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公开(公告)号：US20060194377A1
公开(公告)日：2006-08-31
申请号：US11321641
申请日：2005-12-30
IPC分类号： H01L21/84 , H01L21/20 , H01L21/425
CPC分类号： G02B27/09 , C23C14/58 , C23C14/5813 , C23C16/56 , G02B27/0966 , H01L21/2022 , H01L21/2026 , H01L21/26513 , H01L21/268 , H01L21/84 , H01L27/1285
摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10N≦−0.02(E−350), where N is the number of shots of the pulsed laser beam.
摘要翻译： 一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加 密度E（mJ / cm 2），条件是其满足关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> log 10 < /SUB>N<=-0.02(E-350），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中N是脉冲激光束的镜头数。
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公开(公告)号：US20060128685A1
公开(公告)日：2006-06-15
申请号：US10543915
申请日：2004-02-06
IPC分类号： A61K31/55 , A61K31/541 , A61K31/5377 , A61K31/496 , A61K31/454 , A61K31/4178 , C07D417/02 , C07D413/02 , C07D403/02
CPC分类号： A61K31/551 , A61K31/4439 , A61K31/4545 , A61K31/496 , A61K31/501 , A61K31/5377 , A61K31/541 , C07D231/14 , C07D401/04 , C07D401/14 , C07D403/04 , C07D413/14 , C07D493/04
摘要： The present invention is directed to a strong platelet aggregation-inhibiting agent which does not inhibit COX-1 or COX-2. The present invention provides compounds represented by formula (I) or formula (II), salts of the compounds, and solvates of the compounds or the salts. Also provided are medicaments containing any of the compounds, salts, or solvates and preventive and/or therapeutic agents for ischemic diseases, containing any of the compounds, salts, or the solvates.
摘要翻译： 本发明涉及不抑制COX-1或COX-2的强烈的血小板聚集抑制剂。 本发明提供由式（I）或式（II）表示的化合物的盐，化合物的盐和化合物或其盐的溶剂合物。 还提供了含有任何化合物，盐或溶剂合物的药物，以及含有任何化合物，盐或溶剂合物的缺血性疾病的预防和/或治疗剂。
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23.发明授权Method of manufacturing a semiconductor device utilizing a laser annealing process 失效利用激光退火工艺制造半导体器件的方法公开(公告)号：US06440785B1
公开(公告)日：2002-08-27
申请号：US09351159
申请日：1999-07-12
IPC分类号： H01L2100
CPC分类号： G02B27/09 , C23C14/58 , C23C14/5813 , C23C16/56 , G02B27/0966 , H01L21/2022 , H01L21/2026 , H01L21/26513 , H01L21/268 , H01L21/84 , H01L27/1285
摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein, said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm2) provided that it satisfies the relation: log10N≦−0.02(E−350), where N is the number of shots of the pulsed laser beam.
摘要翻译： 一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加 密度E（mJ / cm2），条件是它满足关系：其中N是脉冲激光束的镜头数。
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公开(公告)号：US5897799A
公开(公告)日：1999-04-27
申请号：US661869
申请日：1996-06-11
IPC分类号： H01L21/20 , B23K26/00 , B23K26/06 , B23K26/067 , B23K101/40 , C23C14/58 , C23C16/56 , G02B13/00 , G02B27/09 , G02F1/00 , G02F1/35 , H01L21/00 , H01L21/02 , H01L21/26 , H01L21/265 , H01L21/268 , H01L21/322 , H01L21/324 , H01S3/00 , H01S3/09 , H01S3/097 , H01S5/024
CPC分类号： G02B27/09 , C23C14/58 , C23C14/5813 , C23C16/56 , G02B27/0966 , H01L21/2026 , H01L21/26513 , H01L21/268 , H01L27/1285 , H01L21/2022 , H01L21/84
摘要： A laser processing apparatus including a laser device for emitting a first laser beam having a first cross section having a length and a width and an optical system for modifying the first laser beam to produce a second laser beam having a virtual focus. The second laser beam has a second cross section of which length is larger than the length of the first cross section and is constant with propagation of the second laser beam. The apparatus further includes a condenser located after the virtual focus for focusing the second laser beam on a specimen to be treated, wherein said second laser beam is condensed in only a widthwise direction of the cross section, and device for moving the specimen along the widthwise direction. Specifically, laser processing apparatus may include a laser device, a vertical fly-eye lens for homogenizing an intensity along a lengthwise direction of the first cross section, a mirror for directing the laser beam and cylindrical convex lens.
