公开(公告)号：US20070141859A1

公开(公告)日：2007-06-21

申请号：US11705793

申请日：2007-02-14

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的台，从而防止归因于舞台的运动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US06638800B1

公开(公告)日：2003-10-28

申请号：US09409899

申请日：1999-10-01

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L2100

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 &mgr;m or less in thickness by irradiating at laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said devices to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工工艺，其包括通过在波​​长400nm或更小的激光束照射波长激光退火2μm或更小的硅膜，并以脉冲宽度为50nsec以上，优选为100nsec的脉冲模式操作， 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US5891764A

公开(公告)日：1999-04-06

申请号：US739192

申请日：1996-10-30

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： B23K26/04 ,  H01L21/20 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  H01L21/00

CPC分类号： B23K26/04 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，激光退火厚度在2μm以下的硅膜，通过照射波长400nm以下的激光束，脉冲宽度为50nsec以上，优选为100nsec 或者更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US5643801A

公开(公告)日：1997-07-01

申请号：US511466

申请日：1995-08-04

申请人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hiroaki Ishihara ,  Kazuhisa Nakashita ,  Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： B23K26/04 ,  H01L21/20 ,  H01L21/77 ,  H01L21/822 ,  H01L21/84 ,  B23K26/02 ,  H01L21/268

CPC分类号： B23K26/04 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which includes laser annealing a silicon film 2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more and preferably, 100 nsec or more. The invention further relates to a laser processing apparatus which includes a laser generation device and a stage for mounting thereon a sample provide separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其包括通过照射波长为400nm以下的激光束并以脉冲宽度为50ns以上，优选为100nsec的脉冲模式来激光退火2μm以下的硅膜， 更多。 本发明还涉及一种激光加工装置，其包括激光产生装置和用于在其上安装样品的载物台，与所述装置分开提供，从而防止归因于载物台移动的振动传递到激光产生装置和光学 系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US07799665B2

公开(公告)日：2010-09-21

申请号：US11705793

申请日：2007-02-14

申请人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其包括通过照射400nm以下的波长的激光束并以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US07179726B2

公开(公告)日：2007-02-20

申请号：US10367831

申请日：2003-02-19

申请人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

发明人： Hideto Ohnuma ,  Nobuhiro Tanaka ,  Hiroki Adachi

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  B23K26/04 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/1285 ,  Y10S117/904 ,  Y10S148/09

摘要： A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more.A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.

摘要翻译： 一种激光加工方法，其特征在于，通过照射波长400nm以下的激光束，以脉冲宽度为50ns以上，优选为100nsec的脉冲模式，激光退火2μm以下的硅膜， 更多。 一种激光加工装置，包括激光产生装置和用于在其上安装与所述装置分开设置的样品的载台，从而防止归因于载物台移动的振动传递到激光产生装置和光学系统。 可以获得稳定的激光束，从而提高生产率。

公开(公告)号：US06613614B2

公开(公告)日：2003-09-02

申请号：US10101830

申请日：2002-03-21

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US06369410B1

公开(公告)日：2002-04-09

申请号：US09210781

申请日：1998-12-15

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Etsuko Fujimoto ,  Takeshi Fukunaga ,  Hiroki Adachi ,  Hideto Ohnuma

IPC分类号： H01L2949

CPC分类号： H01L29/66757 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78621

摘要： A TFT using an aluminum material for a gate electrode is manufactured at a high yield factor. The gate electrode provided over an active layer and a gate insulating film is constituted by a lamination film of a tantalum layer and an aluminum layer. In this structure, the tantalum layer functions as a stopper, so that it is possible to prevent a constituent material of the aluminum layer from intruding into the gate insulating film. An end portion of the tantalum layer is transformed into tantalum oxide, which has an effect to lower damage at ion implantation to the gate insulating film in the formation of an LDD region.

公开(公告)号：US09214532B2

公开(公告)日：2015-12-15

申请号：US11841307

申请日：2007-08-20

申请人： Shunpei Yamazaki ,  Hiroki Adachi

发明人： Shunpei Yamazaki ,  Hiroki Adachi

IPC分类号： H01L27/108 ,  H01L29/04 ,  H01L29/76 ,  H01L27/01 ,  H01L29/66 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/6675 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability.

摘要翻译： 本发明涉及一种半导体器件，其包括由具有新颖的GOLD（栅极重叠LDD（轻掺杂漏极））结构的薄膜晶体管构成的电路。 薄膜晶体管包括与第一栅极电极和栅极绝缘膜接触的第一栅电极和第二电极。 此外，通过使用第一栅电极作为掩模来形成LDD，并且通过使用第二栅电极作为掩模形成源区和漏区。 然后，形成与第二栅电极重叠的LDD。 该结构提供了具有高可靠性的薄膜晶体管。

公开(公告)号：US08481370B2

公开(公告)日：2013-07-09

申请号：US11498164

申请日：2006-08-03

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Hidekazu Takahashi ,  Daiki Yamada ,  Yoshikazu Hiura

IPC分类号： H01L21/00

CPC分类号： H01L31/0203 ,  H01L23/49805 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/83851 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.

摘要翻译： 本发明提供一种半导体器件，其具有能够安装在布线基板上的结构，对于形成在薄膜基板，薄膜状基板或片状基板上的半导体器件。 另外，本发明提供一种能够提高安装在布线基板上的可靠性的半导体装置的制造方法。 本发明的一个特征是通过具有各向异性导电性的介质将形成在具有隔离衬底的半导体元件与形成有导电膜的构件接合。