公开(公告)号：US20140218724A1

公开(公告)日：2014-08-07

申请号：US13757099

申请日：2013-02-01

Applicant: Steven W. Meeks ,  Rusmin Kudinar ,  Hung P. Nguyen

Inventor： Steven W. Meeks ,  Rusmin Kudinar ,  Hung P. Nguyen

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/94 ,  G01N21/9505 ,  G01N21/956 ,  G01N21/958

Abstract: An optical inspector includes a radiating source, a time varying beam reflector, a telecentric scan lens, a separating minor, and a first and second detector. The radiating source is configured to irradiate a first position on the time varying beam reflector with a source beam. The time varying beam reflector directs the source beam to the telecentric scan lens, which in turn directs the source beam to a sample. The telecentric scan lens directs specular reflection and near specular scattered radiation to the time varying beam reflector. The specular reflection is directed by the separating mirror to the first detector. The near specular scattered radiation is not reflected by the separating minor and propagates to the second detector. In response, the optical inspector determines the total reflectivity, the surface slope, or the near specular scattered radiation intensity of the sample.

Abstract translation: 光学检查器包括辐射源，时变光束反射器，远心扫描透镜，分离光和第一和第二检测器。 辐射源被配置成用源光束照射时变光束反射器上的第一位置。 时变光束反射器将源光束引导到远心扫描透镜，然后将远光扫描透镜引导到源样品。 远心扫描透镜将镜面反射和近镜面散射辐射引导到时变光束反射器。 镜面反射由分离镜引导到第一检测器。 近镜面散射的辐射不会被分离的小分子反射并传播到第二个检测器。 作为响应，光学检查器确定样品的总反射率，表面斜率或近镜面散射辐射强度。

公开(公告)号：US20120049085A1

公开(公告)日：2012-03-01

申请号：US12861894

申请日：2010-08-24

Applicant: Roman Sappey ,  Steven W. Meeks

Inventor： Roman Sappey ,  Steven W. Meeks

IPC: G01J1/58 ,  G01N21/55 ,  G01J3/00 ,  G01N21/00

CPC classification number: G01J3/36 ,  G01J3/4412 ,  G01N21/6489 ,  G01N21/9501

Abstract: A system for defect detection and photoluminescence measurement of a sample may include a radiation source configured to target radiation to the sample. The system may also include an optics assembly positioned above the sample to receive a sample radiation. The system may also include a filter module configured to receive the sample radiation collected by the optics assembly. The filter module may separate the sample radiation collected by the optics assembly into a first radiation portion and a second radiation portion. The system may also include a defect detection module configured to receive the first radiation portion from the filter module. The system may further include a photoluminescence measurement module configured to receive the second radiation portion from the filter module. The defect detection module and the photoluminescence measurement module may be configured to receive the respective first radiation portion and the second radiation portion substantially simultaneously.

Abstract translation: 用于样品的缺陷检测和光致发光测量的系统可以包括被配置为将辐射靶向样品的辐射源。 该系统还可以包括位于样品上方以接收样品辐射的光学组件。 该系统还可以包括被配置为接收由光学组件收集的样品辐射的滤波器模块。 过滤器模块可以将由光学组件收集的样品辐射分离成第一辐射部分和第二辐射部分。 该系统还可以包括被配置为从过滤器模块接收第一辐射部分的缺陷检测模块。 该系统可以进一步包括光致发光测量模块，其被配置为从过滤器模块接收第二辐射部分。 缺陷检测模块和光致发光测量模块可以被配置为基本上同时地接收相应的第一辐射部分和第二辐射部分。

公开(公告)号：US07554654B2

公开(公告)日：2009-06-30

申请号：US11627677

申请日：2007-01-26

Applicant: Steven W. Meeks ,  Romain Sappey ,  Tom Carr

Inventor： Steven W. Meeks ,  Romain Sappey ,  Tom Carr

IPC: G01N21/00

CPC classification number: G01B11/306 ,  G01N21/9501 ,  G01N21/9503

Abstract: In one embodiment, a system to measure defects on a surface of a wafer and an edge of the wafer using a single tool comprises a scatterometer to identify at least one defect region on the surface and a surface profile height measuring tool to measure one or more characteristics of the surface in the defect region with a surface profile height measuring tool.

Abstract translation: 在一个实施例中，使用单个工具测量晶片表面和晶片边缘上的缺陷的系统包括用于识别表面上的至少一个缺陷区域的散射仪和用于测量一个或多个 具有表面轮廓高度测量工具的缺陷区域中的表面特征。

公开(公告)号：US07345751B2

公开(公告)日：2008-03-18

申请号：US11268215

申请日：2005-11-07

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01N21/00

CPC classification number: G01B11/0616 ,  G01N21/9501

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer. The system includes a processor for determining height. In addition to measuring the height the system can measure film thickness and defects through the measurement of the phase shift of optical signals. An optical profilometer is described which can measure topography on thin film disks, optical substrates or silicon wafers and whose output is independent of the reflectivity of the substrate. This material independent optical profilometer uses a retro-reflector to achieve reflectivity independence and to increase the height sensitivity to 8 times the height of the surface. The reflectivity independent optical profilometer achieves perfect cancellation of the slope of the surface while measuring the topography of the substrate.

