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公开(公告)号:US20070270497A1
公开(公告)日:2007-11-22
申请号:US11718894
申请日:2005-11-08
CPC分类号: A61K31/192 , A23L33/10 , A61K31/216
摘要: The present invention relates to a recuperative agent for cerebral fatigue and a recuperative food for cerebral fatigue, each including as active ingredients one or more members selected from the group consisting of chlorogenic acids, caffeic acid, ferulic acid, and pharmaceutically acceptable salts thereof. According to the present invention, recuperation from the cerebral fatigue such as decreased calculating ability based on cerebral fatigue can be achieved.
摘要翻译: 本发明涉及脑疲劳用复原剂和脑疲劳康复食品,其各自包含选自绿原酸,咖啡酸,阿魏酸及其药学上可接受的盐中的一种或多种成分作为活性成分。 根据本发明,可以实现基于脑疲劳的计算能力降低的脑疲劳的恢复。
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公开(公告)号:US07279348B2
公开(公告)日:2007-10-09
申请号:US11183432
申请日:2005-07-18
IPC分类号: H01L21/84
CPC分类号: H01L27/1288 , H01L27/1214 , H01L27/3248 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L2029/7863 , H01L2227/323
摘要: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.
摘要翻译: 在玻璃基板上的预定区域中形成多晶硅膜,然后在其上形成宽度比栅极绝缘膜窄的栅极绝缘膜和栅极电极。 然后,在整个表面上形成层间绝缘膜和ITO膜。 然后,通过将n型杂质注入多晶硅膜形成具有LDD结构的n型源/漏区。 然后,用抗蚀剂膜覆盖n型TFT形成区域和像素电极形成区域,然后通过以p型将p型杂质注入多晶硅膜形成p型源极/漏极区域 TFT形成区域。 然后,抗蚀剂膜仅留在像素电极形成区域中,并且抗蚀剂膜从其它区域去除。 通过在使用剩余的抗蚀剂膜作为掩模的同时蚀刻ITO膜来形成像素电极。
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公开(公告)号:US20070202550A1
公开(公告)日:2007-08-30
申请号:US11701719
申请日:2007-02-02
申请人: Takuya Watanabe , Kuniko Kikuchi , Yasuko Terao , Yasushi Shintani , Shuji Hinuma , Shoji Fukusumi , Ryo Fujii , Masaki Hosoya , Chieko Kitada
发明人: Takuya Watanabe , Kuniko Kikuchi , Yasuko Terao , Yasushi Shintani , Shuji Hinuma , Shoji Fukusumi , Ryo Fujii , Masaki Hosoya , Chieko Kitada
CPC分类号: C07K14/705 , C07K14/723 , C07K16/28 , G01N33/566 , G01N33/74 , G01N2333/726
摘要: The polypeptides in the present invention possess the effects of promoting and inhibiting the secretion of prolactin, and are thus useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion stimulants, which are associated with the secretion of prolactin, such as hypoovarianism, spermatic underdevelopment, menopausal symptoms, hypothyroidism, etc. The polypeptides are useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion inhibitors, which are associated with the secretion of prolactin, such as pituitary tumor, diencephalon tumor, menstrual disorder, autoimmune diseases, prolactinoma, sterility, impotence, amenorrhea, lactorrhea, acromegaly, Chiari-Frommel syndrome, Argonz-del Castilo syndrome, Forbes-Albright syndrome, lymphoma, Sheehan's syndrome, spermatogenesis disorder, etc.
摘要翻译: 本发明中的多肽具有促进和抑制催乳素分泌的作用,因此可用作预防和治疗与催乳素分泌有关的催乳激素分泌兴奋剂的各种疾病的药物,例如 作为低血糖症,精神发育不良,绝经期症状,甲状腺机能减退等。多肽可用作预防和治疗各种疾病的催乳素分泌抑制剂,其与催乳素分泌相关,例如垂体瘤,间脑瘤 肿瘤,月经紊乱,自身免疫性疾病,催乳素瘤,不育症,阳ence,闭经,泌乳,肢端肥大症,Chiari-Frommel综合征,阿尔贡兹 - 德尔卡斯蒂略综合征,福布斯 - 奥尔布赖特综合征,淋巴瘤,Sheehan综合征,精子发生障碍等。
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公开(公告)号:US07202115B2
公开(公告)日:2007-04-10
申请号:US10745419
申请日:2003-12-22
申请人: Takuya Hirano , Takuya Watanabe
发明人: Takuya Hirano , Takuya Watanabe
IPC分类号: H01L21/00
CPC分类号: H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78675
摘要: On an insulating substrate, a first insulating buffer layer, a heat accumulating-light shielding layer having at least a silicon layer on the surface thereof, a second insulating buffer layer and a first silicon layer are laminated in the order recited from the bottom. The lamination structure of the heat accumulating-light shielding layer, second buffer layer and first silicon layer is patterned. A laser beam is applied the patterned first silicon layer to melt and crystallize the first silicon layer. A thin film transistor is formed by using the crystallized first silicon layer. A polysilicon thin film transistor of high performance and small leak current to be caused by light as well as a display device using such thin film transistors is provided.
