公开(公告)号：US20090269493A1

公开(公告)日：2009-10-29

申请号：US12418165

申请日：2009-04-03

申请人： Michihiro Mizuno ,  Shinichi Kurotani ,  Shigeyoshi Netsu ,  Kyoji Oguro

发明人： Michihiro Mizuno ,  Shinichi Kurotani ,  Shigeyoshi Netsu ,  Kyoji Oguro

IPC分类号： C23C16/24

CPC分类号： C01B33/03 ,  C01B33/035

摘要： The present invention utilizes a silicon member (single-crystalline silicon rod), which is cut out from a single-crystalline silicon ingot which is grown by a CZ method or FZ method, as the core wire when manufacturing a silicon rod. Specifically, a planar silicon is cut out from a body portion which is obtained by cutting off a shoulder portion and a tail portion from a single-crystalline silicon ingot and is further cut into thin rectangles to obtain a silicon bar. In the case that the crystal growth axis orientation is , there are four crystal habit lines, and the silicon bar is cut out such that the surface forms an off-angle θ in a predetermined range with the crystal habit line. The provided polycrystalline silicon rod has a low impurity contamination and high single-crystallization efficiency.

摘要翻译： 本发明使用在制造硅棒时，通过CZ法或FZ法生长的单晶硅锭切出的硅构件（单晶硅棒）作为芯线。 具体地说，从通过从单晶硅锭切断肩部和尾部获得的主体部分切出平面硅，并进一步切割成细长矩形以获得硅棒。 在晶体生长轴取向为<100>的情况下，存在四条晶体习性线，切割出硅棒，使得该表面与晶体习性线形成预定范围的偏角θ。 所提供的多晶硅棒具有低杂质污染和高单结晶效率。

公开(公告)号：US07582221B2

公开(公告)日：2009-09-01

申请号：US10181829

申请日：2001-10-22

申请人： Shigeyoshi Netsu ,  Hisashi Masumura

发明人： Shigeyoshi Netsu ,  Hisashi Masumura

IPC分类号： C03C15/00 ,  H01L21/302

CPC分类号： H01L21/02024 ,  B24B37/345

摘要： The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirror surface of the wafer, a back surface of the wafer is polished to produce a reference plane thereof.

摘要翻译： 本发明提供一种晶片制造方法和晶片抛光装置，其能够控制晶片周边的下垂和最近需要强烈要求的纳米拓扑学值的改善以及晶片。 在用于制造晶片的镜面的抛光工艺中，抛光晶片的后表面以产生其参考平面。

公开(公告)号：US5538465A

公开(公告)日：1996-07-23

申请号：US369653

申请日：1995-01-06

申请人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

发明人： Shigeyoshi Netsu ,  Kihachiro Watanabe ,  Makoto Tsukada

IPC分类号： B24B37/04 ,  B24B37/30 ,  H01L21/304 ,  B24B7/04

CPC分类号： B24B37/30 ,  Y10T428/249961 ,  Y10T428/249975 ,  Y10T428/249979

摘要： An elastic foamed sheet is disclosed which is usable as waxless polishing backing pads for wafers and capable of producing mirror polish wafers excelling in flatness.This elastic foamed sheet possesses at least a foamed layer 2 and is characterized by the fact that a plurality of bubbles 4 in the foamed layer 2 meet the following conditions:(1) that the bubbles are slender discrete bubbles erected parallelly to one another and dispersed at a substantially equal pitch in the direction of width of the foamed layer 2 and the bubbles 4 are substantially equal in size, shape, and position of formation in the direction of thickness of the foamed layer 2,(2) that center lines of the bubbles 4 in the direction of length thereof are parallel to the direction of thickness of the foamed layer 2, and(3) that the diameters of the bubbles 4 are minimized in the terminal part of the foamed layer 2 on one surface side thereof and gradually increased in the direction from the one surface side to the other surface side of foamed layer 2 until the bubbles form openings 6 thereof in the surface of the foamed layer 2.

公开(公告)号：US09562289B2

公开(公告)日：2017-02-07

申请号：US13508826

申请日：2010-10-22

申请人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume ,  Masaru Hirahara

发明人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume ,  Masaru Hirahara

IPC分类号： C30B28/12 ,  C23C16/458 ,  C01B33/035 ,  C23C16/24 ,  C01B31/04

CPC分类号： C23C16/458 ,  C01B32/225 ,  C01B33/035 ,  C23C16/24

摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.

摘要翻译： 上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中 。 孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动 作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩 气相生长过程。

公开(公告)号：US09416444B2

公开(公告)日：2016-08-16

申请号：US13979789

申请日：2011-09-20

申请人： Yasushi Kurosawa ,  Shigeyoshi Netsu

发明人： Yasushi Kurosawa ,  Shigeyoshi Netsu

IPC分类号： C23C16/00 ,  C23C16/24 ,  C01B33/035 ,  C23C16/455

CPC分类号： C23C16/45563 ,  C01B33/035 ,  C23C16/24

摘要： Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.