Abstract translation: 用于测量薄膜盘或硅晶片的缺陷，膜厚度，污染物，颗粒和高度的系统和方法。 该系统包括用于确定高度的处理器。 除测量高度之外，系统可以通过测量光信号的相移来测量膜厚度和缺陷。 描述了可以测量薄膜盘，光学衬底或硅晶片上的形貌并且其输出与衬底的反射率无关的光学轮廓仪。 该材料独立的光学轮廓仪使用后向反射镜实现反射率独立性，并将高度灵敏度提高到表面高度的8倍。 反射率独立的光学轮廓仪在测量衬底的形貌的同时实现了表面斜率的完美消除。

公开(公告)号：US07113284B1

公开(公告)日：2006-09-26

申请号：US10890774

申请日：2004-07-13

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01N21/84

CPC classification number: G01B11/0616 ,  H01L22/12

Abstract: Embodiments of a material independent optical profilometer are described. In some embodiments, a system comprises a first source of electromagnetic signals, a beam splitter, first and second retroreflection units, first and second detectors, and a processor that receives signals reflected from an object and generates a material independent signal.

Abstract translation: 描述了材料无关的光学轮廓仪的实施例。 在一些实施例中，系统包括第一电磁信号源，分束器，第一和第二回射单元，第一和第二检测器以及接收从物体反射的信号并产生材料无关信号的处理器。

公开(公告)号：US07061601B2

公开(公告)日：2006-06-13

申请号：US10754275

申请日：2004-01-08

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01N21/00

CPC classification number: G01N21/9506 ,  G01B11/0616 ,  G01B11/0641 ,  G01B11/065 ,  G01B11/303 ,  G01B11/306 ,  G01N21/21 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/958 ,  G01N2021/8427 ,  G01N2021/8841 ,  G01N2201/103 ,  G01N2201/104 ,  G01N2201/1045 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A double-sided optical inspection system is presented which may detect and classify particles, pits and scratches on thin film disks or wafers in a single scan of the surface. In one embodiment, the invention uses a pair of orthogonally oriented laser beams, one in the radial and one in the circumferential direction on both surfaces of the wafer or thin film disk. The scattered light from radial and circumferential beams is separated via their polarization or by the use of a dichroic mirror together with two different laser wavelengths.

Abstract translation: 提出了一种双面光学检测系统，其可以在表面的单次扫描中检测和分类薄膜盘或晶片上的颗粒，凹坑和划痕。 在一个实施例中，本发明使用一对正交取向的激光束，一个在径向上，一个在圆周方向上在晶片或薄膜盘的两个表面上。 来自径向和周向光束的散射光通过其偏振分离，或者通过使用二向色镜与两种不同的激光波长分离。

公开(公告)号：US06897957B2

公开(公告)日：2005-05-24

申请号：US10029957

申请日：2001-12-21

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01B11/06 ,  G01B11/30 ,  G01N21/95 ,  G01N21/956 ,  G11B5/84 ,  H01L21/66 ,  G01N21/84

CPC classification number: G01B11/0616 ,  G01B11/306 ,  H01L22/12

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer. The system includes a processor for determining height. In addition to measuring the height the system can measure film thickness and defects through the measurement of the phase shift of optical signals. An optical profilometer is described which can measure topography on thin film disks, optical substrates or silicon wafers and whose output is independent of the reflectivity of the substrate. This material independent optical profilometer uses a retro-reflector to achieve reflectivity independence and to increase the height sensitivity to 8 times the height of the surface. The reflectivity independent optical profilometer achieves perfect cancellation of the slope of the surface while measuring the topography of the substrate.

Abstract translation: 用于测量薄膜盘或硅晶片的缺陷，膜厚度，污染物，颗粒和高度的系统和方法。 该系统包括用于确定高度的处理器。 除测量高度之外，系统可以通过测量光信号的相移来测量膜厚度和缺陷。 描述了可以测量薄膜盘，光学衬底或硅晶片上的形貌并且其输出与衬底的反射率无关的光学轮廓仪。 该材料独立的光学轮廓仪使用后向反射镜实现反射率独立性，并将高度灵敏度提高到表面高度的8倍。 反射率独立的光学轮廓仪在测量衬底的形貌的同时实现了表面斜率的完美消除。

公开(公告)号：US06757056B1

公开(公告)日：2004-06-29

申请号：US09861280

申请日：2001-05-18

Applicant: Steven W. Meeks ,  Rusmin Kudinar

Inventor： Steven W. Meeks ,  Rusmin Kudinar

IPC: G01N2100

CPC classification number: G01B11/0616 ,  G01N21/211 ,  G01N21/94 ,  G01N21/9501 ,  H01L22/12

Abstract: A system and method for measuring defects, film thickness, contamination, particles and height of a thin film disk or a silicon wafer.

