公开(公告)号：US20190067048A1

公开(公告)日：2019-02-28

申请号：US16074445

申请日：2017-01-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiro Takaki ,  Shinichi Umeno ,  Takashi Nagai ,  Hisashi Morita ,  Nobuhiro Ogata ,  Yusuke Takamatsu ,  Jiro Higashijima

IPC: H01L21/67

Abstract: A recovery route returns, to a retaining tank, mixed solution supplied to a substrate processing unit. A discarding route discards the supplied mixed solution to a place other than the retaining tank. A switching controller causes the supplied mixed solution to flow into the discarding route during a time interval until a first time interval has elapsed from a time point when the substrate processing unit starts to supply the mixed solution; causes the supplied mixed solution to flow into the recovery route during a time interval until a second time interval, which is decided based on a predetermined recovery rate, has elapsed after the first time interval elapses; and causes the supplied mixed solution to flow into the discarding route during a time interval until supply of the mixed solution has been ended from a time point when the second time interval elapses.

公开(公告)号：US20180247841A1

公开(公告)日：2018-08-30

申请号：US15905941

申请日：2018-02-27

Applicant: Tokyo Electron Limited

Inventor： Takashi Nagai ,  Hideaki Sato ,  Hiromi Hara ,  Hiroshi Yoshida ,  Tsukasa Hirayama

IPC: H01L21/67 ,  G08B21/18

CPC classification number: H01L21/67086 ,  G08B21/18 ,  H01L21/67248 ,  H01L21/67253

Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.

公开(公告)号：US10032642B2

公开(公告)日：2018-07-24

申请号：US15152918

申请日：2016-05-12

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Takashi Nagai ,  Hiromi Hara

IPC: H01L21/67 ,  H01L21/311 ,  G02F1/1333 ,  B24B37/005 ,  H01L21/66

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

公开(公告)号：US08865483B2

公开(公告)日：2014-10-21

申请号：US13956705

申请日：2013-08-01

Applicant: Tokyo Electron Limited

Inventor： Kazuhiro Aiura ,  Norihiro Itoh ,  Yusuke Hashimoto ,  Takashi Nagai

IPC: H01L21/66 ,  C09J1/00 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L22/30 ,  H01L21/67259 ,  H01L21/68728 ,  H01L21/68792 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a substrate processing apparatus in which flexibility of disposing a device configured to determine a holding state of a substrate and the flexibility of timing of determining the holding state are enhanced. The substrate processing apparatus includes a light projector configured to radiate detection light toward a region where a substrate may exist when the substrate is held by a substrate holding member and a light receiver configured to receive the detection light radiated from the light projector. A light path of the detection light from the light projector toward the light receiver passes a substrate surrounding member installed around the substrate held by the substrate holding member. The detection light penetrates the substrate surrounding member and has a wavelength which does not penetrate the substrate.

Abstract translation: 提供了一种基板处理装置，其中设置配置成确定基板的保持状态的装置和确定保持状态的定时的灵活性的灵活性。 基板处理装置包括：投光器，被配置为当基板被基板保持部件保持时朝向可存在基板的区域发射检测光;以及光接收器，被配置为接收从投影仪辐射的检测光。 来自投光器的检测光的光路通过安装在由基板保持部件保持的基板周围的基板周围。 检测光穿透基板周围元件并具有不穿透基板的波长。

公开(公告)号：US11869780B2

公开(公告)日：2024-01-09

申请号：US16126106

申请日：2018-09-10

Applicant: Tokyo Electron Limited

Inventor： Takahiro Kawazu ,  Takafumi Tsuchiya ,  Hideaki Sato ,  Hidemasa Aratake ,  Osamu Kuroda ,  Takashi Nagai ,  Jiro Harada

IPC: H01L21/06 ,  H01L21/677 ,  H01L21/67

CPC classification number: H01L21/67086 ,  H01L21/6719 ,  H01L21/67253 ,  H01L21/67057 ,  H01L21/67173 ,  H01L21/67754

Abstract: A substrate liquid processing apparatus includes a processing liquid storage unit configured to store a processing liquid therein; a processing liquid drain unit configured to drain the processing liquid from the processing liquid storage unit; and a control unit. The control unit performs a first control in a constant concentration mode in which a concentration of the processing liquid in the processing liquid storage unit is regulated to a predetermined set concentration and a second control in a concentration changing mode in which the concentration of the processing liquid is changed. In the second control, a set concentration after concentration change is compared with a set concentration before the concentration change, and when the set concentration after the concentration change is lower, the control unit controls the processing liquid drain unit to start draining of the processing liquid.