摘要翻译: 在绝缘基板上,以从底部开始的顺序层叠第一绝缘缓冲层,其表面上至少具有硅层的蓄热光屏蔽层,第二绝缘缓冲层和第一硅层。 对蓄热光屏蔽层,第二缓冲层和第一硅层的叠层结构进行图案化。 对图案化的第一硅层施加激光束以熔化和结晶第一硅层。 通过使用结晶的第一硅层形成薄膜晶体管。 提供了由光引起的高性能和小的漏电流的多晶硅薄膜晶体管以及使用这种薄膜晶体管的显示装置。
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公开(公告)号:US07161181B2
公开(公告)日:2007-01-09
申请号:US11183383
申请日:2005-07-18
IPC分类号: H01L21/00
CPC分类号: H01L27/1288 , H01L27/1214 , H01L27/3248 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L2029/7863 , H01L2227/323
摘要: A polysilicon film is formed in a predetermined region on a glass substrate, and then a gate insulating film and a gate electrode, whose width is narrower than the gate insulating film, are formed thereon. Then, an interlayer insulating film and an ITO film are formed on an overall surface. Then, n-type source/drain regions having an LDD structure are formed by implanting the n-type impurity into the polysilicon film. Then, an n-type TFT forming region and a pixel-electrode forming region are covered with a resist film, and then p-type source/drain regions are formed by implanting the p-type impurity into the polysilicon film in a p-type TFT forming region. Then, the resist film is left only in the pixel-electrode forming region and the resist film is removed from other regions. A pixel electrode is formed by etching the ITO film while using the remaining resist film as a mask.
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公开(公告)号:US07045299B2
公开(公告)日:2006-05-16
申请号:US10333192
申请日:2001-07-17
申请人: Tetsuya Ohtaki , Yasushi Masuda , Yoshihiro Takatsu , Takuya Watanabe , Yasuko Terao , Yasushi Shintani
发明人: Tetsuya Ohtaki , Yasushi Masuda , Yoshihiro Takatsu , Takuya Watanabe , Yasuko Terao , Yasushi Shintani
CPC分类号: C07K14/705 , A61K38/00 , C07K14/47 , G01N33/566 , G01N33/74 , G01N2500/02
摘要: The present invention intends to provide a novel peptide and use thereof. More particularly, the present invention provides a novel peptide and a DNA encoding the same, a drug comprising the peptide or DNA, a screening method/screening kit for a compound or its salt that promotes or inhibits the activity of the peptide, a compound or its salt obtained by the screening, a drug comprising the compound or its salt, etc.The peptide of the invention and the DNA encoding the same are usable, e.g., for the diagnosis, treatment, prevention, etc. of digestive diseases, etc. Moreover, the peptide of the invention is useful as a reagent for screening a compound or its salt that promotes or inhibits the activity of the protein of the invention.
摘要翻译: 本发明意图提供一种新的肽及其用途。 更具体地说,本发明提供新的肽和编码该肽的DNA,包含肽或DNA的药物,用于促进或抑制肽的活性的化合物或其盐的筛选方法/筛选试剂盒,化合物或 其通过筛选获得的盐,包含该化合物或其盐的药物等。本发明的肽及其编码的DNA可用于例如消化系统疾病的诊断,治疗,预防等。 此外,本发明的肽可用作筛选促进或抑制本发明的蛋白质的活性的化合物或其盐的试剂。
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公开(公告)号:US06918507B2
公开(公告)日:2005-07-19
申请号:US10389914
申请日:2003-03-18
申请人: Takuya Watanabe
发明人: Takuya Watanabe
CPC分类号: H02G3/081
摘要: A fixing structure for fixing a case main body with a lid includes fitting portions provided for the case main body and the lid respectively. One of the fitting portions includes a fitting bore having an engagement bore to be engaged by the other of the fitting portions and a bore extending from a fitting direction terminal part of the engagement bore in a fitting direction. The other of the fitting portions includes a fitting projection portion having an engaging projection portion provided at a position corresponding to the engagement bore and a guide projection portion provided at a position corresponding to the bore. The guide projection portion has a fitting guide portion, the height of which decreases from engaging projection portion side thereof toward an end part of the guide projection portion.