Abstract translation: 用于测量薄膜盘或硅晶片的缺陷，膜厚度，污染物，颗粒和高度的系统和方法。

公开(公告)号：US06198533B1

公开(公告)日：2001-03-06

申请号：US09376711

申请日：1999-08-17

Applicant: Steven W. Meeks ,  Rusmin Kudinar ,  Ronny Soetarman

Inventor： Steven W. Meeks ,  Rusmin Kudinar ,  Ronny Soetarman

IPC: G01B2117

CPC classification number: G01B11/065 ,  G01B11/303

Abstract: A system and method for measuring lubricant thickness and degradation, carbon wear and carbon thickness, and surface roughness and debris on thin film magnetic disks at angles that are not substantially Brewster's angle of the thin film (carbon) protective overcoat in a high temperature environment. A focused optical light whose polarization can be switched between P or S polarization is incident at an angle to the surface of the thin film magnetic disk. The polarization switch can be accomplished using a temperature compensated quartz half plate. The range of angles can be from zero degrees from normal to near Brewster's angle and from an angle greater than Brewster's angle to 90 degrees. This range of angles allows the easy measurement of the change in lubricant thickness due to the interaction of the thin film head, the absolute lubricant thickness and degradation of the lubricant. It also allows the measurement of changes in carbon thickness and the absolute carbon thickness. The surface roughness can also be measured at any of the angles specified above.

Abstract translation: 用于测量薄膜磁盘上的润滑剂厚度和降解，碳磨损和碳厚度的表面粗糙度和碎屑的系统和方法，其在高温环境中基本上不是薄膜（碳）保护涂层的布鲁斯特角。 其偏振可以在P或S偏振之间切换的聚焦光学光以与薄膜磁盘的表面成一定角度入射。 偏光开关可以使用温度补偿的石英半板完成。 角度范围可以从普通到布鲁斯特角附近的零度以及从布鲁斯特角度大到90度的角度。 这种角度范围可以容易地测量润滑剂厚度的变化，这是由于薄膜头的相互作用，绝对润滑剂厚度和润滑剂的劣化。 它还允许测量碳厚度和绝对碳厚度的变化。 表面粗糙度也可以在上述任何角度测量。

公开(公告)号：US5586040A

公开(公告)日：1996-12-17

申请号：US419885

申请日：1995-04-11

Applicant: Peter M. Baumgart ,  Christopher S. Gudeman ,  Douglas J. Krajnovich ,  Steven W. Meeks ,  Thao A. Nguyen ,  Fior D. Sargent ,  Andrew C. Tam ,  Gerard H. Vurens

Inventor： Peter M. Baumgart ,  Christopher S. Gudeman ,  Douglas J. Krajnovich ,  Steven W. Meeks ,  Thao A. Nguyen ,  Fior D. Sargent ,  Andrew C. Tam ,  Gerard H. Vurens

IPC: G11B5/60 ,  G11B5/82 ,  G11B5/84 ,  G11B33/10 ,  G06F19/00 ,  B05D3/06

CPC classification number: G11B5/8408 ,  G11B5/82 ,  G11B5/8404 ,  G11B33/10 ,  G11B5/6011

Abstract: Controlled laser texturing of a magnetic recording disk is accomplished by use of a textured test band on the disk and an analyzing laser system to provide feedback to the texturing laser. The analyzing laser system determines, from diffracted laser light, the average height of the laser-induced bumps formed in the test band by the texturing laser. The analyzing laser beam is directed to the substrate surface and overlaps a group of individual bumps formed in a repetitive pattern. A scanning linear photodector array receives light diffracted from the surface. The digitized output of the array is the angular distribution of diffracted light intensities and is used to compute the average height of the bumps in the test band. The disk is then translated radially so that the texturing laser is aligned with the region of the disk where the textured landing zone is to be placed. Then, in response to the computed value of average bump height in the test band, a correction signal or signals is output to modify one or more parameters of the texturing laser so that the texturing laser can form bumps of the correct average height in the textured landing zone.

Abstract translation: 通过使用磁盘上的纹理测试带和分析激光系统来对纹理激光器提供反馈来实现磁记录盘的受控激光纹理化。 分析激光系统通过衍射激光确定通过纹理激光在测试带中形成的激光诱发凸块的平均高度。 分析激光束被引导到衬底表面并与重复形成的一组单独的凸块重叠。 扫描线性光电二极管阵列接收从表面衍射的光。 阵列的数字化输出是衍射光强度的角度分布，用于计算测试带中的凸块的平均高度。 然后盘被径向地转动，使得纹理化激光与要被放置纹理着色区的盘的区域对齐。 然后，响应于测试频带中的平均凸块高度的计算值，输出校正信号或信号以修改纹理化激光器的一个或多个参数，使得纹理化激光器可以形成纹理中正确平均高度的凸起 着陆区。