因此，当像素部分和驱动电路设置在相同的基板上时，可以降低制造成本。

公开(公告)号：US20130280867A1

公开(公告)日：2013-10-24

申请号：US13924741

申请日：2013-06-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Shinya SASAGAWA ,  Akihiro ISHIZUKA

IPC: H01L29/66

CPC classification number: H01L29/6675 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L33/0058 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias.

公开(公告)号：US20130095587A1

公开(公告)日：2013-04-18

申请号：US13692310

申请日：2012-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Shinya SASAGAWA ,  Akihiro ISHIZUKA

IPC: H01L33/00 ,  H01L29/66

CPC classification number: H01L29/6675 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696 ,  H01L33/0058 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias.

Abstract translation: 本发明提供了一种制造具有少量漏电流的高可靠性半导体器件的方法。 在制造薄膜晶体管的方法中，使用抗蚀剂掩模进行蚀刻以在薄膜晶体管中形成背沟道部分，去除抗蚀剂掩模，蚀刻一部分后沟道以除去蚀刻残留物等 留在后通道部分，由此可以减少由残渣等引起的泄漏电流。 背沟道部分的蚀刻步骤可以通过使用非偏压的干蚀刻来进行。

公开(公告)号：US20130095582A1

公开(公告)日：2013-04-18

申请号：US13645091

申请日：2012-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Akihisa SHIMOMURA

IPC: H01L33/48

CPC classification number: H01L51/5246 ,  B23K26/28 ,  H01L51/56

Abstract: A method for manufacturing a sealed structure in which few cracks are generated is provided. Scan with the laser beam is performed so that there is no difference in an irradiation period between the middle portion and the perimeter portion of the glass layer and so that the scanning direction is substantially parallel to the direction in which solidification of the glass layer after melting proceeds. More specifically, in a region where the beam spot is overlapped with the glass layer, scan is performed with a laser beam having a beam spot shape whose width in a scanning direction is substantially uniform. Further, as a laser beam with which the glass layer is irradiated, a laser beam (a linear laser beam) having a linear beam spot shape with a major axis and a minor axis which is orthogonal to the major axis.

Abstract translation: 一种制造密封结构的方法，其中产生很少的裂纹。 进行激光扫描，使得玻璃层的中间部分和周边部分之间的照射周期没有差异，使得扫描方向基本上平行于熔化后玻璃层的凝固方向 收益。 更具体地说，在光斑与玻璃层重叠的区域中，用扫描方向的宽度大致均匀的光斑形状的激光束进行扫描。 此外，作为照射玻璃层的激光束，具有与长轴正交的长轴和短轴的直线光斑形状的激光（线性激光束）。

公开(公告)号：US20240431191A1

公开(公告)日：2024-12-26

申请号：US18709741

申请日：2022-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Yoichi IIKUBO

IPC: H10K71/40 ,  H10K59/12 ,  H10K71/00

Abstract: A high-resolution display device is provided. A pixel electrode is formed over a first insulating layer, surface treatment is performed to hydrophobize a region of the first insulating layer that is exposed from the pixel electrode, a first film including a light-emitting material is formed over the pixel electrode, a first sacrificial film is formed over the first film, a first layer and a first sacrificial layer are formed to cover the pixel electrode by processing the first film and the first sacrificial film, and the first layer is in contact with the first insulating layer in a region not overlapping with the pixel electrode.

公开(公告)号：US20230378189A1

公开(公告)日：2023-11-23

申请号：US18232409

申请日：2023-08-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Takeshi OSADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L27/1225 ,  H01L27/1251 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78645 ,  H01L29/42384 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/4908 ,  G02F1/1362

Abstract: As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost.

公开(公告)号：US20210242346A1

公开(公告)日：2021-08-05

申请号：US17172228

申请日：2021-02-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the semiconductor device without variation. The summary is to include an inverted-staggered (bottom-gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used for a semiconductor layer and a buffer layer is provided between the semiconductor layer and source and drain electrode layers. An ohmic contact is formed by intentionally providing a buffer layer containing In, Ga, and Zn and having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrode layers.

公开(公告)号：US20210118916A1

公开(公告)日：2021-04-22

申请号：US17133708

申请日：2020-12-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/3213 ,  H01L21/84 ,  H01L29/66 ,  H01L29/786 ,  B23K26/073

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

公开(公告)号：US20200321360A1

公开(公告)日：2020-10-08

申请号：US16876286

申请日：2020-05-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Motomu KURATA ,  Shinya SASAGAWA ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Tomoaki MORIWAKA ,  Jiro NISHIDA ,  Hidekazu MIYAIRI ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/84 ,  H01L23/522 ,  H01L27/13

Abstract: The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US20190341404A1

公开(公告)日：2019-11-07

申请号：US16515117

申请日：2019-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo ISOBE ,  Shunpei YAMAZAKI ,  Koji DAIRIKI ,  Hiroshi SHIBATA ,  Chiho KOKUBO ,  Tatsuya ARAO ,  Masahiko HAYAKAWA ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA ,  Koichiro TANAKA ,  Mai AKIBA

IPC: H01L27/12 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/786 ,  H01L21/84 ,  B23K26/073 ,  H01L21/20 ,  H01L29/66

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.