公开(公告)号：US20090073859A1

公开(公告)日：2009-03-19

申请号：US12155896

申请日：2008-06-11

Applicant: Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

Inventor： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

IPC: G11B3/00

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

Abstract translation: 提供信息存储装置及其制造方法。 信息存储装置的磁道包括其中至少一个磁畴形成区域和至少一个磁畴壁形成区域沿长度方向交替布置的磁性层。 所述至少一个磁畴形成区域相对于所述至少一个磁畴壁形成区域具有不同的磁各向异性能量。 中间层形成在磁性层下面。 中间层包括至少一个第一材料区域和至少一个第二材料区域。 所述至少一个第一材料区域和所述至少一个第二材料区域中的每一个对应于所述至少一个磁畴形成区域和所述至少一个磁畴壁形成区域中的一个。

公开(公告)号：US20080171243A1

公开(公告)日：2008-07-17

申请号：US12007269

申请日：2008-01-08

Applicant: Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jin-goo Ahn

Inventor： Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jin-goo Ahn

IPC: H01M8/06

CPC classification number: H01M8/0631 ,  C01B3/384 ,  C01B7/093 ,  C01B7/096 ,  C01B9/04 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/085 ,  C01B2203/0866 ,  C01B2203/1023 ,  C01B2203/1035 ,  C01B2203/1041 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1076 ,  C01B2203/1247 ,  C01B2203/1288 ,  C01B2203/1604 ,  H01M8/04223 ,  H01M8/04225 ,  H01M8/04302

Abstract: The present invention relates to a reaction vessel for fuel cells, and more particular to a reaction vessel capable of obtaining reaction temperature promptly at the time of initial operation and a reaction device to form a reforming device of the fuel cell using the same. The reaction device of the present invention includes a reaction vessel that includes a monolithic chain. The monolithic chain has a first wall, a second wall, and a layer of pleats interposed between the first wall and the second wall. A plurality of openings are formed on each of the top side and the bottom side of the monolithic chain. One of the first wall and the second wall being made of an insulating material. The layer of pleats is made of a conductive material, and electric power is applied to generate heat at initial reaction operation. Once the reaction is activated, the reaction vessel produces heat through an oxidation reaction.

Abstract translation: 本发明涉及一种用于燃料电池的反应容器，更具体地涉及能够在初始运转时迅速获得反应温度的反应容器和形成使用该燃料电池的燃料电池的重整装置的反应装置。 本发明的反应装置包括具有单片链的反应容器。 整体式链条具有第一壁，第二壁和介于第一壁和第二壁之间的褶皱层。 在单片链的顶侧和底侧的每一个上形成多个开口。 第一壁和第二壁之一由绝缘材料制成。 褶皱层由导电材料制成，并且在初始反应操作时施加电力以产生热量。 一旦反应被激活，反应容器通过氧化反应产生热量。

公开(公告)号：US20080107938A1

公开(公告)日：2008-05-08

申请号：US11890023

申请日：2007-08-03

Applicant: Chan-ho Lee ,  Ju-yong Kim ,  Jin-goo Ahn ,  Yong-kul Lee ,  Man-seok Han ,  Sung-chul Lee ,  Ho-jun Yoon

Inventor： Chan-ho Lee ,  Ju-yong Kim ,  Jin-goo Ahn ,  Yong-kul Lee ,  Man-seok Han ,  Sung-chul Lee ,  Ho-jun Yoon

IPC: H01M8/18

CPC classification number: B01J19/2475 ,  B01J8/025 ,  B01J8/0257 ,  B01J8/0285 ,  B01J12/007 ,  B01J2208/00203 ,  B01J2208/00407 ,  B01J2208/00415 ,  B01J2208/00504 ,  B01J2208/0053 ,  C01B3/384 ,  C01B3/48 ,  C01B2203/0233 ,  C01B2203/0244 ,  C01B2203/0261 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/0816 ,  C01B2203/0822 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1082 ,  C01B2203/1223 ,  C01B2203/1229 ,  C01B2203/1241 ,  C01B2203/1247 ,  H01M8/04022 ,  H01M8/0631 ,  Y02P20/128 ,  Y02P70/56 ,  Y10T29/49108

Abstract: A reforming reaction unit for a reformer, and a method of manufacturing the same are disclosed. One embodiment of the reforming reaction unit includes: a cylindrical structure having a hollow space inside thereof; a cover surrounding the outer surface of the cylindrical structure; and a disc plate having a plurality of holes and directly contacting the inner surface of the cover at a predetermined position of the cylindrical structure in a lengthwise direction. The cylindrical structure includes an upper part above the disc plate. The upper part has a thread formed on its outer surface. The thread is in direct contact with the inner surface of the cover. The cylindrical structure also includes a lower part below the disc plate. The lower part has an outer surface spaced apart from the inner surface of the cover.