摘要翻译： 一种激光加工装置，包括用于发射具有长度和宽度的第一横截面的第一激光束的激光装置和用于修改第一激光束以产生具有虚焦点的第二激光束的光学系统。 第二激光束的第二横截面的长度大于第一横截面的长度，并且随着第二激光束的传播而恒定。 该装置还包括位于虚拟焦点之后的聚光器，用于将第二激光束聚焦在被处理样品上，其中所述第二激光束仅在横截面的宽度方向上冷凝，以及用于沿着宽度方向移动样本的装置 方向。 具体地，激光加工装置可以包括激光装置，用于使沿着第一横截面的长度方向均匀化的强度的垂直复眼透镜，用于引导激光束和圆柱形凸透镜的反射镜。
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公开(公告)号：US5858473A
公开(公告)日：1999-01-12
申请号：US709108
申请日：1996-09-06
IPC分类号： H01L21/20 , B23K26/00 , B23K26/06 , B23K26/067 , B23K101/40 , C23C14/58 , C23C16/56 , G02B13/00 , G02B27/09 , G02F1/00 , G02F1/35 , H01L21/00 , H01L21/02 , H01L21/26 , H01L21/265 , H01L21/268 , H01L21/322 , H01L21/324 , H01S3/00 , H01S3/09 , H01S3/097 , H01S5/024 , B05D3/00 , C23C14/14
CPC分类号： G02B27/09 , C23C14/58 , C23C14/5813 , C23C16/56 , G02B27/0966 , H01L21/2026 , H01L21/26513 , H01L21/268 , H01L27/1285 , H01L21/2022 , H01L21/84
摘要： A laser annealing process for recovering crystallinity of a deposited semiconductor film such as of silicon which had undergone morphological damage, said process comprising activating the semiconductor by irradiating a pulsed laser beam operating at a wavelength of 400 nm or less and at a pulse width of 50 nsec or less onto the surface of the film, wherein,said deposited film is coated with a transparent film such as a silicon oxide film at a thickness of from 3 to 300 nm, and the laser beam incident to said coating is applied at an energy density E (mJ/cm.sup.2) provided that it satisfies the relation:log.sub.10 N.ltoreq.-0.02(E-350),where N is the number of shots of the pulsed laser beam.
摘要翻译： 一种激光退火工艺，用于回收沉积的半导体膜（例如已经形成损伤的硅）的半导体膜的结晶度，所述方法包括通过照射在400nm或更小的波长下以脉冲宽度为50的脉冲激光束来激活半导体 nsec以下，其中，所述沉积膜涂覆有厚度为3至300nm的诸如氧化硅膜的透明膜，并且入射到所述涂层的激光束以能量施加 密度E（mJ / cm 2），条件是其满足关系：log 10 N≤-0.02（E-350），其中N是脉冲激光束的射击次数。
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公开(公告)号：US07622471B2
公开(公告)日：2009-11-24
申请号：US10543915
申请日：2004-02-06
IPC分类号： A61K31/497 , C07D237/00 , C07D237/02
CPC分类号： A61K31/551 , A61K31/4439 , A61K31/4545 , A61K31/496 , A61K31/501 , A61K31/5377 , A61K31/541 , C07D231/14 , C07D401/04 , C07D401/14 , C07D403/04 , C07D413/14 , C07D493/04
摘要： The present invention is directed to a strong platelet aggregation-inhibiting agent which does not inhibit COX-1 or COX-2. Further, the present invention provides compounds represented by formula (I), salts of the compounds, and solvates or hydrates of the compounds or the salts. Also provided are medicaments containing any of the compounds, salts, or solvates and preventive and/or therapeutic agents for ischemic diseases, containing any of the compounds, salts, or the solvates or hydrates.
