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51 条记录 (耗时 0.027 秒)

    Method of Determining Base Sequence of Nucleic Acid and Apparatus Therefor
    21.
    发明申请
    Method of Determining Base Sequence of Nucleic Acid and Apparatus Therefor 审中-公开
    确定核酸碱基序列的方法及其设备

    公开(公告)号：US20080215252A1

    公开(公告)日：2008-09-04

    申请号：US11996647

    申请日：2006-07-21

    申请人： Tomoji Kawai ,  Hiroyuki Tanaka

    发明人： Tomoji Kawai ,  Hiroyuki Tanaka

    IPC分类号： C12Q1/68

    CPC分类号： C12Q1/6869 ,  G01Q60/12 ,  C12Q2565/601

    摘要： In a preferred embodiment, an exploring needle of a probe 2 is located at the position of each base of a nucleic acid 6, and a tunneling current value is set to a given value measure. When a bias voltage applied to a substrate is changed step by step from −6 V to 4 V, according to the height of an observed image of each base, the electronic state distribution pattern of each base is obtained. The thus obtained electronic state distribution pattern of each base in the nucleic acid as a measurement object is checked against those in a database to find a base species having the highest degree of similarity to each base by pattern matching to identify each base species to determine the base sequence of the nucleic acid.

    摘要翻译： 在优选实施例中，探针2的探针位于核酸6的每个碱基的位置，隧道电流值被设定为给定值测量值。 当施加到衬底的偏置电压从-6V逐步改变到4V时，根据每个基底的观察图像的高度，获得每个基底的电子状态分布图案。 对于数据库中的数据库中的每个碱基的每个碱基的电子状态分布图案进行检查，以通过模式匹配找到与每个碱基具有最高相似程度的碱基，以鉴定每种碱基种类，以确定 碱基序列。

    Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
    22.
    发明授权
    Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device 失效
    隧道磁阻器件半导体结器件磁存储器和半导体发光器件

    公开(公告)号：US07309903B2

    公开(公告)日：2007-12-18

    申请号：US10505942

    申请日：2003-03-25

    申请人： Hidekazu Tanaka ,  Tomoji Kawai

    发明人： Hidekazu Tanaka ,  Tomoji Kawai

    IPC分类号： H01L29/82

    CPC分类号： H01L33/26 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3213 ,  H01F10/3254 ,  H01L29/868 ,  H01L43/08

    摘要： A pin junction element (10) includes a ferromagnetic p-type semiconductor layer (11) and a n-type semiconductor layer (12) which are connected via an insulating layer (13), and which shows a tunneling magnetic resistance according to the magnetization of the ferromagnetic p-type semiconductor layer (11) and the magnetization of the ferromagnetic n-type semiconductor layer (12). In this pin junction element (10), an empty layer is formed with an applied bias, thereby generating tunnel current via an empty layer. As a result, it is possible to generate tunnel current even when adopting a thicker insulating layer than that of the conventional tunnel magnetic resistance element.

    摘要翻译： 针接合元件（10）包括通过绝缘层（13）连接的铁磁性p型半导体层（11）和n型半导体层（12），并且其表示根据磁化的隧道磁阻 的铁磁性p型半导体层（11）和铁磁性n型半导体层（12）的磁化。 在该引脚接合元件（10）中，形成具有施加偏压的空白层，从而经由空层产生隧道电流。 结果，即使采用比常规隧道磁阻元件更厚的绝缘层，也可以产生隧道电流。

    Field-effect transistor
    24.
    发明申请
    Field-effect transistor 审中-公开
    场效应晶体管

    公开(公告)号：US20060017080A1

    公开(公告)日：2006-01-26

    申请号：US10526470

    申请日：2003-09-04

    申请人： Hidekazu Tanaka ,  Tomoji Kawai ,  Teruo Kanki ,  Young- Geun Park

    发明人： Hidekazu Tanaka ,  Tomoji Kawai ,  Teruo Kanki ,  Young- Geun Park

    IPC分类号： H01L29/94

    CPC分类号： H01L29/78696 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/82 ,  H01L49/003

    摘要： The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.

    摘要翻译： 场效应晶体管包括：在0℃以上显示铁磁性的由Ba-Mn氧化物制成的膜厚度为50nm以下的铁磁层; 由介电材料或铁电材料制成的电介质层和铁磁层和电介质层彼此接合。 因此，可以在0℃以上控制磁性，电输送性和/或磁阻效应。

    Ambipolar organic thin-film field-effect transistor and making method
    29.
    发明申请
    Ambipolar organic thin-film field-effect transistor and making method 有权
    双极有机薄膜场效应晶体管及制作方法

    公开(公告)号：US20070281412A1

    公开(公告)日：2007-12-06

    申请号：US11882434

    申请日：2007-08-01

    申请人： Tomoji Kawai ,  Masateru Taniguchi ,  Eriko Mizuno ,  Ikuo Fukui

    发明人： Tomoji Kawai ,  Masateru Taniguchi ,  Eriko Mizuno ,  Ikuo Fukui

    IPC分类号： H01L21/336

    CPC分类号： H01L51/052 ,  H01L51/0078 ,  H01L51/0545

    摘要： In a thin-film field-effect transistor having metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, and absent polling, the transistor exhibits p-type transistor characteristics.

    摘要翻译： 在具有金属/绝缘体/半导体（MIS）结构的薄膜场效应晶体管中，半导体层由有机化合物形成，并且绝缘体层由可溶于有机溶剂的有机化合物形成并显示出自发的 极化与铁电材料相似。 当通过施加不小于矫顽电场的电压并且不超过源极和栅电极之间的耐受电压进行轮询并且没有轮询时，晶体管呈现n型晶体管特性，晶体管表现出p型晶体管特性 。

    Field-effect transistor
    30.
    发明申请
    Field-effect transistor 审中-公开
    场效应晶体管

    公开(公告)号：US20070007568A1

    公开(公告)日：2007-01-11

    申请号：US11520628

    申请日：2006-09-14

    申请人： Hidekazu Tanaka ,  Tomoji Kawai ,  Teruo Kanki ,  Young-Geun Park

    发明人： Hidekazu Tanaka ,  Tomoji Kawai ,  Teruo Kanki ,  Young-Geun Park

    IPC分类号： H01L29/94

    CPC分类号： H01L29/78696 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/82 ,  H01L49/003

    摘要： The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.

    摘要翻译： 场效应晶体管包括：在0℃以上显示铁磁性的由Ba-Mn氧化物制成的膜厚度为50nm以下的铁磁层; 由介电材料或铁电材料制成的电介质层和铁磁层和电介质层彼此接合。 因此，可以在0℃以上控制磁性，电输送性和/或磁阻效应。