Abstract translation: 公开了一种用于重整器的重整反应单元及其制造方法。 重整反应单元的一个实施方案包括：在其内部具有中空空间的圆柱形结构; 围绕所述圆柱形结构的外表面的盖; 以及具有多个孔的盘片，并且在长度方向上在圆柱形结构的预定位置处直接接触盖的内表面。 圆柱形结构包括盘片上方的上部。 上部具有形成在其外表面上的螺纹。 螺纹与盖的内表面直接接触。 圆柱形结构还包括盘片下方的下部。 下部具有与盖的内表面间隔开的外表面。

公开(公告)号：US09530478B2

公开(公告)日：2016-12-27

申请号：US14162144

申请日：2014-01-23

Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

IPC: G11C11/00 ,  G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  G11C11/18

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/18 ,  H01L27/222 ,  H01L43/08

Abstract: A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.

Abstract translation: 使用旋转门厅效应的存储器件以及制造和操作存储器件的方法包括将第一工作电流施加到存储器件的位线，使得自旋电流被施加到耦合到磁性隧道结（MTJ）的单元 由于位线中的材料而导致位线，其中位线经由MTJ单元电连接到字线，并且字线与位线相交。

公开(公告)号：US08847692B2

公开(公告)日：2014-09-30

申请号：US13174932

申请日：2011-07-01

Applicant: Ung-hwan Pi ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Kwang-seok Kim ,  Sung-chul Lee

Inventor： Ung-hwan Pi ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Kwang-seok Kim ,  Sung-chul Lee

IPC: H03B15/00

CPC classification number: H03B15/006

Abstract: Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.

Abstract translation: 提供了振荡器及其操作方法，所述振荡器包括磁性层和构造成固定磁性层的磁化方向的磁化固定元件。 振荡器通过使用磁性层的磁矩的进动来产生信号。

公开(公告)号：US08803266B2

公开(公告)日：2014-08-12

申请号：US13313361

申请日：2011-12-07

Applicant: Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

Inventor： Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

IPC: H01L29/72

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

Abstract: A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.

Abstract translation: 磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。 自由磁性层具有响应于自旋电流而可切换的磁化方向。 自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。

公开(公告)号：US08598957B2

公开(公告)日：2013-12-03

申请号：US13208061

申请日：2011-08-11

Applicant: Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

IPC: H03B1/00 ,  H01L29/82 ,  B32B7/02

CPC classification number: H03B15/006 ,  H01L27/22

Abstract: Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.

Abstract translation: 提供振荡器和制造和操作振荡器的方法，所述振荡器包括具有可变磁化方向的基底自由层和在所述基底自由层上的至少一个振荡单元。 振荡单元可以包括与基底自由层接触并具有小于基底自由层的宽度的自由层元件，与自由层元件分离的钉扎层元件，以及在自由层元件和 固定层元素。 多个振荡单元可以布置在基底自由层上。

公开(公告)号：US08537506B2

公开(公告)日：2013-09-17

申请号：US12801712

申请日：2010-06-22

Applicant: Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

Inventor： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

IPC: G11B5/39

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

Abstract: An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

Abstract translation: 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

公开(公告)号：US20120038428A1

公开(公告)日：2012-02-16

申请号：US12929388

申请日：2011-01-20

Applicant: Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

Inventor： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim ,  Ho-jung Kim ,  Hyun-sik Choi

IPC: H03B5/02

CPC classification number: H03B15/006

Abstract: Oscillators and a method of operating the same are provided, the oscillators include at least one oscillation device including a first magnetic layer having a magnetization direction that is variable, a second magnetic layer having a pinned magnetization direction, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer. The oscillation device is configured to generate a signal having a set frequency. The oscillators further include a driving transistor having a drain connected to the at least one oscillation device, and a gate to which a control signal for controlling driving of the oscillation device is applied.

Abstract translation: 提供了振荡器及其操作方法，所述振荡器包括至少一个振荡器件，该振荡器件包括具有可变磁化方向的第一磁性层，具有钉扎​​磁化方向的第二磁性层和设置在第二磁性层之间的非磁性层 第一磁性层和第二磁性层。 振荡装置被配置为产生具有设定频率的信号。 振荡器还包括具有连接到至少一个振荡装置的漏极的驱动晶体管，以及施加用于控制振荡装置的驱动的控制信号的栅极。

公开(公告)号：US20110080221A1

公开(公告)日：2011-04-07

申请号：US12801710

申请日：2010-06-22

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Kwang-seok Kim ,  Ji-young Bae

IPC: H03B28/00

CPC classification number: H03B15/006

Abstract: An oscillator includes: a plurality of free layers and a non-magnetic layer disposed between the plurality of free layers. Each of the plurality of free layers has perpendicular magnetic anisotropy or in-plane magnetic anisotropy. Magnetization directions of the free layers are periodically switched such that a signal within a given frequency band oscillates.

Abstract translation: 振荡器包括：多个自由层和设置在多个自由层之间的非磁性层。 多个自由层中的每一个具有垂直的磁各向异性或面内磁各向异性。 定期切换自由层的磁化方向，使给定频带内的信号振荡。