摘要翻译： 原料气体供给喷嘴配置在其中心位于盘状基板的中心的虚拟同心圆（面积为基板的面积的一半以上）。 原料气体以150m / sec以上的流速从气体供给喷嘴喷射到钟罩中。 除了设置在基板的中心部分中的一个气体供应喷嘴之外，三个气体供应喷嘴可以布置在其中心部分处于气体供应喷嘴的中心的外接圆的正三角形的顶点位置处。 在气体供给喷嘴如此布置的情况下，在反应器内形成平滑的循环流。

公开(公告)号：US09126242B2

公开(公告)日：2015-09-08

申请号：US13704767

申请日：2011-03-07

申请人： Yasushi Kurosawa ,  Kyoji Oguro ,  Shinichi Kurotani ,  Shigeyoshi Netsu

发明人： Yasushi Kurosawa ,  Kyoji Oguro ,  Shinichi Kurotani ,  Shigeyoshi Netsu

IPC分类号： C01B33/035 ,  B08B3/04 ,  B08B9/08 ,  B08B3/10 ,  F28G13/00 ,  F26B5/12

CPC分类号： F26B5/042 ,  B08B3/04 ,  B08B3/10 ,  C01B33/035 ,  C23C16/4407 ,  F26B5/12 ,  F28G13/00

摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.

摘要翻译： 钟形瓶包括金属钟形瓶（1）和金属底板（2），其上放置钟形罩（1），并且包装（3）密封容器的内部。 连接到基板（2）上的压力计（4），气体引入管线（5）和气体排出管线（6），以便监测钟罩（1）的内部压力和引入 并排出气体。 真空泵（7）设置在气体排出管路（6）的路径中，真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力。 真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力，从而有效地去除水分，并在短时间内完成钟罩的干燥。

公开(公告)号：US09006002B2

公开(公告)日：2015-04-14

申请号：US13808404

申请日：2011-07-04

申请人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

发明人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

IPC分类号： H01L21/00 ,  H01L21/66 ,  G01R31/26 ,  C01B33/035 ,  G01N29/04 ,  G01N29/44 ,  G01N29/46 ,  G01N29/12

CPC分类号： H01L22/12 ,  C01B33/035 ,  G01M7/08 ,  G01N29/045 ,  G01N29/12 ,  G01N29/4418 ,  G01N29/4454 ,  G01N29/46 ,  G01N2291/0234 ,  G01N2291/2626 ,  G01N2291/2697 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).

摘要翻译： 用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。 然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。 此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。 获得多晶硅棒的长度（L）与峰值频率f之间的关系，根据峰值频率f是否在f≥1.471的范围内来确定多晶硅棒的坚固度 / L（区域A）。

公开(公告)号：US20140033966A1

公开(公告)日：2014-02-06

申请号：US14111597

申请日：2012-04-04

申请人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

发明人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

IPC分类号： C30B13/00 ,  G01N23/207 ,  C30B15/00

CPC分类号： C30B13/00 ,  C01B33/035 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007 ,  G01N23/207

摘要： Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

摘要翻译： 对采用化学气相沉积法沉积生长的多晶硅棒的垂直于长轴方向的截面为主面的板状样品进行取样; 在如此采样的每个板状样品的平面中全方位地进行X射线衍射测量; 并且当板状样品没有任何X射线衍射峰的衍射强度偏离了对于Miller指数<111>，<220>中的任何一个的平均值±2×标准偏差（μ±2sigma）时， ，<311>和<400>，选择多晶硅棒作为单晶硅生产中使用的原料。 使用这种多晶硅原料抑制局部发生未熔化的部分，有助于稳定生产单晶硅。

公开(公告)号：US20140030440A1

公开(公告)日：2014-01-30

申请号：US14110959

申请日：2012-04-16

申请人： Shigeyoshi Netsu ,  Yasushi Kurosawa

发明人： Shigeyoshi Netsu ,  Yasushi Kurosawa

IPC分类号： C01B33/035

CPC分类号： C01B33/035

摘要： A core wire holder 20 is formed with a core wire insert hole 21 having an opening part 22 on an upper surface of a main body and extending toward a lower surface side, and a silicon core wire 5 is inserted into the core wire insert hole 21. In addition, a slit-like gap part 60 extending along a virtual plane P including a central axis C of the core wire insert hole 21 is formed, and the slit-like gap part 60 is a gap part extending from the core wire insert hole 21 to reach an outer surface of the main body of the holder 20. The silicon core wire 5 inserted in the core wire insert hole 21 is fixed by fastening an upper part of the main body of the holder 20 from sides with, for example, a bolt/nut type fixing member 31.

摘要翻译： 芯线保持器20形成有芯线插入孔21，该芯线插入孔21在主体的上表面上具有开口部22并向下表面侧延伸，硅芯线5插入到芯线插入孔21中 此外，形成有沿着包括芯线插入孔21的中心轴线C的虚拟平面P延伸的狭缝状间隙部60，狭缝状间隙部60是从芯线插入物延伸的间隙部 孔21到达保持器20的主体的外表面。插入芯线插入孔21中的硅芯线5通过例如从侧面紧固保持器20的主体的上部而被固定 螺栓/螺母型固定部件31。

公开(公告)号：US20120201976A1

公开(公告)日：2012-08-09

申请号：US13502015

申请日：2010-07-27

申请人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Shinichi Kurotani ,  Kyoji Oguro ,  Fumitaka Kume

IPC分类号： C23C16/24 ,  B25B11/00 ,  C23C16/44

CPC分类号： C01B33/035 ,  Y10T29/53796 ,  Y10T29/53961

摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.

摘要翻译： 芯线保持架20的一端形成为截头圆锥形，具有倾斜面。 在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。 在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。 在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝 用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。