公开(公告)号：US20120187394A1

公开(公告)日：2012-07-26

申请号：US13352794

申请日：2012-01-18

申请人： Kaoru HATANO ,  Satoshi SEO ,  Yoshiaki OIKAWA

发明人： Kaoru HATANO ,  Satoshi SEO ,  Yoshiaki OIKAWA

IPC分类号： H01L31/167 ,  H01L31/0232 ,  H01L31/032

CPC分类号： H01L31/02162 ,  G02F1/133514 ,  G02F1/167 ,  G02F2001/13324 ,  G09G3/3208 ,  G09G3/344 ,  G09G2300/0426 ,  H01G9/2031 ,  H01G9/2059 ,  H01G9/2068 ,  H01L31/173 ,  Y02E10/542 ,  Y02E10/549

摘要： A light energy reuse type display device, light-emitting device, and lighting device with low power consumption, which efficiently convert light emitted from a light source (including light emission from a light-emitting element) into electric power, are provided. A photoelectric conversion element interposed between a pair of substrates functions as a color filter (a colored layer); thus, light emitted from a light source (including light emission from a light-emitting element) is efficiently converted into electric power, and a light energy reuse type display device, light-emitting device, and lighting device with low power consumption can be provided.

摘要翻译： 提供了一种能够将从光源发出的光（包括发光元件的发光）有效地转换为电力的，具有低功耗的光能再利用型显示装置，发光装置以及照明装置。 插入在一对基板之间的光电转换元件用作滤色器（着色层）; 因此，从光源发出的光（包括发光元件的发光）被有效地转换为电力，并且可以提供具有低功耗的光能再生型显示装置，发光装置和照明装置 。

公开(公告)号：US20090302456A1

公开(公告)日：2009-12-10

申请号：US12476491

申请日：2009-06-02

申请人： Yoshiaki OIKAWA ,  Hironobu SHOJI ,  Shingo EGUCHI

发明人： Yoshiaki OIKAWA ,  Hironobu SHOJI ,  Shingo EGUCHI

IPC分类号： H01L23/12 ,  H01L21/58

CPC分类号： H01L27/0248 ,  H01L23/60 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： To provide a simple method for manufacturing a semiconductor device in which deterioration in characteristics due to electrostatic discharge is reduced, a plurality of element layers each having a semiconductor integrated circuit and an antenna are sealed between a first insulator and a second insulator; a layered structure having a first conductive layer formed on a surface of the first insulator, the first insulator, the element layers, the second insulator, and a second conductive layer formed on a surface of the second insulator is formed; and the first insulator and the second insulator are melted, whereby the layered structure is divided so as to include at least one of the semiconductor integrated circuits and one of the antennas.

摘要翻译： 为了提供一种制造半导体器件的简单方法，其中由于静电放电引起的特性劣化减少，多个元件层各自具有半导体集成电路和天线被密封在第一绝缘体和第二绝缘体之间; 形成具有形成在第一绝缘体的表面上的第一导电层，第一绝缘体，元件层，第二绝缘体和形成在第二绝缘体的表面上的第二导电层的层状结构; 并且第一绝缘体和第二绝缘体熔化，由此将分层结构分割为包括至少一个半导体集成电路和天线中的一个。

公开(公告)号：US20110318881A1

公开(公告)日：2011-12-29

申请号：US13165063

申请日：2011-06-21

申请人： Akihiro CHIDA ,  Yoshiaki OIKAWA ,  Chiho KAWANABE

发明人： Akihiro CHIDA ,  Yoshiaki OIKAWA ,  Chiho KAWANABE

IPC分类号： H01L21/50

CPC分类号： H01L24/96 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L27/1262 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a method for manufacturing a semiconductor device, which prevents waste generation from being caused peeling of films and prevents failure of peeling from being caused by waste due to peeling of films. A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment.

摘要翻译： 提供一种制造半导体器件的方法，其防止废物产生被膜剥离，并防止由于剥离而导致的剥离不会导致剥离。 使用第一半导体基板，其具有其中在经受第一分割处理的部分中不形成剥离层的结构，使得当第二半导体基板上的剥离层不暴露在第二半导体基板的端面时 被切出第一半导体衬底。 另外，在对第二半导体衬底进行第二次分割处理之前，在要被剥离的第二半导体衬底的层上提供支撑材料。

公开(公告)号：US20110111557A1

公开(公告)日：2011-05-12

申请号：US12938527

申请日：2010-11-03

申请人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

发明人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

IPC分类号： H01L21/44

CPC分类号： H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

摘要翻译： 本发明的目的是高速驱动半导体器件或提高半导体器件的可靠性。 在半导体器件的制造方法中，其中在绝缘性的衬底上形成栅电极，在栅电极上形成栅极绝缘膜，并且在栅极绝缘膜上形成氧化物半导体膜，栅极 通过使用高密度等离子体的沉积处理形成绝缘膜。 因此，栅极绝缘膜中的悬挂键减少，并且栅极绝缘膜和氧化物半导体之间的界面的质量得到改善。