公开(公告)号：US20070141859A1

公开(公告)日：2007-06-21

申请号：US11705793

申请日：2007-02-14

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的台，从而防止归因于舞台的运动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US06638800B1

公开(公告)日：2003-10-28

申请号：US09409899

申请日：1999-10-01

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 &mgr;m or less in thickness by irradiating at laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工工艺，其包括通过在波​​长400nm或更小的激光束照射波长激光退火2μm或更小的硅膜，并以脉冲宽度为50nsec以上，优选为100nsec的脉冲模式操作， 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US5891764A

公开(公告)日：1999-04-06

申请号：US739192

申请日：1996-10-30

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： B23K26/04 ,  H01L21/20 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L21/00

CPC分类号： B23K26/04 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，激光退火厚度在2μm以下的硅膜，通过照射波长400nm以下的激光束，脉冲宽度为50nsec以上，优选为100nsec 或者更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US5643801A

公开(公告)日：1997-07-01

申请号：US511466

申请日：1995-08-04

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： B23K26/04 ,  H01L21/20 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  B23K26/02 ,  H01L21/268

CPC分类号： B23K26/04 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which includes laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more and preferably, 100 nsec or more. The invention further relates to a laser processing apparatus which includes a laser generation device and a stage for mounting thereon a sample provide separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其包括通过照射波长为400nm以下的激光束并以脉冲宽度为50ns以上，优选为100nsec的脉冲模式来激光退火2μm以下的硅膜， 更多。 本发明还涉及一种激光加工装置，其包括激光产生装置和用于在其上安装样品的载物台，与所述装置分开提供，从而防止归因于载物台移动的振动传递到激光产生装置和光学 系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US07799665B2

公开(公告)日：2010-09-21

申请号：US11705793

申请日：2007-02-14

申请人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其包括通过照射400nm以下的波长的激光束并以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US07179726B2

公开(公告)日：2007-02-20

申请号：US10367831

申请日：2003-02-19

申请人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US06613614B2

公开(公告)日：2003-09-02

申请号：US10101830

申请日：2002-03-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06369410B1

公开(公告)日：2002-04-09

申请号：US09210781

申请日：1998-12-15

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2949

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US08574976B2

公开(公告)日：2013-11-05

申请号：US12904235

申请日：2010-10-14

申请人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Naoto Kusumoto ,  Hideto Ohnuma ,  Koichiro Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L27/127 ,  G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78696

摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

公开(公告)号：US08471262B2

公开(公告)日：2013-06-25

申请号：US13238754

申请日：2011-09-21

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Jun Koyama ,  Yukio Tanaka ,  Hidehito Kitakado ,  Hideto Ohnuma

IPC分类号： H01L27/14

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/123 ,  G02F2202/104 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/458 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78675 ,  H01L2029/7863 ,  H01L2227/323

摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.