摘要:
A non-volatile microelectronic memory that has a memory cell array, which includes memory cell string pairs that share a bitline contact, that have separate source lines, and that have at least two transistors within each memory cell string that may be programming for sharing the bitline contact.
摘要:
The present disclosure includes circuits, systems and methods for regulating voltage. One voltage regulator system embodiment includes a voltage regulator having an output and a number of stages coupled in parallel to the output of the voltage regulator. Each stage includes a source follower circuit, and a sample and hold circuit coupled in series between the output of the voltage regulator and an input of the source follower circuit.
摘要:
Embodiments are provided that include a method including providing a first pulsed gate signal to a selected memory cell, wherein the pulsed gate signal alternates between a first voltage level and a second voltage level during a time period and sensing a data line response to determine data stored on the selected memory of cells. Further embodiments provide a system including a memory device, having a regulator circuit coupled to a plurality of access lines of a NAND memory cell, and a switching circuit configured to sequentially bias at least one of the plurality of the access lines between a first voltage level and a second voltage level based on an input signal.
摘要:
Voltage regulators, memories, and methods for providing a regulated output voltage are disclosed. For example, one such voltage regulator includes a comparator circuit, a driver circuit, an impedance circuit, and a modulation circuit. The comparator circuit generates an output voltage according to a difference between a reference voltage and a feedback voltage. The driver circuit is coupled to an output of the comparator circuit and drives the regulated output voltage at an output node according to the output voltage from the comparator circuit. The impedance circuit is coupled to the comparator circuit and provides the feedback voltage to the comparator circuit in response to a detection current from the output node. The modulation circuit is coupled to the impedance circuit and adjusts a modulation current component of the detection current to adjust the regulated output voltage.
摘要:
The present disclosure includes circuits, systems and methods for regulating voltage. One voltage regulator system embodiment includes a voltage regulator having an output and a number of stages coupled in parallel to the output of the voltage regulator. Each stage includes a source follower circuit, and a sample and hold circuit coupled in series between the output of the voltage regulator and an input of the source follower circuit.
摘要:
A semiconductor memory device comprises memory cells, a bitline connected to the memory cells, a read circuit including a precharge circuit, and a first transistor connected between the bitline and the read circuit, wherein a first voltage is applied to a gate of the first transistor when the precharge circuit precharges the bitline, and a second voltage which is different from the first voltage is applied to the gate of the first transistor when the read circuit senses a change in a voltage of the bitline.
摘要:
A high voltage switching circuit that has a depletion mode NMOS transistor, an enhancement mode PMOS transistor and, an enhancement mode NMOS transistor. A control circuit generates first and second control signals. A first control signal controls the enhancement mode NMOS transistor and a logical combination of both control signals provides a bias to control the PMOS transistor. The bias on the PMOS transistor provides a gate voltage greater than ground potential after the high voltage has been switched to the circuit output.
摘要:
Method and apparatus for generating a word-line voltage are disclosed. A word-line voltage generator includes a first current source, an adjustable current source, and a voltage converter, all operably coupled to a current sum node. The first current source generates a first current wherein a voltage derived from the first current at least partially comprises a cell location-dependent temperature coefficient varying with a location of a memory cell in a string of interconnected bit cells. The adjustable current source generates a second current that is substantially independent of a temperature change. The voltage converter is configured for generating a word-line signal having a word-line voltage proportional to the first current.
摘要:
Methods and an apparatuses for generating a word-line voltage are disclosed. A word-line voltage generator includes a first current source, an adjustable current source, adjustable current sink, and a voltage converter, all operably coupled to a current sum node. The first current source generates a first current having a temperature coefficient substantially equal to a temperature coefficient of at least one bit cell. The adjustable current source generates a second current that is substantially independent of a temperature change. The adjustable current sink sinks a third current that is substantially independent of a temperature change. The voltage converter is configured for generating a word-line signal having a word-line voltage proportional to a reference current, wherein the reference current comprises the first current, plus the second current, and minus the third current.
摘要:
Methods and apparatuses for generating a power-on-reset signal that is substantially independent of temperature change are disclosed. A reset circuit comprises a voltage generator, a first resistance element, a current generator, and a comparator. The voltage generator is configured for generating a first voltage signal having a negative temperature coefficient. The first resistance element is operably coupled between a supply voltage and a second voltage signal. The current generator is operably coupled to the second voltage signal and configured for sinking a reference current having a positive temperature coefficient and an offset current. The comparator is configured for comparing the first voltage signal to the second voltage signal to generate a reset signal. The present invention further includes semiconductor devices, semiconductor wafers, and electronic systems including the method or apparatus for generating the power-on-reset signal.