摘要翻译： 本发明涉及不抑制COX-1或COX-2的强烈的血小板聚集抑制剂。 此外，本发明提供由式（I）表示的化合物，化合物的盐，化合物或其盐的溶剂合物或水合物。 还提供了含有任何化合物，盐或溶剂化物的药物，以及含有任何化合物，盐或溶剂合物或水合物的缺血性疾病的预防和/或治疗剂。
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公开(公告)号：US20070141859A1
公开(公告)日：2007-06-21
申请号：US11705793
申请日：2007-02-14
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , B23K26/04 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L21/8221 , H01L21/84 , H01L27/1285 , Y10S117/904 , Y10S148/09
摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的台，从而防止归因于舞台的运动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。
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公开(公告)号：US07176283B1
公开(公告)日：2007-02-13
申请号：US09208629
申请日：1998-12-08
IPC分类号： C07K14/705
CPC分类号： C07K14/705 , A61K38/00 , G01N33/6893 , G01N33/86 , G01N2333/705 , G01N2333/974 , G01N2500/00
摘要： Disclosed are cDNAs and genomic DNAs encoding protease-activated receptor 3 (PAR3) from mouse and human, and the recombinant polypeptides expressed from such cDNAs. The recombinant receptor polypeptides, receptor fragments and analogs expressed on the surface of cells are used in methods of screening candidate compounds for their ability to act as agonists or antagonists to the effects of interaction between thrombin and PAR3. Agonists are used as therapeutics to treat wounds, thrombosis, atherosclerosis, restenosis, inflammation, and other thrombin-activated disorders. Antagonists are used as therapeutics to control blood coagulation and thereby treating heart attack and stroke. Antagonists mediate inflammatory and proliferative responses to injury as occur in normal wound healing and variety of diseases including atherosclerosis, restenosis, pulmonary inflammation (ARDS) and glomerulosclerosis. Antibodies specific for a protease-activated receptor 3 (or receptor fragment or analog) and their use as a therapeutic are also disclosed.
摘要翻译： 公开了编码来自小鼠和人的蛋白酶活化受体3（PAR3）的cDNA和基因组DNA，以及从这些cDNA表达的重组多肽。 在细胞表面表达的重组受体多肽，受体片段和类似物用于筛选候选化合物作为激动剂或拮抗剂对凝血酶和PAR3之间相互作用的作用的能力的方法。 激动剂用作治疗创伤，血栓形成，动脉粥样硬化，再狭窄，炎症和其他凝血酶激活的疾病。 拮抗剂用作治疗剂以控制血液凝固，从而治疗心脏病发作和中风。 拮抗剂介导在正常伤口愈合和各种疾病（包括动脉粥样硬化，再狭窄，肺部炎症（ARDS）和肾小球硬化）中发生的损伤的炎症和增殖反应。 还公开了对蛋白酶激活受体3（或受体片段或类似物）特异的抗体及其作为治疗剂的用途。
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公开(公告)号：US06638800B1
公开(公告)日：2003-10-28
申请号：US09409899
申请日：1999-10-01
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , B23K26/04 , H01L21/02532 , H01L21/2026 , H01L21/268 , H01L21/8221 , H01L21/84 , H01L27/1285 , Y10S117/904 , Y10S148/09
摘要： A laser processing process which comprises laser annealing a silicon film 2 &mgr;m or less in thickness by irradiating at laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
摘要翻译： 一种激光加工工艺，其包括通过在波长400nm或更小的激光束照射波长激光退火2μm或更小的硅膜，并以脉冲宽度为50nsec以上，优选为100nsec的脉冲模式操作， 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。
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公开(公告)号：US5891764A
公开(公告)日：1999-04-06
申请号：US739192
申请日：1996-10-30
CPC分类号： B23K26/04 , H01L21/2026 , H01L21/268 , H01L21/8221 , H01L21/84 , H01L27/1285 , Y10S117/904 , Y10S148/09
摘要： A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
摘要翻译： 一种激光加工方法，其特征在于，激光退火厚度在2μm以下的硅膜，通过照射波长400nm以下的激光束，脉冲宽度为50nsec以上，优选为100nsec 或者更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。
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