公开(公告)号：US20060197054A1

公开(公告)日：2006-09-07

申请号：US11407195

申请日：2006-04-20

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： C09K13/00 ,  C09K13/06

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

摘要翻译： 包含含有氧化铈颗粒的氧化铈浆料，分散剂和水以及含有分散剂和水的液体添加剂的CMP研磨剂; 和用于CMP研磨剂的液体添加剂。 一种用于抛光衬底的方法，其包括将其上形成有待研磨的膜的衬底保持在研磨台板的抛光垫上，随后按压并移动所述衬底和所述研磨台板，同时在其间提供上述CMP磨料 要抛光的膜和抛光垫，从而抛光待抛光的膜。 CMP研磨剂和抛光方法可用于抛光硅氧烷膜或氮化硅膜等抛光表面，而不会用钠离子等碱金属污染待抛光表面，而且不会产生缺陷， CMP研磨剂的储存稳定性优异。

公开(公告)号：US20060186372A1

公开(公告)日：2006-08-24

申请号：US11407196

申请日：2006-04-20

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： C09K13/00

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

公开(公告)号：US20050269295A1

公开(公告)日：2005-12-08

申请号：US11177352

申请日：2005-07-11

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： B24B37/00 ,  B24B37/04 ,  B24D3/34 ,  B44C1/22 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/302 ,  H01L21/3105

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

摘要翻译： 包含含有氧化铈颗粒的氧化铈浆料，分散剂和水以及含有分散剂和水的液体添加剂的CMP研磨剂; 和用于CMP研磨剂的液体添加剂。 一种用于抛光衬底的方法，其包括将其上形成有待研磨的膜的衬底保持在研磨台板的抛光垫上，随后按压并移动所述衬底和所述研磨台板，同时在其间提供上述CMP磨料 要抛光的膜和抛光垫，从而抛光待抛光的膜。 CMP研磨剂和抛光方法可用于抛光硅氧烷膜或氮化硅膜等抛光表面，而不会用钠离子等碱金属污染待抛光表面，而且不会产生缺陷， CMP研磨剂的储存稳定性优异。

公开(公告)号：US06783434B1

公开(公告)日：2004-08-31

申请号：US09856491

申请日：2001-06-19

申请人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

发明人： Toshihiko Akahori ,  Toranosuke Ashizawa ,  Keizo Hirai ,  Miho Kurihara ,  Masato Yoshida ,  Yasushi Kurata

IPC分类号： B24B100

CPC分类号： B24D3/34 ,  B24B37/04 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A CMP abrasive comprising a cerium oxide slurry containing cerium oxide particles, a dispersant and water, and a liquid additive containing a dispersant and water; and a liquid additive for the CMP abrasive. A method for polishing a substrate which comprises holding a substrate having, formed thereon, a film to be polished against a polishing pad of a polishing platen, followed by pressing, and moving the substrate and the polishing platen while supplying the above CMP abrasive in between the film to be polished and the polishing pad to thereby polish the film to be polished. The CMP abrasive and the method for polishing can be used for polishing a surface to be polished such as a silicone oxide film or a silicon nitride film without contaminating the surface to be polished with an alkali metal such as sodium ions and with no flaws, and the CMP abrasive is excellent in storage stability.

摘要翻译： 包含含有氧化铈颗粒的氧化铈浆料，分散剂和水以及含有分散剂和水的液体添加剂的CMP研磨剂; 和用于CMP研磨剂的液体添加剂。 一种用于抛光衬底的方法，其包括将其上形成有待研磨的膜的衬底保持在研磨台板的抛光垫上，随后按压并移动所述衬底和所述研磨台板，同时在其间提供上述CMP磨料 要抛光的膜和抛光垫，从而抛光待抛光的膜。 CMP研磨剂和抛光方法可用于抛光硅氧烷膜或氮化硅膜等抛光表面，而不会用钠离子等碱金属污染待抛光表面，而且不会产生缺陷， CMP研磨剂的储存稳定性优异。

公开(公告)号：US4542110A

公开(公告)日：1985-09-17

申请号：US683679

申请日：1984-12-19

申请人： Takao Nakada ,  Mamoru Kamimura ,  Toranosuke Ashizawa

发明人： Takao Nakada ,  Mamoru Kamimura ,  Toranosuke Ashizawa

IPC分类号： C04B35/48 ,  C04B35/486 ,  G01N27/407 ,  G01N27/409 ,  H01B3/12 ,  H01M8/12

CPC分类号： G01N27/4073 ,  C04B35/486 ,  H01M8/1253 ,  Y02E60/525 ,  Y02P70/56

摘要： A zirconium oxide sintered body for an oxygen concentration sensor is produced by mixing 87.5 to 91.0% by weight of zirconium oxide powder, 8.5 to 12.3% by weight of yttrium oxide powder, 0.5% by weight or less of silicon oxide and 0.2 to 1.0% by weight of aluminum oxide, drying the resulting mixture, followed by sintering so as to make the cubic phase content in crystal phase of the resulting sintered body at ordinary temperatures 95% by weight or more. Said zirconium oxide sintered body is excellent in mechanical strength, thermal shock and ionic conductivity and can be used stably for a long period of time.

