公开(公告)号：US09805913B2

公开(公告)日：2017-10-31

申请号：US14727957

申请日：2015-06-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Nai-Han Cheng ,  Chi-Ming Yang ,  Chin-Hsiang Lin

IPC: H01J37/317 ,  H01L21/687 ,  H01L21/265 ,  H01J37/302 ,  H01J37/147 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3172 ,  H01J2237/12 ,  H01J2237/20228 ,  H01J2237/30477 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764

Abstract: A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

公开(公告)号：US20170018445A1

公开(公告)日：2017-01-19

申请号：US14798661

申请日：2015-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Nai-Han Cheng ,  Chi-Ming Yang

IPC: H01L21/67 ,  G01B11/14 ,  G01B11/24 ,  H01L25/065 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00 ,  G01B11/16 ,  H01L21/66

CPC classification number: H01L21/67288 ,  G01B11/14 ,  G01B11/161 ,  G01B11/2441 ,  H01L21/76898 ,  H01L22/12 ,  H01L22/20 ,  H01L23/562 ,  H01L24/11 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/1146 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2224/11 ,  H01L2924/014

Abstract: The present disclosure relates to a method of bump metrology that relies upon advanced process control (APC) to provide substrate warpage parameters describing a warpage of a substrate to a bump metrology module to improve focus of the bump metrology module. In some embodiments, the method measures one or more substrate warpage parameters of a semiconductor substrate. An initial focal height of a lens of a bump metrology module is calculated based upon the measured substrate warpage parameters. The lens of the bump metrology module is then placed at the initial focal height, and height and critical dimensions of a plurality of bumps on the semiconductor substrate are subsequently measured using the lens. By providing the substrate warpage parameters to the bump metrology module, the bump metrology module can use real-time process control to account for wafer warpage, thereby improving throughput and yield.

Abstract translation: 本公开涉及一种凸块计量的方法，其依赖于先进的过程控制（APC）来提供衬底翘曲参数，以将衬底翘曲描述到凸块计量模块以改善凸块计量模块的焦点。 在一些实施例中，该方法测量半导体衬底的一个或多个衬底翘曲参数。 基于测量的基板翘曲参数计算凸块计量模块的透镜的初始焦点高度。 然后将凸块计量模块的透镜放置在初始焦点高度处，随后使用透镜测量半导体衬底上的多个凸块的高度和临界尺寸。 通过向凸块计量模块提供基板翘曲参数，凸块计量模块可以使用实时过程控制来解决晶片翘曲，从而提高生产量和产量。