公开(公告)号：US20200294823A1

公开(公告)日：2020-09-17

申请号：US16816530

申请日：2020-03-12

Applicant: Tokyo Electron Limited

Inventor： Kouji Ogura ,  Jun Nonaka ,  Takao Inada ,  Yoshinori Nishiwaki ,  Hiroshi Yoshida

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

公开(公告)号：US09862007B2

公开(公告)日：2018-01-09

申请号：US14666896

申请日：2015-03-24

Applicant: Tokyo Electron Limited

Inventor： Daisuke Saiki ,  Shogo Mizota ,  Takashi Yabuta ,  Jun Nonaka ,  Tatsuya Nagamatsu ,  Koji Tanaka ,  Tomiyasu Maezono

IPC: B08B3/14 ,  C11D11/00 ,  H01L21/67 ,  B24B57/02 ,  B01D36/04 ,  B01D37/04

CPC classification number: B08B3/14 ,  B01D36/04 ,  B01D37/04 ,  B24B57/02 ,  C11D11/0047 ,  H01L21/67017

Abstract: Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

公开(公告)号：US20170316961A1

公开(公告)日：2017-11-02

申请号：US15518094

申请日：2015-10-20

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Nakamori ,  Jun Nonaka

IPC: H01L21/67 ,  H01L21/304 ,  H01L21/687 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/00 ,  B08B3/04 ,  H01L21/304 ,  H01L21/67265 ,  H01L21/68742

Abstract: Disclosed is a substrate liquid processing method including: performing a liquid processing step of liquid-processing a substrate with a processing liquid, a rinse processing step of rinsing the liquid-processed substrate with a rinse liquid, and a water-repellency processing step of imparting water-repellency to the rinsed substrate with a water-repellent liquid; then, performing a cleaning processing step of cleaning the water-repellency-imparted substrate with a functional liquid; then, performing an alcohol processing step of bringing the cleaned substrate in contact with alcohol; and then, performing a drying processing step of drying the substrate.

公开(公告)号：US20140338706A1

公开(公告)日：2014-11-20

申请号：US14344085

申请日：2013-01-11

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67051 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67028 ,  Y10S134/902

Abstract: [Problem] To provide a liquid processing method with which, while alleviating a watermark occurring in the surface of a substrate, it is possible to hydrophobize the surface using a hydrophobing gas. [Solution] A substrate (W), retained in substrate retaining parts (21, 22, 23), is rotated and has a liquid compound supplied to the surface thereof, whereby a liquid process is carried out. Next, a rinse liquid is supplied to the surface of the substrate (W) while the substrate (W) is rotated, and the liquid compound is replaced with the rinse liquid. Next, supplying a hydrophobing gas for hydrophobizing the surface of the substrate (W) and supplying the rinse liquid to the surface of the substrate (W) after supplying the hydrophobing gas are repeated alternately, thus hydrophobizing the substrate (W). Next, the rinse liquid is removed by rotating the substrate (W), drying the substrate (W).

Abstract translation: [问题]提供一种液体处理方法，其中，在减轻在基材表面发生的水印的同时，可以使用疏水性气体使表面疏水化。 [解决方案]保持在基板保持部（21,22,23）中的基板（W）旋转，并且向其表面供给液体化合物，由此进行液体处理。 接下来，在旋转基板（W）的同时将冲洗液体供给到基板（W）的表面，并且用冲洗液更换液体化合物。 接下来，交替地重复供给用于疏水化基板（W）表面的疏水化气体，并且在供给疏水化气体之后将冲洗液供给到基板（W）的表面，从而使基板（W）疏水化。 接着，通过旋转基板（W），干燥基板（W）来除去冲洗液。

公开(公告)号：US20130284213A1

公开(公告)日：2013-10-31

申请号：US13858248

申请日：2013-04-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yosuke Hachiya ,  Norihiro Ito ,  Hisashi Kawano ,  Jun Nonaka ,  Jun Nogami

IPC: H01L21/02

CPC classification number: H01L21/02076 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/6708

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.

Abstract translation: 本公开提供了一种基板处理方法和基板处理装置。 基板处理方法包括：通过将加热的硫酸与过氧化氢混合，生成含有形成在基板表面上的抗蚀剂膜的分离效果的含有Caro酸的第一温度的SPM液体; 将SPM液体冷却至发生膜损失的还原效果的第二温度; 并将第二温度的SPM液体施加到抗蚀剂膜上，从而分离抗蚀剂膜。