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    Information recording and reproducing apparatus
    23.
    发明授权
    Information recording and reproducing apparatus 有权
    信息记录和再现装置

    公开(公告)号：US08018762B2

    公开(公告)日：2011-09-13

    申请号：US12636606

    申请日：2009-12-11

    申请人： Kohichi Kubo ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

    发明人： Kohichi Kubo ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0033 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/149 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C16/3427 ,  G11C2213/53 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/147 ,  H01L45/1625

    摘要： An information recording and reproducing apparatus, includes: a stacked structure including an electrode layer and a recording layer; a buffer layer added to the electrode layer; and a voltage application unit configured to apply a voltage to the recording layer, produce a phase change in the recording layer, and record information. The recording layer includes a first layer including a first compound having an ilmenite structure represented by AxMyX3 (0.1≦x≦1.1 and 0.75≦y≦1), the A and the M being mutually different elements, at least one selected from the A and the M being a transition element having a d orbit incompletely filled by electrons, the A being an element including at least one selected from the group consisting of Be, Mg, Fe, Co, Ni, Cu, and Zn, the M being an element including at least one selected from the group consisting of Ti, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, Ru, and Rh, the X being an element including at least one selected from the group consisting of O (oxygen) and N (nitrogen).

    摘要翻译： 一种信息记录和再现装置，包括：堆叠结构，包括电极层和记录层; 添加到电极层的缓冲层; 以及电压施加单元，被配置为向记录层施加电压，在记录层中产生相变，并记录信息。 记录层包括第一层，其包含具有由AxMyX3（0.1＆amp; NlE; x＆nlE; 1.1和0.75＆nlE; y＆nlE; 1）表示的钛铁矿结构的第一化合物，A和M是相互不同的元素， A和M是具有未被电子填充的轨道的过渡元素，A是包括选自Be，Mg，Fe，Co，Ni，Cu和Zn中的至少一种的元素，M是 包括选自由Ti，Ge，Sn，V，Cr，Mn，Fe，Co，Ni，Nb，Ta，Mo，W，Re，Ru和Rh组成的组中的至少一种的元素，X是包括 选自O（氧）和N（氮）中的至少一种。

    INFORMATION RECORDING AND REPRODUCING APPARATUS
    24.
    发明申请
    INFORMATION RECORDING AND REPRODUCING APPARATUS 有权
    信息记录和再现设备

    公开(公告)号：US20100142261A1

    公开(公告)日：2010-06-10

    申请号：US12636606

    申请日：2009-12-11

    申请人： Kohichi KUBO ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

    发明人： Kohichi KUBO ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Toshiro Hiraoka

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： G11C13/0033 ,  B82Y10/00 ,  G11B9/04 ,  G11B9/149 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C16/3427 ,  G11C2213/53 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/147 ,  H01L45/1625

    摘要： An information recording and reproducing apparatus, includes: a stacked structure including an electrode layer and a recording layer; a buffer layer added to the electrode layer; and a voltage application unit configured to apply a voltage to the recording layer, produce a phase change in the recording layer, and record information. The recording layer includes a first layer including a first compound having an ilmenite structure represented by AxMyX3 (0.1≦x≦1.1 and 0.75≦y≦1), the A and the M being mutually different elements, at least one selected from the A and the M being a transition element having a d orbit incompletely filled by electrons, the A being an element including at least one selected from the group consisting of Be, Mg, Fe, Co, Ni, Cu, and Zn, the M being an element including at least one selected from the group consisting of Ti, Ge, Sn, V, Cr, Mn, Fe, Co, Ni, Nb, Ta, Mo, W, Re, Ru, and Rh, the X being an element including at least one selected from the group consisting of O (oxygen) and N (nitrogen).

    摘要翻译： 一种信息记录和再现装置，包括：堆叠结构，包括电极层和记录层; 添加到电极层的缓冲层; 以及电压施加单元，被配置为向所述记录层施加电压，在所述记录层中产生相变，并记录信息。 记录层包括第一层，其包含具有由AxMyX3（0.1＆amp; NlE; x＆nlE; 1.1和0.75＆nlE; y＆nlE; 1）表示的钛铁矿结构的第一化合物，A和M是相互不同的元素， A和M是具有未被电子填充的轨道的过渡元素，A是包括选自Be，Mg，Fe，Co，Ni，Cu和Zn中的至少一种的元素，M是 包括选自由Ti，Ge，Sn，V，Cr，Mn，Fe，Co，Ni，Nb，Ta，Mo，W，Re，Ru和Rh组成的组中的至少一种的元素，X是包括 选自O（氧）和N（氮）中的至少一种。

    INFORMATION RECORDING AND REPRODUCING DEVICE
    25.
    发明申请
    INFORMATION RECORDING AND REPRODUCING DEVICE 有权
    信息记录和复制设备

    公开(公告)号：US20110031459A1

    公开(公告)日：2011-02-10

    申请号：US12886254

    申请日：2010-09-20

    申请人： Kohichi KUBO ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Tsukasa Nakai ,  Toshiro Hiraoka

    发明人： Kohichi KUBO ,  Chikayoshi Kamata ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Tsukasa Nakai ,  Toshiro Hiraoka

    IPC分类号： H01L45/00

    CPC分类号： B82Y10/00 ,  G11B9/04 ,  G11B9/1481 ,  G11B9/149 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/51 ,  G11C2213/53 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/101

    摘要： According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element.

