公开(公告)号：US20160365460A1

公开(公告)日：2016-12-15

申请号：US15246853

申请日：2016-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA ,  Masashi TSUBUKU

IPC: H01L29/786 ,  H01L29/24 ,  G11C19/28 ,  G02F1/1345 ,  G02F1/133 ,  H01L27/12 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

公开(公告)号：US20150049277A1

公开(公告)日：2015-02-19

申请号：US14527204

申请日：2014-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Hotaka MARUYAMA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/156 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.

Abstract translation: 本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。 包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。 为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏电极之间形成源极区或漏极区 层和包含SiOX的In-Sn-O系氧化物半导体层。 使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。

公开(公告)号：US20140138681A1

公开(公告)日：2014-05-22

申请号：US14164713

申请日：2014-01-27

Applicant: Semiconductor Energy Laboratory Co, Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA ,  Masashi TSUBUKU

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

Abstract translation: 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层。 在驱动电路部分的薄膜晶体管中，半导体层夹在栅电极层和导电层之间。 第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。

公开(公告)号：US20140106505A1

公开(公告)日：2014-04-17

申请号：US14107618

申请日：2013-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/66969 ,  H01L21/02502 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/28008 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.

Abstract translation: 公开了一种制造具有氧化物半导体作为沟道形成区域的薄膜晶体管的方法。 该方法包括： 在栅极绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成与所述氧化物半导体层接触的源电极层和漏电极层，使得所述氧化物半导体层的至少一部分露出; 以及在所述氧化物半导体层上形成氧化物绝缘膜并与其接触。 在形成氧化物绝缘膜之前，氧化物半导体的暴露部分可能在存在等离子体的情况下暴露于含氧气体。 该方法允许氧扩散到氧化物半导体层中，这有助于薄膜晶体管的优异特性。

公开(公告)号：US20130306947A1

公开(公告)日：2013-11-21

申请号：US13950404

申请日：2013-07-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI ,  Hotaka MARUYAMA

IPC: H01L51/52 ,  H01L29/786

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/52 ,  H01L2227/323

Abstract: An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.