摘要翻译: 用于用盖子固定壳体主体的固定结构包括分别设置在壳体主体和盖子上的嵌合部分。 装配部分之一包括具有与另一个装配部分接合的接合孔的装配孔和沿配合方向从接合孔的装配方向端部延伸的孔。 另一个装配部分包括配合突出部分,其具有设置在与接合孔相对应的位置处的接合突出部分和设置在对应于孔的位置的引导突出部分。 引导突出部分具有装配引导部分,其高度从其接合突出部分侧朝向引导突出部分的端部部分减小。
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公开(公告)号:US20050153391A1
公开(公告)日:2005-07-14
申请号:US10311019
申请日:2001-06-20
申请人: Masaaki Mori , Yukio Shimomura , Mioko Harada , Taiji Asami , Yoshio Matsumoto , Yuka Adachi , Tsukasa Sugo , Michiko Abe , Mika Goto , Chieko Kitada , Takuya Watanabe
发明人: Masaaki Mori , Yukio Shimomura , Mioko Harada , Taiji Asami , Yoshio Matsumoto , Yuka Adachi , Tsukasa Sugo , Michiko Abe , Mika Goto , Chieko Kitada , Takuya Watanabe
IPC分类号: A61K38/00 , A61P1/14 , A61P3/04 , C07K14/47 , C12N1/21 , C12N15/12 , C12P21/08 , A01K67/00 , A61K38/17 , C07H21/04 , C07K14/705
CPC分类号: C07K14/47 , A01K2217/05 , A61K38/00 , G01N2333/726 , G01N2500/04
摘要: The present invention aims at providing a ligand to GPR8, its DNA, etc., and more particularly, a polypeptide capable of binding to GPR8 or its amides or esters, or salts thereof, as well as its DNA, etc. The ligand to GPR8 of the present invention is useful in developing a receptor-binding assay system with the use of a GPR8 expression system, screening candidate compounds for drugs such as preventive/therapeutic agents for obesity, appetite stimulants, prolactin production inhibitors, etc.
摘要翻译: 本发明旨在提供GPR8,其DNA等的配体,更具体地说,可以与GPR8或其酰胺或酯或其盐,以及其DNA等结合的多肽。GPR8的配体 本发明可用于开发使用GPR8表达系统的受体结合测定系统,筛选用于药物的候选化合物,例如用于肥胖的预防/治疗剂,食欲激素,催乳素产生抑制剂等。
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公开(公告)号:US5846855A
公开(公告)日:1998-12-08
申请号:US749675
申请日:1996-11-15
申请人: Makoto Igarashi , Takuya Watanabe
发明人: Makoto Igarashi , Takuya Watanabe
IPC分类号: G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/417 , H01L29/45 , H01L29/786 , H01L21/00
CPC分类号: H01L29/78696 , H01L29/41733 , H01L29/66765 , H01L29/458
摘要: A thin-film transistor including a gate electrode provided on a substrate, a gate insulation film provided on the gate electrode, an operative semiconductor film provided on the gate insulation film, and a channel protection film provided on the operative semiconductor film. Semiconductor contact portions are disposed so that they are covered by the channel protection film on either side of the operative semiconductor film. A source electrode and a drain electrode are connected to the semiconductor contact portions on either side of the channel protection film. The thin-film transistor can minimize the stray capacitance due to the overlapping of the source and drain electrodes with the gate electrode and is excellent in the contact characteristic. Also, a method for fabricating a thin-film transistor is disclosed.
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公开(公告)号:US5208320A
公开(公告)日:1993-05-04
申请号:US732059
申请日:1991-07-18
申请人: Chieko Kitada , Takuya Watanabe
发明人: Chieko Kitada , Takuya Watanabe
IPC分类号: A61K38/00 , C07K14/575
CPC分类号: C07K14/57563 , A61K38/00
摘要: A polypeptide or a pharmaceutically acceptable salt thereof having c-AMP-producing activity is disclosed, the polypeptide being represented by the following general formula:X-Ser-Asp-Gly-Ile-Phe-Thr-Asp-Ser-Tyr-Ser-Arg-Tyr-Arg-Lys-Gln-Met-Ala-Val-Lys-Lys-Tyr-Leu-Y (X-SEQ ID NO:2-Y)wherein X represents any amino acid residue or an acyl group, and Y represents NH.sub.2, OH, Ala-NH.sub.2, Ala-OH, Ala-Ala-NH.sub.2, Ala-Ala-OH, Ala-Ala-Val-NH.sub.2 or Ala-Ala-Val-OH.
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