    摘要翻译： 根据一个实施例，信息记录和再现装置包括第一层，第二层和记录层。 记录层设置在第一层和第二层之间，并且能够在具有第一电阻的第一状态和具有高于第一电阻的第二电阻的第二状态之间可逆地改变。 记录层包括第一化合物层和第二化合物层。 第一化合物层含有第一化合物。 第一化合物包括第一阳离子元件和不同于第一阳离子元件的第二阳离子元件。 第二化合物层含有第二化合物。 第二化合物包括具有部分填充有电子的d轨道的过渡元素，并且第二化合物包括能够存储第一阳离子元件和第二阳离子元素中的至少一种的空隙位置。

    INFORMATION RECORDING/REPRODUCING DEVICE
    28.
    发明申请
    INFORMATION RECORDING/REPRODUCING DEVICE 有权
    信息记录/再现设备

    公开(公告)号：US20110216576A1

    公开(公告)日：2011-09-08

    申请号：US13044384

    申请日：2011-03-09

    申请人： Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    发明人： Shinya Aoki ,  Kohichi Kubo ,  Takayuki Tsukamoto ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Tsukasa Nakai

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/1233 ,  G11B9/04 ,  G11C13/0011 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/146

    摘要： According to one embodiment, an information recording/reproducing device includes a recording layer and a driver section. The recording layer has a first layer including a first compound. The first compound includes a mixed crystal of a first oxide containing a first metallic element and a second oxide. The second oxide has a crystal structure being same as the first oxide and contains a second metallic element different from the first metallic element. The driver section is configured to produce state change in the recording layer to record information by at least one of application of voltage to the recording layer and passage of current to the recording layer. Composition ratio of an element having a smaller ionic radius of the first and second metallic elements is not less than percolation threshold of a lattice formed of ions of the first and second metallic elements based on the crystal structure.

    摘要翻译： 根据一个实施例，信息记录/再现装置包括记录层和驱动器部分。 记录层具有包含第一化合物的第一层。 第一化合物包括含有第一金属元素和第二氧化物的第一氧化物的混合晶体。 第二氧化物具有与第一氧化物相同的晶体结构，并且含有与第一金属元素不同的第二金属元素。 驱动器部分被配置为在记录层中产生状态变化，以通过施加电压至记录层和将电流流向记录层中的至少一个来记录信息。 基于晶体结构，第一和第二金属元素离子半径较小的元素的组成比不小于由第一和第二金属元素的离子形成的晶格的渗透阈值。

    INFORMATION RECORDING/REPRODUCING DEVICE
    30.
    发明申请
    INFORMATION RECORDING/REPRODUCING DEVICE 审中-公开
    信息记录/再现设备

    公开(公告)号：US20100074001A1

    公开(公告)日：2010-03-25

    申请号：US12563703

    申请日：2009-09-21

    申请人： Kohichi Kubo ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Toshiro Hiraoka

    发明人： Kohichi Kubo ,  Takayuki Tsukamoto ,  Shinya Aoki ,  Takahiro Hirai ,  Chikayoshi Kamata ,  Toshiro Hiraoka

    IPC分类号： G11C11/56 ,  H01L45/00

    CPC分类号： G11B9/149 ,  B82Y10/00 ,  G11B9/14

    摘要： The information recording/reproducing device includes a stacked structure which is comprised of an electrode layer and a recording layer, a buffer layer which contacts with the recording layer and a recording circuit which records data to the recording layer by generating a phase change in the recording layer. The recording layer is comprised of a complex compound having two cations, and one of the cations is a transition element having “d” orbit where electrons are incompletely filled. The recording layer is comprised of CuxAyXz (0.1≦x≦1.1, 0.9≦y≦1.1, 1.8≦z≦2.2), and includes a first chemical compound having a delafossite structure. The buffer layer is comprised of one of M3N4, M3N5, MN2, M4O7, MO2 and M2O5.

    摘要翻译： 信息记录/再现装置包括由电极层和记录层组成的堆叠结构，与记录层接触的缓冲层和通过在记录中产生相变而将数据记录到记录层的记录电路 层。 记录层由具有两个阳离子的络合物组成，其中一个阳离子是具有“d”轨道的过渡元素，其中电子未完全填充。 记录层由CuxAyXz（0.1＆nlE; x＆nlE; 1.1,0.9＆nlE; y＆nlE; 1.1,1.8＆nlE; z＆nlE; 2.2）组成，并且包括具有delafossite结构的第一化合物。 缓冲层由M3N4，M3N5，MN2，M4O7，MO2和M2O5中的一种构成。