公开(公告)号：US20180012777A1

公开(公告)日：2018-01-11

申请号：US15636069

申请日：2017-06-28

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato

IPC: H01L21/67 ,  B05C11/10 ,  H01L21/306 ,  H01L21/66

CPC classification number: H01L21/6708 ,  B05C11/1039 ,  H01L21/30604 ,  H01L21/67017 ,  H01L21/67023 ,  H01L21/67086 ,  H01L21/67253 ,  H01L22/26

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to process a substrate by a processing liquid, and a controller. The controller processes the substrate in the liquid processing unit, and switches the processing liquid discharged from a discharge line, from a recycling line, to a waste line in which the processing liquid is discarded through the discharge line to the outside, according to a concentration of an elution component eluted from the substrate.

公开(公告)号：US20160336202A1

公开(公告)日：2016-11-17

申请号：US15152918

申请日：2016-05-12

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Takashi Nagai ,  Hiromi Hara

IPC: H01L21/67 ,  G02F1/1333 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B24B37/005 ,  H01L21/67017 ,  H01L21/67023 ,  H01L21/6704 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/67242 ,  H01L21/67253 ,  H01L22/26

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

Abstract translation: 公开了一种基板液体处理装置，其包括：液体处理单元，其用蚀刻液对形成在基板表面上的膜进行液体处理; 蚀刻液供给单元，其向所述液体处理单元供给蚀刻液; 以及控制蚀刻液供给单元的控制器。 控制器被配置为执行控制，使得在蚀刻液供给单元中将具有相对低的蚀刻速率的蚀刻液供给到液体处理单元，使得在液体处理单元中蚀刻基板 然后，从蚀刻液供给单元向液体处理单元供给在膜的蚀刻速度相对较高的状态下的蚀刻液，使得在液体处理单元中蚀刻基板。

公开(公告)号：US11430675B2

公开(公告)日：2022-08-30

申请号：US16438580

申请日：2019-06-12

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Junichi Kitano ,  Kouzou Kanagawa

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a processing tank, a reservoir, a remover, a mixer, and a return path. Etching is performed on a substrate in the processing tank by immersing the substrate in a processing liquid containing a chemical liquid and silicon. The reservoir recovers and stores the processing liquid discharged from the processing tank. The remover recovers a portion of the processing liquid discharged from the processing tank, and removes silicon from the recovered processing liquid. The mixer mixes the processing liquid stored in the reservoir with the processing liquid from which silicon has been removed by the remover. The processing liquid mixed by the mixer is returned to the processing tank through a return path.

公开(公告)号：US11189505B2

公开(公告)日：2021-11-30

申请号：US16865452

申请日：2020-05-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideaki Sato

IPC: H01L21/67 ,  H01L21/66 ,  H01L21/306 ,  B05C11/10

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to store a processing liquid and a substrate and process the substrate using the processing liquid, the processing liquid including a phosphoric acid aqueous solution; a phosphoric acid aqueous solution supply unit configured to supply the phosphoric acid aqueous solution to the liquid processing unit; a discharge line connected to the liquid processing unit, and configured to discharge the processing liquid; a return line switchably connected to the discharge line, and configured to return the processing liquid to the liquid processing unit; a recycling line switchably connected to the discharge line, and including a recycling unit configured to recycle the processing liquid; and a waste line switchably connected to the discharge line, and configured to discard the processing liquid to the outside.

公开(公告)号：US11024507B2

公开(公告)日：2021-06-01

申请号：US16089670

申请日：2017-02-09

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Jinhyun Kim

IPC: H01L21/306 ,  H01L21/311 ,  H01L21/67

Abstract: In a substrate liquid processing method for performing an etching process by bringing an etching liquid for removing a coating film into contact with a surface of a substrate having a recess and covered with a coating film inside and outside the recess, the substrate liquid processing method includes: a first coating film removal step of setting the etching liquid to a first temperature so as to attain a first etching rate and removing the coating film outside the recess in a first process time; and thereafter, a second coating film removal step of setting the etching liquid to a second temperature so as to attain a second etching rate lower than the first etching rate and removing the coating film outside the recess in the second process time while leaving the coating film inside the recess.

公开(公告)号：US10679872B2

公开(公告)日：2020-06-09

申请号：US16120884

申请日：2018-09-04

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato

IPC: H01L21/67 ,  H01L21/66 ,  B05C11/10 ,  H01L21/306

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to store a processing liquid and a substrate and process the substrate using the processing liquid, the processing liquid including a phosphoric acid aqueous solution; a phosphoric acid aqueous solution supply unit configured to supply the phosphoric acid aqueous solution to the liquid processing unit; a discharge line connected to the liquid processing unit, and configured to discharge the processing liquid; a return line switchably connected to the discharge line, and configured to return the processing liquid to the liquid processing unit; a recycling line switchably connected to the discharge line, and including a recycling unit configured to recycle the processing liquid; and a waste line switchably connected to the discharge line, and configured to discard the processing liquid to the outside.

公开(公告)号：US20190385869A1

公开(公告)日：2019-12-19

申请号：US16438580

申请日：2019-06-12

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Junichi Kitano ,  Kouzou Kanagawa

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a processing tank, a reservoir, a remover, a mixer, and a return path. Etching is performed on a substrate in the processing tank by immersing the substrate in a processing liquid containing a chemical liquid and silicon. The reservoir recovers and stores the processing liquid discharged from the processing tank. The remover recovers a portion of the processing liquid discharged from the processing tank, and removes silicon from the recovered processing liquid. The mixer mixes the processing liquid stored in the reservoir with the processing liquid from which silicon has been removed by the remover. The processing liquid mixed by the mixer is returned to the processing tank through a return path.

公开(公告)号：US20190122906A1

公开(公告)日：2019-04-25

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US20180247841A1

公开(公告)日：2018-08-30

申请号：US15905941

申请日：2018-02-27

Applicant: Tokyo Electron Limited

Inventor： Takashi Nagai ,  Hideaki Sato ,  Hiromi Hara ,  Hiroshi Yoshida ,  Tsukasa Hirayama

IPC: H01L21/67 ,  G08B21/18

CPC classification number: H01L21/67086 ,  G08B21/18 ,  H01L21/67248 ,  H01L21/67253

Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.

公开(公告)号：US10032642B2

公开(公告)日：2018-07-24

申请号：US15152918

申请日：2016-05-12

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Takashi Nagai ,  Hiromi Hara

IPC: H01L21/67 ,  H01L21/311 ,  G02F1/1333 ,  B24B37/005 ,  H01L21/66

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.