公开(公告)号：US20080122933A1

公开(公告)日：2008-05-29

申请号：US11812219

申请日：2007-06-15

申请人： Jin Murayama

发明人： Jin Murayama

IPC分类号： H04N5/33

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14837 ,  H01L27/14887 ,  H04N5/33 ,  H04N5/332 ,  H04N2209/045

摘要： A solid-state imaging device has a single plate structure and is capable of imaging of visible light and infrared light. While imaging of the visible light and the infrared light is performed by the imaging device every one-frame scanning period, an IR pulse is emitted, every other one-frame scanning period, to a space to be shot. A visible-light image is produced every one-frame scanning period. A range image from which influence to be caused by infrared component of the ambient light is removed is produced every other one-frame scanning period by subtracting an IR pixel image (S2IR), which is obtained by imaging of non-emission time of the IR pulse, from an IR pixel signal (S1IR), which is obtained by imaging of emission time of the IR pulse.

摘要翻译： 固态成像装置具有单板结构，并且能够对可见光和红外光进行成像。 当通过成像装置在每一帧扫描周期执行可见光和红外光的成像时，每隔一个一帧扫描周期将IR脉冲发射到待拍摄的空间。 每一帧扫描周期产生可见光图像。 通过减去通过将非发光时间的成像获得的IR像素图像（S 2 IR），每隔一个一帧扫描周期，产生从环境光的红外分量引起的影响的范围图像 IR脉冲，通过对IR脉冲的发射时间进行成像而获得的IR像素信号（S 1 IR）。

公开(公告)号：US07365379B2

公开(公告)日：2008-04-29

申请号：US11150182

申请日：2005-06-13

申请人： Jin Murayama ,  Tatsuya Hagiwara

发明人： Jin Murayama ,  Tatsuya Hagiwara

IPC分类号： H01L29/72

CPC分类号： A61B1/05 ,  A61B1/053 ,  A61B1/2736 ,  H01L27/14843

摘要： A solid state image pickup device includes: a first area defined on a principal surface of a semiconductor substrate; a second area defined in an area adjacent to the first area along a first direction; and a third area defined in an area adjacent to the second area along the first direction, wherein the first area includes: a plurality of photoelectric conversion elements; and a plurality of vertical transfer channels formed adjacent to the plurality of photoelectric conversion elements; the second area includes: a horizontal transfer channel; and a floating diffusion region and a first stage drive FET of an amplifier; and the third area includes: a first state load FET, a second stage drive FET, a second stage load FET, a third stage drive FET and a third stage load FET, respectively of the amplifier. The solid state image pickup device can be made compact.

摘要翻译： 固态摄像装置包括：限定在半导体衬底的主表面上的第一区域; 限定在沿着第一方向与所述第一区域相邻的区域中的第二区域; 以及沿着所述第一方向在与所述第二区域相邻的区域中限定的第三区域，其中所述第一区域包括：多个光电转换元件; 以及与所述多个光电转换元件相邻形成的多个垂直传输沟道; 第二区包括：水平传送通道; 以及放大器的浮动扩散区域和第一级驱动FET; 并且第三区域分别包括放大器的第一状态负载FET，第二级驱动FET，第二级负载FET，第三级驱动FET和第三级负载FET。 可以使固态图像拾取装置紧凑。

公开(公告)号：US07227540B2

公开(公告)日：2007-06-05

申请号：US10421945

申请日：2003-04-24

申请人： Jin Murayama ,  Koichi Kimura ,  Shintaro Washizu ,  Fumitoshi Toyokawa

发明人： Jin Murayama ,  Koichi Kimura ,  Shintaro Washizu ,  Fumitoshi Toyokawa

IPC分类号： G09G5/00

CPC分类号： G09F9/372

摘要： An MEM unit according to the invention comprises an Si (silicon) substrate 1 having such a thickness as to transmit a visible light therethrough, an insulating layer 2 formed in contact with the upper surface of the Si substrate 1, a lower electrode layer 3 formed in contact with the upper surface of the insulating layer 2, a sacrificial layer gap 4 of a space formed in the partial region of the upper surface of the lower electrode layer 3, a movable film 5 formed on the upper surface of the lower electrode layer 3 to cover the sacrificial layer gap 4, an upper electrode 6 formed in contact with the upper part of the movable film 5, a contact hole 7 penetrating to reach the surface of the lower electrode layer 3 from the surface of the movable film 5, and a lower electrode 8 formed from the surroundings of the upper part of the contact hole 7 to the surface of the lower electrode layer 3 through the contact hole 7.

