公开(公告)号：US20240170259A1

公开(公告)日：2024-05-23

申请号：US18510273

申请日：2023-11-15

Applicant: Tokyo Electron Limited

Inventor： Hiroshi KONDO ,  Eiki KAMATA

IPC: H01J37/32

CPC classification number: H01J37/32211 ,  H01J37/32266

Abstract: A plasma processing apparatus includes a chamber, a microwave source, and a distributor. The chamber is configured to place a substrate therein and includes a plurality of radiation units that radiate microwaves, which are arranged while facing the substrate. The microwave source outputs microwaves. The distributor has one end connected to the microwave source, and the other end branched and connected to the plurality of radiation units, and distributes and transmits the microwaves output from the microwave source to the plurality of radiation units, in which when a wavelength of the microwaves is λ, a line length from the one end to the other end falls within a predetermined range beginning from n×λ/2 (n is a natural number).

公开(公告)号：US20220277935A1

公开(公告)日：2022-09-01

申请号：US17663907

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Eiki KAMATA ,  Mikio SATO

IPC: H01J37/32 ,  B01J19/08 ,  H05H1/46 ,  C23C16/511

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave; a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part; and a microwave transmission member configured to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna. The ceiling has at least two recesses provided on an outer side of the opening, each of the at least two recesses having a depth different from each other.

公开(公告)号：US20210111003A1

公开(公告)日：2021-04-15

申请号：US17063260

申请日：2020-10-05

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Hirokazu UEDA ,  Eiki KAMATA ,  Mitsutoshi ASHIDA ,  Isao GUNJI

IPC: H01J37/32 ,  B08B7/00

Abstract: A plasma processing method includes: supplying a gas into a processing container; and intermittently supplying microwave powers output from a plurality of microwave introducing modules into the processing container. In the intermittently supplying the microwave powers, the supply of all the microwave powers from the plurality of microwave introducing modules is periodically in an OFF state for a given time.

公开(公告)号：US20210035787A1

公开(公告)日：2021-02-04

申请号：US16942145

申请日：2020-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Mikio SATO ,  Eiki KAMATA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a main container, one or more radio frequency antennas, a plurality of metal windows, and a plasma detector. The one or more radio frequency antennas are configured to generate inductively coupled plasma in a plasma generation region in the main container. The metal windows are disposed between the plasma generation region and the radio frequency antennas while being insulated from each other and from the main container. Further, a plasma detector is connected to each of the metal windows and configured to detect a plasma state.

公开(公告)号：US20190189398A1

公开(公告)日：2019-06-20

申请号：US16214613

申请日：2018-12-10

Applicant: Tokyo Electron Limited

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Eiki KAMATA ,  Mikio SATO

IPC: H01J37/32 ,  C23C16/511 ,  H05H1/46 ,  B01J19/08

CPC classification number: H01J37/32192 ,  B01J19/08 ,  C23C16/511 ,  H05H1/46

Abstract: A microwave plasma processing apparatus includes a microwave supply part configured to supply a microwave, and a microwave emission member provided on a ceiling of a process chamber and configured to emit the microwave supplied from the microwave supply part. A microwave transmission member is provided to close an opening provided in the ceiling and made of a dielectric substance that transmits the microwave transmitted to a slot antenna via the microwave emission member. The ceiling has at least one recess having a depth in a range of λsp/4±λsp/8 on an outer side of the opening when a wavelength of a surface wave of the microwave traveling through the microwave transmission member and propagating along a surface of the ceiling from the opening is taken as λsp.

公开(公告)号：US20190074166A1

公开(公告)日：2019-03-07

申请号：US16122226

申请日：2018-09-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Tomohito KOMATSU ,  Yuki OSADA ,  Hiroyuki MIYASHITA ,  Susumu SAITO ,  Kazuhiro FURUKI ,  Mikio SATO ,  Eiki KAMATA

IPC: H01J37/32

Abstract: A plasma probe device includes an antenna unit installed at an opening formed in a wall of a processing chamber or a mounting table through a sealing member configured to seal between a vacuum space and an atmospheric space, an electrode connected to the antenna unit, and a dielectric support portion made of a dielectric material and configured to support the antenna unit from an outer peripheral side. A surface of the antenna unit which is exposed through the opening and separated from a facing surface of the wall or the mounting table facing the antenna unit by a width is depressed from a surface of the wall or the mounting table where the opening is formed, which faces a plasma generation space.

公开(公告)号：US20250129474A1

公开(公告)日：2025-04-24

申请号：US18999454

申请日：2024-12-23

Applicant: Tokyo Electron Limited

Inventor： Ryota IFUKU ,  Masataka TOIYA ,  Eiki KAMATA ,  Hiroki YAMADA ,  Takashi MATSUMOTO

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02

Abstract: A method of processing a substrate includes placing the substrate on a stage in a process container, supplying a plasma generating gas into the process container to generate plasma of first power at a first pressure, controlling an inside of the process container to a second pressure lower than the first pressure, and supplying a carbon-containing gas into the process container to form a graphene film on the substrate.

公开(公告)号：US20230326716A1

公开(公告)日：2023-10-12

申请号：US18042513

申请日：2021-08-16

Applicant: Tokyo Electron Limited

Inventor： Eiki KAMATA ,  Hiroshi KANEKO ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32119 ,  H01J37/3222 ,  H01J37/32311 ,  H01J37/32201 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber having a processing space for performing plasma processing on a substrate and a synthesis space for synthesizing electromagnetic waves, a dielectric window configured to partition the processing space and the synthesis space, an antenna unit having a plurality of antennas that radiate the electromagnetic waves into the synthesis space and functioning as a phased array antenna, an electromagnetic wave output part configured to output the electromagnetic waves to the antenna unit, and a controller configured to cause the antenna unit to function as the phased array antenna. The dielectric window has a plurality of recesses on a surface thereof facing the processing space.

公开(公告)号：US20230238217A1

公开(公告)日：2023-07-27

申请号：US18156618

申请日：2023-01-19

Applicant: Tokyo Electron Limited

Inventor： Koji KOTANI ,  Eiki KAMATA ,  Taro IKEDA

IPC: H01J37/32

CPC classification number: H01J37/32238 ,  H01J37/3222

Abstract: A plasma processing apparatus includes: a processing container; a ceiling plate that constitutes a ceiling wall of the processing container, is formed of a first dielectric, and has an opening formed in the first dielectric; at least one transmissive window disposed in the opening and formed of a second dielectric having a second permittivity greater than a first permittivity of the first dielectric; and at least one electromagnetic wave supplier configured to supply electromagnetic waves toward the at least one transmissive window.

公开(公告)号：US20220068606A1

公开(公告)日：2022-03-03

申请号：US17411992

申请日：2021-08-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki KAMATA ,  Taro IKEDA ,  Haruhiko FURUYA

IPC: H01J37/32

Abstract: There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.