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77 条记录 (耗时 0.028 秒)

    Resist composition and patterning process
    21.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06869748B2

    公开(公告)日：2005-03-22

    申请号：US10611881

    申请日：2003-07-03

    申请人： Takanobu Takeda ,  Osamu Watanabe

    发明人： Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03F7/027 ,  C08F20/26 ,  C08F212/04 ,  G03F7/039 ,  H01L21/027 ,  G03F7/004

    CPC分类号： G03F7/0392 ,  Y10S430/118 ,  Y10S430/143

    摘要： Resist compositions comprising as the base resin a polymer using an alkoxyalkyl (meth)acrylate as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a practical level of shelf stability, a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution over a wide baking temperature range. The compositions are best suited as a chemically amplified positive resist material for micropatterning in the manufacture of VLSI.

    摘要翻译： 包含作为基础树脂的抗蚀剂组合物使用（甲基）丙烯酸烷氧基烷基酯作为反应性基团的聚合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括实际的贮存稳定性水平，显着提高碱的对比度 曝光前后的溶出速率，高灵敏度，以及较宽的烘烤温度范围内的高分辨率。 该组合物最适合用作VLSI制造中用于微图案化学的化学放大正性抗蚀剂材料。

    Self-assembling polymer film material, self-assembled pattern, and pattern forming method
    27.
    发明申请
    Self-assembling polymer film material, self-assembled pattern, and pattern forming method 审中-公开
    自组装聚合物膜材料，自组装图案和图案形成方法

    公开(公告)号：US20070219338A1

    公开(公告)日：2007-09-20

    申请号：US11717136

    申请日：2007-03-13

    申请人： Takanobu Takeda ,  Osamu Watanabe

    发明人： Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： C08G63/00

    CPC分类号： C09D125/18 ,  C08F12/24 ,  C08F293/005 ,  C08F297/00 ,  C08F297/02 ,  C08F297/026 ,  C08L53/00 ,  C08L2666/02

    摘要： A self-assembling polymer film material comprising a polymer comprising recurring hydroxystyrene units and having a Mw of up to 20,000 is provided. When a polymer comprising hydroxystyrene units is used in the form of a block copolymer or a blend with another polymer, the material is capable of self-assembling to form a pattern of microdomain structure having a size of up to 20 nm that is difficult to achieve with prior art block copolymers.

    摘要翻译： 提供了一种自组装聚合物膜材料，其包含包含重复羟基苯乙烯单元并且具有高达20,000的Mw的聚合物。 当包含羟基苯乙烯单元的聚合物以嵌段共聚物的形式或与另一种聚合物的共混物的形式使用时，该材料能够自组装形成具有高达20nm的尺寸的难以实现的微区结构图案 与现有技术的嵌段共聚物。

    Resist composition and patterning process
    28.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US07267923B2

    公开(公告)日：2007-09-11

    申请号：US10852157

    申请日：2004-05-25

    申请人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    发明人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0392 ,  G03F7/0397

    摘要： Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

    摘要翻译： 包含作为基础树脂的具有烷氧基异丁氧基作为反应性基团的聚合物的抗蚀剂组合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括显着提高曝光前后碱溶解速率的对比度，高灵敏度和 高分辨率的精细特征尺寸区域。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。

    RESIST COMPOSITION AND PATTERNING PROCESS
    29.
    发明申请
    RESIST COMPOSITION AND PATTERNING PROCESS 有权
    耐腐蚀组合物和方法

    公开(公告)号：US20070148584A1

    公开(公告)日：2007-06-28

    申请号：US10852157

    申请日：2004-05-25

    申请人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    发明人： Takanobu Takeda ,  Osamu Watanabe ,  Daisuke Manba

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0392 ,  G03F7/0397

    摘要： Resist compositions comprising as the base resin a polymer having alkoxyisobutoxy as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in fine feature size regions. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.

    摘要翻译： 包含作为基础树脂的具有烷氧基异丁氧基作为反应性基团的聚合物的抗蚀剂组合物，其在酸的作用下可分解以增加在碱中的溶解度，其优点包括显着提高曝光前后碱溶解速率的对比度，高灵敏度和 高分辨率的精细特征尺寸区域。 组合物最适合用作VLSI制造中的微图案化学放大抗蚀剂材料。

    Resist composition and patterning process
    30.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US07232638B2

    公开(公告)日：2007-06-19

    申请号：US10427939

    申请日：2003-05-02

    申请人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/0397

    摘要： Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.

    摘要翻译： 包含通过使含硅单体与LogP或cLogP值高达0.6的极性单体和任选的羟基苯乙烯，光酸产生剂和有机溶剂共聚获得的聚合物的化学扩增的正性抗蚀剂组合物对高能辐射敏感， 在小于300nm的波长下具有高灵敏度和分辨率，并且改善了耐氧等离子体蚀刻的耐受性。