摘要翻译： 根据本发明的MEM单元包括具有透射可见光的厚度的Si（硅）衬底1，与Si衬底1的上表面接触形成的绝缘层2，形成的下电极层3 与绝缘层2的上表面接触形成在下电极层3的上表面的部分区域中的空间的牺牲层间隙4，形成在下电极层的上表面上的可动膜5 如图3所示，覆盖牺牲层间隙4，与可动膜5的上部接触形成的上部电极6，从可动膜5的表面贯通到下部电极层3的表面的接触孔7， 以及从接触孔7的上部周围通过接触孔7到下电极层3的表面形成的下电极8。

公开(公告)号：US06927380B2

公开(公告)日：2005-08-09

申请号：US10060188

申请日：2002-02-01

申请人： Tatsuya Hagiwara ,  Jin Murayama ,  Tetsuo Yamada ,  Satoshi Arakawa ,  Hiroaki Yasuda

发明人： Tatsuya Hagiwara ,  Jin Murayama ,  Tetsuo Yamada ,  Satoshi Arakawa ,  Hiroaki Yasuda

IPC分类号： G21K4/00 ,  G01T1/00 ,  G03B42/02 ,  H01L27/148 ,  H01L31/10 ,  H04N1/028 ,  H04N1/04 ,  H04N1/19 ,  H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14812 ,  H01L27/14825

摘要： The charge read out efficiency of a line sensor utilizing a large photodiode is improved. A line sensor formed of a photoelectric converting portion utilizing a photodiode divided into a plurality of regions and having a potential inclination configuration wherein the potential wells thereof become deeper the closer the position thereof is to a readout gate is provided.

摘要翻译： 提高了利用大型光电二极管的线传感器的电荷读出效率。 提供一种线传感器，其由光电转换部分构成，该光电转换部分利用被划分为多个区域的光电二极管，并且具有潜在的倾斜结构，其中势阱越靠近其位置越深到读出栅极。

公开(公告)号：US06664626B2

公开(公告)日：2003-12-16

申请号：US09917819

申请日：2001-07-31

申请人： Nobuo Matsumoto ,  Jin Murayama

发明人： Nobuo Matsumoto ,  Jin Murayama

IPC分类号： H01L2312

CPC分类号： B41J2/1632 ,  B41J2/1603 ,  B41J2/1631

摘要： An object of the present invention is forming a concave portion (including a penetration hole) in a semiconductor substrate by a sandblast method without causing electrostatic breakdown. In order to achieve the object, in a wafer in which at least two chips are formed, metal films are formed at least in the vicinity of circumferential portions of regions in which the concave portions (including penetration holes) of the respective chips are to be formed. In addition, the metal films are extended from the vicinity of the circumferential portions to ends of the respective corresponding chips. Further, the metal films are connected with each other through regions between the chips. The entire surface of the wafer including the metal films is masked, except for the regions in which the concave portions of the respective chips are to be formed. At least a portion of the metal films is grounded and then the concave portions are formed in the respective chips formed on the wafer by the sandblast method.

公开(公告)号：US06552359B2

公开(公告)日：2003-04-22

申请号：US09940912

申请日：2001-08-29

申请人： Jin Murayama

发明人： Jin Murayama

IPC分类号： H01L2358

CPC分类号： G01R31/27

摘要： The drive circuit is formed on a substrate by a first fabrication process and drives a plurality of elements to be driven being formed on the substrate by a second fabrication process which is different from the first fabrication process. The drive circuit includes driver transistors provided between a first signal line and the plurality of elements to be driven, a control circuit for performing on-off control on the driver transistors and a test circuit for testing the drive circuit. The test circuit includes switching elements and resistor elements that are series connected between a second signal line and junctions of the driver transistors and the elements to be driven, respectively, and performs on-off control on the switching elements in response to a control signal. The testing method tests the drive circuit that has been formed on the substrate, before the plurality of elements to be driven are formed on the substrate. The method turns on the switching elements of the test circuit in response to the control signal and performs on-off control on the driver transistors by the control circuit.

摘要翻译： 通过第一制造工艺在基板上形成驱动电路，并通过不同于第一制造工艺的第二制造工艺驱动要在基板上形成的多个待驱动元件。 驱动电路包括设置在第一信号线与待驱动的多个元件之间的驱动晶体管，用于对驱动晶体管进行开 - 关控制的控制电路和用于测试驱动电路的测试电路。 测试电路包括分别连接在第二信号线和驱动晶体管与被驱动元件的结之间的开关元件和电阻元件，并响应于控制信号对开关元件进行开 - 关控制。 在基板上形成多个被驱动元件之前，测试方法测试已经形成在基板上的驱动电路。 该方法响应于控制信号接通测试电路的开关元件，并通过控制电路对驱动晶体管进行开 - 关控制。

公开(公告)号：US06403476B2

公开(公告)日：2002-06-11

申请号：US09917208

申请日：2001-07-30

申请人： Jin Murayama ,  Masao Mitani

发明人： Jin Murayama ,  Masao Mitani

IPC分类号： H01L2144

CPC分类号： H01L21/481 ,  B41J2/1603 ,  B41J2/1631 ,  B41J2/1632 ,  Y10S438/945

摘要： An object of the present invention is forming a concave portion (including a penetration hole) in a semiconductor substrate by a sandblast method without causing a defect such as a chip or a crack in processing ends of the concave portion. In order to achieve the object, in a semiconductor wafer in which a plurality of semiconductor chips are formed, a metal film is formed on the semiconductor substrate at least in a region of a predetermined range in an inside and an outside of an circumferential portion except for a central portion and its vicinity of a region in that the concave portion (including the penetration hole) of the respective semiconductor chips is to be formed. Then, the entire surface of the semiconductor wafer including the metal film is masked except for the region in that the concave portion of the respective semiconductor chips is to be formed. With this state, the concave portion is formed in the respective semiconductor chips formed on the semiconductor wafer by the sandblast method.