摘要翻译： 通过混合87.5〜91.0重量％的氧化锆粉末，8.5〜12.3重量％的氧化钇粉末，0.5重量％以下的氧化硅和0.2〜1.0重量％的氧化铝烧结体， 的氧化铝，干燥所得混合物，然后烧结，使所得烧结体的结晶相中的立方相含量在95重量％以上的常温下。 所述氧化锆烧结体的机械强度，热冲击和离子传导性优异，长时间稳定地使用。

公开(公告)号：US08162725B2

公开(公告)日：2012-04-24

申请号：US11878504

申请日：2007-07-25

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： B24B1/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 为了在不刮擦表面的情况下以高速率抛光SiO 2绝缘膜等的抛光目标表面，本发明提供了一种研磨剂，其包含包含介质的浆料，并分散在其中至少一个i）氧化铈颗粒，其由至少两个 微晶并且具有晶界或堆积密度不高于6.5g / cm 3，和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US08075800B2

公开(公告)日：2011-12-13

申请号：US10558406

申请日：2004-05-28

申请人： Naoyuki Koyama ,  Youichi Machii ,  Masato Yoshida ,  Masato Fukasawa ,  Toranosuke Ashizawa

发明人： Naoyuki Koyama ,  Youichi Machii ,  Masato Yoshida ,  Masato Fukasawa ,  Toranosuke Ashizawa

IPC分类号： C09K13/00 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1454

摘要： A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.

摘要翻译： 一种抛光浆料，其含有在其中的介质中分散四价金属氢氧化物颗粒的浆料和添加剂，其特征在于，添加剂是含有选自由通式（I）表示的单体组中的至少一种单体组分的聚合物， 和（II）（在通式（I）和（II）中，R 1表示氢，甲基，苯基，苯偶酰基，氯基，二氟甲基，三氟甲基或氰基， R2和R3表示氢或碳原子数1〜18的烷基链，羟甲基，乙酰基或二丙酰基，不包括氢的情况，R4表示吗啉代基，硫代吗啉基， 吡咯烷基或哌啶子基）。本发明提供了一种抛光浆料，其中颗粒形成具有待除去的抛光膜的化学反应层，其具有非常小的颗粒的机械作用并通过pa机械去除 d没有划痕，添加剂实现了高平面性。

公开(公告)号：US07708788B2

公开(公告)日：2010-05-04

申请号：US10960941

申请日：2004-10-12

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno ,  Yuuto Ootuki

IPC分类号： C09G1/02 ,  C09G1/04 ,  C09K3/14

CPC分类号： C09K3/1463 ,  C01F17/0043 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/02024 ,  H01L21/02065 ,  H01L21/31053

摘要： A cerium oxide abrasive slurry having, dispersed in a medium, cerium oxide particles whose primary particles have a median diameter of from 30 nm to 250 nm, a maximum particle diameter of 600 nm or smaller, and a specific surface area of from 7 to 45 m.2/g, and slurry particles have a median diameter of from 150 nm to 600 nm. The cerium oxide particles have structural parameter Y, representing an isotropic microstrain obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.01 to 0.70, and structural parameter X, representing a primary particle diameter obtained by an X-ray Rietveld method (with RIETAN-94), of from 0.08 to 0.3. The cerium oxide abrasive slurry is made by a method of obtaining particles by firing at a temperature of from 600° C. to 900° C. and then pulverizing, then dispersing the resulting cerium oxide particles in a medium.

摘要翻译： 一种分散在介质中的氧化铈磨料浆料，其一次粒子的中值粒径为30nm〜250nm，最大粒径为600nm以下，比表面积为7〜45μm m.2 / g，浆料颗粒的中值粒径为150nm〜600nm。 氧化铈颗粒具有结构参数Y，表示通过X射线Rietveld方法（用RIETAN-94）获得的各向同性微应变为0.01至0.70，结构参数X表示通过X射线获得的一次粒径 Rietveld法（含RIETAN-94）为0.08〜0.3。 通过在600℃〜900℃的温度下烧成而获得粒子的方法制造氧化铈研磨剂浆料，然后粉碎，然后将所得的氧化铈粒子分散在培养基中。

公开(公告)号：US20080271383A1

公开(公告)日：2008-11-06

申请号：US12170587

申请日：2008-07-10

申请人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

发明人： Masato Yoshida ,  Toranosuke Ashizawa ,  Hiroki Terazaki ,  Yuuto Ootuki ,  Yasushi Kurata ,  Jun Matsuzawa ,  Kiyohito Tanno

IPC分类号： C08J5/14 ,  C08K3/22

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.

摘要翻译： 本发明提供一种研磨剂，其包含含有介质的浆料，其中分散有i）至少一种，其中i） 由至少两个晶体构成并具有晶界或堆积密度不高于6.5g / cm 3的氧化铈颗粒和ii）具有孔的磨料颗粒。 还提供了一种抛光目标构件的方法以及利用该研磨剂制造半导体器件的方法。

公开(公告)号：US20060289826A1

公开(公告)日：2006-12-28

申请号：US10558406

申请日：2004-05-28

申请人： Naoyuki Koyama ,  Youichi Machii ,  Masato Yoshida ,  Masato Fukasawa ,  Toranosuke Ashizawa

发明人： Naoyuki Koyama ,  Youichi Machii ,  Masato Yoshida ,  Masato Fukasawa ,  Toranosuke Ashizawa

IPC分类号： C09K13/00 ,  H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1454

摘要： A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.

摘要翻译： 一种抛光浆料，其含有在其中的介质中分散四价金属氢氧化物颗粒的浆料和添加剂，其特征在于，添加剂是含有选自由通式（I）表示的单体组中的至少一种单体组分的聚合物， 和（II）（在通式（I）和（II）中，R 1表示氢，甲基，苯基，苯偶酰基，氯基，二氟甲基， 三氟甲基或氰基，R 2和R 3表示氢或具有1至18个碳原子的烷基链，羟甲基，乙酰基或二丙酰基 并且不包括氢的情况，R 4表示吗啉代基，硫代吗啉代基，吡咯烷基或哌啶子基）。本发明提供了一种研磨浆料，其中颗粒形成 具有用非常小的机械作用除去的抛光膜的化学反应层 颗粒和通过垫没有划痕的机械去除和添加剂实现高平坦度。