摘要:
A nitride-based semiconductor laser device, includes: a first cladding layer of a first conductivity type; an active layer formed above the first cladding layer; an overflow-preventing layer of a second conductivity type formed on the active layer; and a second cladding layer of the second conductivity type formed above the overflow-preventing layer. The active layer includes three barrier layers and two well layers so that each well layer can be inserted between the corresponding ones of the three barrier layers and two of the three barrier layers are located on the outer sides of both well layers, thereby constituting a double-layered quantum well layer. The thickness of each well layer is set within a range of 2 to 5 nm.
摘要:
A signal arrival direction deducing device capable of deducing the signal arrival direction even when a correlation matrix between input signals and noise correlation matrix are singular. A state is observed in which only noise is present and a state is observed in which a sound whose arrival direction is to be deduced. A short time Fourier transform is performed. Correlation matrix and an input signal correlation matrix are used to compute proper eigenvalues/proper eigenvectors and improper eigenvectors of the noise correlation matrix with respect to the input signal correlation matrix. A matrix for determining the complementary space component of the signal partial space is computed from the proper eigenvectors and the improper eigenvectors. An arrival direction search is made for the sound arrival direction using the matrix for determining the complementary space component of the signal partial space.
摘要:
A protector device is provided which includes a projecting system, a photographing system, and a control section. The projecting system includes a light source lamp, a micromirror element, and a projecting lens, and each image for each of a plurality of color components is time-divided by use of a color wheel, projected, and displayed with respect to an input color image signal. The photographing system includes a photographing lens, a CCD, and a processing circuit in which the projected and displayed image is photographed in accordance with an instruction, when the photographing of the projected and displayed image is instructed. And the control section detects a rotation position of the color wheel with a marker sensor and controls the photographing system to execute the photographing in synchronization with a time division period for each color component in the projecting system.
摘要:
A nitride-based semiconductor laser device, includes: a first cladding layer of a first conductivity type; an active layer formed above the first cladding layer; an overflow-preventing layer of a second conductivity type formed on the active layer; and a second cladding layer of the second conductivity type formed above the overflow-preventing layer. The active layer includes three barrier layers and two well layers so that each well layer can be inserted between the corresponding ones of the three barrier layers and two of the three barrier layers are located on the outer sides of both well layers, thereby constituting a double-layered quantum well layer. The thickness of each well layer is set within a range of 2 to 5 nm.
摘要:
A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.
摘要:
A semiconductor laser device comprising: a first cladding layer of a first conductivity type; an active layer provided on the first cladding layer and having a quantum well structure; an overflow blocking layer of a second conductivity type provided on the overflow blocking layer. The active layer includes a region having an impurity concentration is 3×1017 cm−3 or more and having a thickness of 30 nm or less between the overflow blocking layer and a well layer in the active layer closet to the overflow blocking layer.
摘要:
A high-sped block is formed by generating and connecting a new basic block (contains an intermediate code obtained by performing variable replacing processing to a path replacement target variable of the intermediate code on a hot path of an original partial program and contains a branching intermediate code where a branching instruction on the hot path is converted so as to execute the hot path), and a basic block with an intermediate code for restoring value of path guarantee variable among the path replacement target variables to a value of an original variable. When an execution result of a conditional branching intermediate code is true, the speeding up of the original program is achieved through executing the basic block, and performing dependency analysis and dependency generation between the intermediate codes in the high-speed block and scheduling of the instructions.
摘要:
A projector comprises an alternating-current-drive lamp, a rotating color wheel which includes color segments for transmitting color lights and is disposed in an optical path from the lamp, the color segments including a transparent segment, a projection unit configured to form an optical image by the color lights transmitted through the color wheel, and a light source control unit configured to raise a drive frequency of the lamp in a period in which the transparent segment of the color wheel is present in the optical path from the lamp.
摘要:
A semiconductor laser device comprises: a first cladding layer provided on a substrate, the first cladding layer being made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer being made of a quantum well structure using nitride semiconductor; and a second cladding layer provided on the active layer, the second cladding layer having a ridge waveguide and being made of nitride semiconductor of a second conductivity type. The first cladding layer is made of AlZGa1-ZN having an aluminum composition ratio Z of 0.04 or less and has a thickness of not less than 1.6 μm.
摘要翻译:一种半导体激光器件,包括:第一包覆层,设置在基板上,所述第一包层由第一导电类型的氮化物半导体制成; 设置在所述第一包层上的有源层,所述有源层由使用氮化物半导体的量子阱结构构成; 以及设置在所述有源层上的第二覆层,所述第二覆层具有脊波导,并且由第二导电类型的氮化物半导体制成。 第一包层由铝组成比Z为0.04以下的Al z Ga 1-Z N N制成,厚度不小于1.6μm。
摘要:
Ornithine derivatives of the formula (I): wherein X is —CO— or —(CH2)k— (wherein k is 1, 2 or 3); Y is Z-(CH2)n—, and the like; {wherein Z is R1—CO—NR4—, and the like, (wherein R1 is aryl, and the like; and R4 is hydrogen, or lower alkyl); and n is 1, 2, 3, 4, 5 or 6}; R2 is aryl-(lower alkyl), and the like; R3 is -Q-R7, [wherein Q is —CO— or —SO2—, R is heterocyclyl], and the like; and R5 and R6 are independently hydrogen or lower alkyl; or a pharmaceutically acceptable salt thereof, which are useful as medicament.
摘要翻译:式(I)的鸟氨酸衍生物:其中X是-CO-或 - (CH 2 CH 2)n - (其中k是1,2或3); Y是Z-(CH 2)n - 等等; {其中Z是R 1 -CO-NR 4 - 等,(其中R 1是芳基等)和 R 4是氢或低级烷基); n为1,2,3,4,5或6}; R 2是芳基 - (低级烷基)等; R 3是-Q-R 7,[其中Q是-CO-或-SO 2 - ,R是杂环基]等; R 5和R 6独立地是氢或低级烷基; 或其药学上可接受的盐,其可用作药物。