公开(公告)号：US07825017B2

公开(公告)日：2010-11-02

申请号：US12406578

申请日：2009-03-18

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Eiichi Okuno ,  Masaki Konishi

IPC分类号： H01L21/28 ,  H01L21/283 ,  H01L21/44 ,  H01L21/441 ,  H01L31/0312 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L29/0611 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/7395 ,  H01L29/8083 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2924/0002 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00

摘要： A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and electrically coupled to the semiconductor element through an opening of the insulation film, and a passivation film formed above the drift layer around the periphery of the cell region to cover an outer edge of the surface electrode. The passivation film has an opening through which the surface electrode is exposed outside. A surface of the passivation film is made uneven to increase a length from an inner edge of the opening of the passivation film to a chip edge measured along the surface of the passivation film.

摘要翻译： 设置为半导体芯片的碳化硅半导体器件包括衬底，衬底上的漂移层，漂移层上的绝缘膜，形成在漂移层的单元区域中的半导体元件，形成在漂移层上的表面电极 并且通过所述绝缘膜的开口电耦合到所述半导体元件，以及钝化膜，所述钝化膜形成在所述电池区周围的漂移层上方以覆盖所述表面电极的外边缘。 钝化膜具有开口，表面电极通过该开口暴露在外部。 钝化膜的表面被制成不均匀以增加从钝化膜的开口的内边缘到沿着钝化膜的表面测量的芯片边缘的长度。

公开(公告)号：US20090224353A1

公开(公告)日：2009-09-10

申请号：US12382012

申请日：2009-03-05

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Masayasu Ishiko ,  Hirokazu Fujiwara ,  Masaki Konishi

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Masayasu Ishiko ,  Hirokazu Fujiwara ,  Masaki Konishi

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L27/0814 ,  H01L29/0649 ,  H01L29/417 ,  H01L29/861

摘要： A diode includes the following: an n type semiconductor region; a p type semiconductor region provided in a part of a front face of the n type semiconductor region; an anode electrode (front face electrode) which adjoins a front face of the n type semiconductor region and a front face of the p type semiconductor region while at least forming a Schottky junction on a front face of the n type semiconductor region; and an insulating region which has a right-hand side (first side) and a left-hand side (second side) adjacent to the n type semiconductor region, the right-hand side facing a second n type semiconductor region which is located below the Schottky junction, the left-hand side facing a first n type semiconductor region which is located below a pn junction between the n type semiconductor region and the p type semiconductor region.

摘要翻译： 二极管包括：n型半导体区域; 设置在n型半导体区域的正面的一部分中的p型半导体区域; 邻接n型半导体区域的前表面和p型半导体区域的正面的阳极电极（正面电极），同时至少在n型半导体区域的正面上形成肖特基结; 以及具有与n型半导体区域相邻的右侧（第一侧）和左侧（第二侧）的绝缘区域，所述右侧面向位于所述n型半导体区域下方的第二n型半导体区域 肖特基结，左手侧面对位于n型半导体区域和p型半导体区域之间的pn结的下方的第一n型半导体区域。

公开(公告)号：US20090159898A1

公开(公告)日：2009-06-25

申请号：US12338151

申请日：2008-12-18

申请人： Hirokazu FUJIWARA ,  Masaki Konishi ,  Eiichi Okuno

发明人： Hirokazu FUJIWARA ,  Masaki Konishi ,  Eiichi Okuno

IPC分类号： H01L29/24 ,  H01L21/265

CPC分类号： H01L29/7813 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/872

摘要： A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype SiC substrate, and an electrode formed on a surface of the substrate. A 3C polytype layer, which extends obliquely relative to the surface of the substrate and whose end portion at the substrate surface is in contact with the electrode, is formed at the surface of the substrate. The 3C polytype layer has a lower bandgap than 4H polytype. Hence, electrons present in the 4H polytype region pass through the 3C polytype layer and reach the electrode. More precisely, the width of the passageway of the electrons is determined by the thickness of the 3C polytype layer. Consequently, with this semiconductor device, in which the passageway of the electrons is narrow, the electrons are able to reach the electrode at a speed close to the theoretical value, by the quantum wire effect. In this way, the contact resistance can be reduced in the semiconductor device.

摘要翻译： 提供一种半导体器件，其中电极和半导体衬底之间的界面的接触电阻降低。 半导体器件包括4H多型SiC衬底和形成在衬底的表面上的电极。 形成在基板表面上相对于基板的表面倾斜地延伸并且其基板表面的端部与电极接触的3C多型层。 3C多型层具有比4H多型更低的带隙。 因此，存在于4H多型区域中的电子通过3C多型层并到达电极。 更准确地说，电子通道的宽度由3C多型层的厚度决定。 因此，通过电子通道窄的这种半导体器件，电子能够以接近理论值的速度通过量子线效应到达电极。 以这种方式，可以在半导体器件中降低接触电阻。

公开(公告)号：US4347436A

公开(公告)日：1982-08-31

申请号：US134150

申请日：1980-03-25

申请人： Tadaji Fukuda ,  Masao Sugata ,  Takashi Nakagiri ,  Masaki Konishi

发明人： Tadaji Fukuda ,  Masao Sugata ,  Takashi Nakagiri ,  Masaki Konishi

IPC分类号： H01L31/0248 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/09 ,  H01J40/14

CPC分类号： H01L31/02161 ,  H01L31/0224 ,  H01L31/03921 ,  H01L31/095 ,  Y02E10/50

摘要： A photoelectric transducing element with a high polymer substrate, being characterized in that the element comprises a conductor layer formed on a flexible high polymer insulation film substrate and comprising at least one pair of independent conductor patterns and a photoelectric transducing layer superposed on the patterned portion of the conductor layer and consisting of a thin film of amorphous photoconductive material formed by means of a thin film forming means.

摘要翻译： 一种具有高聚合物衬底的光电转换元件，其特征在于，元件包括形成在柔性高聚合物绝缘膜基底上的导体层，并且包括至少一对独立导体图案和叠加在图案化部分上的光电转换层 该导体层由通过薄膜形成装置形成的非晶光导材料薄膜组成。