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公开(公告)号：US20090142882A1
公开(公告)日：2009-06-04
申请号：US12364698
申请日：2009-02-03
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译： 可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。 可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。 这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。
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公开(公告)号：US08062921B2
公开(公告)日：2011-11-22
申请号：US12364698
申请日：2009-02-03
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译： 可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。 可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。 这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。
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公开(公告)号：US07504675B2
公开(公告)日：2009-03-17
申请号：US11709520
申请日：2007-02-22
IPC分类号： H01L29/76
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译： 可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。 可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。 这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。
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公开(公告)号：US20080203376A1
公开(公告)日：2008-08-28
申请号：US11709520
申请日：2007-02-22
IPC分类号： H01L47/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译： 可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。 可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。 这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。
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公开(公告)号：US20110240943A1
公开(公告)日：2011-10-06
申请号：US13158565
申请日：2011-06-13
申请人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
发明人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
IPC分类号： H01L45/00
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译： 通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。 在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。
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26.发明授权公开(公告)号：US07129531B2
公开(公告)日：2006-10-31
申请号：US10442877
申请日：2003-05-21
IPC分类号： H01L27/10 , H01L29/73 , H01L29/74 , H01L29/768 , H01L27/148
CPC分类号： H01L45/144 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/16
摘要： A programmable resistance memory element comprising an adhesion layer between the programmable resistance material and at least one of the electrodes. Preferably, the adhesion layer is a titanium rich titanium nitride composition.
摘要翻译： 一种可编程电阻存储元件，包括在可编程电阻材料与至少一个电极之间的粘合层。 优选地，粘合层是富钛钛酸盐组合物。
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公开(公告)号：US08634226B2
公开(公告)日：2014-01-21
申请号：US13158565
申请日：2011-06-13
申请人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
发明人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译： 通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。 在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。
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公开(公告)号：US08098517B2
公开(公告)日：2012-01-17
申请号：US11981343
申请日：2007-10-31
申请人： Sergey A. Kostylev
发明人： Sergey A. Kostylev
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C2013/0073
摘要： Methods of programming a phase-change memory device that remedy device failure. The methods includes applying a sequence of two or more electrical energy pulses to the device, where the sequence of pulses includes positive polarity pulses and negative polarity pulses. In one method, two or more pulses of an initial polarity are applied and are followed by one or more pulses having opposite polarity. In another method, pulses of an initial polarity are repeatedly applied until the device fails and one or more pulses of opposite polarity are subsequently applied to restore the device to its initial performance. The pulses may be set pulses, reset pulses, or pulses that produce programmed states having a resistance intermediate between the set resistance and reset resistance of the device.
摘要翻译： 编程改变设备故障的相变存储器件的方法。 所述方法包括将两个或多个电能脉冲的序列应用于该装置，其中脉冲序列包括正极性脉冲和负极性脉冲。 在一种方法中，施加初始极性的两个或更多个脉冲，并且后跟一个或多个具有相反极性的脉冲。 在另一种方法中，重复施加初始极性的脉冲，直到器件发生故障，并且随后施加相反极性的一个或多个脉冲以将器件恢复到初始性能。 脉冲可以是产生编程状态的脉冲，复位脉冲或脉冲，其具有位于设备的设定电阻和复位电阻之间的电阻。
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公开(公告)号：US20090109737A1
公开(公告)日：2009-04-30
申请号：US11981343
申请日：2007-10-31
申请人： Sergey A. Kostylev
发明人： Sergey A. Kostylev
CPC分类号： G11C13/0069 , G11C13/0004 , G11C13/0033 , G11C16/3431 , G11C2013/0073
摘要： Methods of programming a phase-change memory device that remedy device failure. The methods includes applying a sequence of two or more electrical energy pulses to the device, where the sequence of pulses includes positive polarity pulses and negative polarity pulses. In one method, two or more pulses of an initial polarity are applied and are followed by one or more pulses having opposite polarity. In another method, pulses of an initial polarity are repeatedly applied until the device fails and one or more pulses of opposite polarity are subsequently applied to restore the device to its initial performance. The pulses may be set pulses, reset pulses, or pulses that produce programmed states having a resistance intermediate between the set resistance and reset resistance of the device.
摘要翻译： 编程改变设备故障的相变存储器件的方法。 所述方法包括将两个或多个电能脉冲的序列应用于该装置，其中脉冲序列包括正极性脉冲和负极性脉冲。 在一种方法中，施加初始极性的两个或更多个脉冲，并且后跟一个或多个具有相反极性的脉冲。 在另一种方法中，重复施加初始极性的脉冲，直到器件发生故障，并且随后施加相反极性的一个或多个脉冲以将器件恢复到初始性能。 脉冲可以是产生编程状态的脉冲，复位脉冲或脉冲，其具有位于设备的设定电阻和复位电阻之间的电阻。
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公开(公告)号：US07990761B2
公开(公告)日：2011-08-02
申请号：US12080001
申请日：2008-03-31
申请人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
发明人： George Gordon , Semyon D. Savransky , Ward Parkinson , Sergey A. Kostylev , James Reed , Tyler Lowrey , Ilya V. Karpov , Gianpaolo Spadini
IPC分类号： G11C11/00
CPC分类号： G11C13/0033 , G11C8/10 , G11C11/5678 , G11C13/0004 , G11C13/003 , G11C13/0035 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C16/3431 , G11C29/04 , G11C2013/0052 , G11C2013/0078 , G11C2013/0092 , G11C2213/76
摘要： Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.
摘要翻译： 通过在对相变存储器中的复位状态进行编程时产生基本上不含结晶核的非晶相，可以减小从复位到设定状态的干扰。 在一些实施例中，这可以通过使用超过相变存储元件的阈值电压的电流或电压来实现，但不超过将导致干扰的安全电流电压来实现。
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