摘要翻译： 本发明的目的是通过喷砂法在半导体衬底中形成凹部（包括穿透孔），而不会在凹部的处理端部引起诸如芯片或裂纹的缺陷。 为了实现该目的，在其中形成有多个半导体芯片的半导体晶片中，至少在周向部分的内部和外部的至少一个预定范围的区域中在半导体衬底上形成金属膜，除了 对于要形成各个半导体芯片的凹部（包括贯通孔）的区域的中心部分及其附近。 然后，除了要形成各个半导体芯片的凹部的区域之外，掩模包括金属膜的半导体晶片的整个表面。 在这种状态下，通过喷砂法在凹凸部分形成在半导体晶片上形成的各个半导体芯片中。

公开(公告)号：US5122649A

公开(公告)日：1992-06-16

申请号：US622575

申请日：1990-12-05

申请人： Jin Murayama ,  Jun Fukazawa

发明人： Jin Murayama ,  Jun Fukazawa

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/374

CPC分类号： H04N3/1512 ,  H01L27/14643

摘要： A MOS-type solid-state imaging device is disclosed capable of high speed scanning. The imaging device includes a plurality of photodiodes arranged in a matrix form, a vertical scanning circuit, a horizontal scanning circuit, a first group of switching transistors and a second switching transistors. The imaging device enables multiple pixel signals to be simultaneously outputted without adversely effecting adjacent pixel signals during a scanning operations. A separating layer formed of an impurity layer held at a predetermined potential is embedded at least between two adjacent switching transistors, thereby separating the capacitive coupling between the two adjacent sets of switching transistors.

摘要翻译： 公开了能够进行高速扫描的MOS型固态成像装置。 成像装置包括以矩阵形式布置的多个光电二极管，垂直扫描电路，水平扫描电路，第一组开关晶体管和第二开关晶体管。 该成像装置能够在扫描操作期间同时输出多个像素信号而不会不利地影响相邻的像素信号。 至少在两个相邻的开关晶体管之间嵌入由保持在预定电位的杂质层形成的分离层，从而分离两个相邻开关晶体管组之间的电容耦合。

公开(公告)号：US5072284A

公开(公告)日：1991-12-10

申请号：US576101

申请日：1990-08-31

申请人： Hiroshi Tamura ,  Ryuji Kondo ,  Jin Murayama ,  Hideki Kosaka

发明人： Hiroshi Tamura ,  Ryuji Kondo ,  Jin Murayama ,  Hideki Kosaka

IPC分类号： H01L31/0203

CPC分类号： H01L31/0203 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/16195 ,  H01L2924/181

摘要： A solid state image pick-up device is provided in which a photoelectric conversion element is configured so that a light reception portion of the photoelectric conversion element is covered with a member of light transmissible glass. A frame, used as a package, is filled with synthetic resin by a potting method, and the synthetic resin is solidified so that the frame, the peripheral portions of the glass member, and the photoelectric conversion element are integrally combined with each other. By so doing, the light transmission property of the photoelectric element can be properly made, excellent moisture resistance can be obtained, and improved reliability of the device results.

摘要翻译： 提供一种固体摄像装置，其中光电转换元件被配置为使得光电转换元件的光接收部分被透光玻璃的构件覆盖。 用作包装的框架通过灌封法填充合成树脂，合成树脂固化，使得框架，玻璃构件的周边部分和光电转换元件彼此一体地组合。 通过这样做，可以适当地制造光电元件的透光性，可以获得优异的耐湿性，并提高器件的可靠性。

公开(公告)号：US4985775A

公开(公告)日：1991-01-15

申请号：US309924

申请日：1989-02-13

申请人： Jin Murayama ,  Ryuji Kondo

发明人： Jin Murayama ,  Ryuji Kondo

IPC分类号： H04N1/21 ,  H04N5/335 ,  H04N5/357 ,  H04N5/372

CPC分类号： H04N1/00384 ,  H04N1/00397 ,  H04N1/2112 ,  H04N1/2158 ,  H04N3/1568 ,  H04N2101/00 ,  H04N2201/3225

摘要： An electronic still camera in which every time a solid state pickup element is read out, immediately it is read out again in order to empty out residual charges.

摘要翻译： 一种电子静态照相机，其中每当读出固态拾取元件时，立即再次读出以清除残留电荷。