公开(公告)号：US20180233384A1

公开(公告)日：2018-08-16

申请号：US15895106

申请日：2018-02-13

Applicant: Tokyo Electron Limited

Inventor： Takashi Nagai ,  Hideaki Sato ,  Junichi Kitano ,  Kenji Goto

IPC: H01L21/67

CPC classification number: H01L21/67086 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253

Abstract: A substrate liquid processing apparatus includes a processing tub 34 which is configured to store therein a processing liquid and in which a processing of a substrate is performed by immersing the substrate in the stored processing liquid; a circulation line 50 connected to the processing tub; a pump 51 provided at the circulation line and configured to generate a flow of the processing liquid flowing out from the processing tub and returning back to the processing tub after passing through the circulation line; and a heater 52 provided at the circulation line and configured to heat the processing liquid. At least two temperature sensors 81 to 83 are provided at different positions within a circulation system including the processing tub and the circulation line. Controllers 90 and 100 control a heat generation amount of the heater based on detection temperatures of the at least two temperature sensors.

公开(公告)号：US11158525B2

公开(公告)日：2021-10-26

申请号：US16074445

申请日：2017-01-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuhiro Takaki ,  Shinichi Umeno ,  Takashi Nagai ,  Hisashi Morita ,  Nobuhiro Ogata ,  Yusuke Takamatsu ,  Jiro Higashijima

IPC: H01L21/67

Abstract: A recovery route returns, to a retaining tank, mixed solution supplied to a substrate processing unit. A discarding route discards the supplied mixed solution to a place other than the retaining tank. A switching controller causes the supplied mixed solution to flow into the discarding route during a time interval until a first time interval has elapsed from a time point when the substrate processing unit starts to supply the mixed solution; causes the supplied mixed solution to flow into the recovery route during a time interval until a second time interval, which is decided based on a predetermined recovery rate, has elapsed after the first time interval elapses; and causes the supplied mixed solution to flow into the discarding route during a time interval until supply of the mixed solution has been ended from a time point when the second time interval elapses.

公开(公告)号：US20180301345A1

公开(公告)日：2018-10-18

申请号：US16015376

申请日：2018-06-22

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Takashi Nagai ,  Hiromi Hara

IPC: H01L21/311 ,  H01L21/67 ,  B24B37/005 ,  H01L21/66

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

公开(公告)号：US20160336202A1

公开(公告)日：2016-11-17

申请号：US15152918

申请日：2016-05-12

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Takashi Nagai ,  Hiromi Hara

IPC: H01L21/67 ,  G02F1/1333 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B24B37/005 ,  H01L21/67017 ,  H01L21/67023 ,  H01L21/6704 ,  H01L21/67075 ,  H01L21/67086 ,  H01L21/67242 ,  H01L21/67253 ,  H01L22/26

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

Abstract translation: 公开了一种基板液体处理装置，其包括：液体处理单元，其用蚀刻液对形成在基板表面上的膜进行液体处理; 蚀刻液供给单元，其向所述液体处理单元供给蚀刻液; 以及控制蚀刻液供给单元的控制器。 控制器被配置为执行控制，使得在蚀刻液供给单元中将具有相对低的蚀刻速率的蚀刻液供给到液体处理单元，使得在液体处理单元中蚀刻基板 然后，从蚀刻液供给单元向液体处理单元供给在膜的蚀刻速度相对较高的状态下的蚀刻液，使得在液体处理单元中蚀刻基板。

公开(公告)号：US12033872B2

公开(公告)日：2024-07-09

申请号：US17326821

申请日：2021-05-21

Applicant: Tokyo Electron Limited

Inventor： Keita Hirase ,  Koji Ogura ,  Hiroshi Yoshida ,  Takashi Nagai ,  Jun Nonaka ,  Takumi Honda

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/67057 ,  H01L21/31111 ,  H01L21/67017 ,  H01L21/67086

Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.