LIQUID PROCESSING APPARATUS
    3.
    发明申请
    LIQUID PROCESSING APPARATUS 有权
    液体加工设备

    公开(公告)号:US20140182455A1

    公开(公告)日:2014-07-03

    申请号:US14141605

    申请日:2013-12-27

    IPC分类号: B01D19/00

    CPC分类号: B01D19/0005 H01L21/67023

    摘要: A liquid processing apparatus and a chemical liquid collecting method can suppress corrosion of wirings formed on a substrate. The liquid processing apparatus includes a processing unit configured to perform a liquid process by supplying a chemical liquid to a substrate; a collecting line configured to collect the chemical liquid supplied to the processing unit; a supply line configured to supply the collected chemical liquid to the processing unit; and a gas supply unit configured to supply an inert gas into the collecting line.

    摘要翻译: 液体处理装置和药液收集方法可以抑制在基板上形成的配线的腐蚀。 液体处理装置包括:处理单元,被配置为通过向基板提供化学液体来执行液体处理; 收集线,被配置为收集供给到所述处理单元的所述化学液体; 供给管线,被配置为将所收集的药液供应到所述处理单元; 以及气体供给单元,其构造成将惰性气体供给到收集线中。

    Liquid processing apparatus
    4.
    发明授权
    Liquid processing apparatus 有权
    液体处理设备

    公开(公告)号:US09192878B2

    公开(公告)日:2015-11-24

    申请号:US14141605

    申请日:2013-12-27

    IPC分类号: B01D19/00 H01L21/67

    CPC分类号: B01D19/0005 H01L21/67023

    摘要: A liquid processing apparatus and a chemical liquid collecting method can suppress corrosion of wirings formed on a substrate. The liquid processing apparatus includes a processing unit configured to perform a liquid process by supplying a chemical liquid to a substrate; a collecting line configured to collect the chemical liquid supplied to the processing unit; a supply line configured to supply the collected chemical liquid to the processing unit; and a gas supply unit configured to supply an inert gas into the collecting line.

    摘要翻译: 液体处理装置和药液收集方法可以抑制在基板上形成的配线的腐蚀。 液体处理装置包括:处理单元,被配置为通过向基板提供化学液体来执行液体处理; 收集线,被配置为收集供给到所述处理单元的所述化学液体; 供给管线,被配置为将所收集的药液供应到所述处理单元; 以及气体供给单元,其构造成将惰性气体供给到收集线中。

    SUBSTRATE LIQUID PROCESSING APPARATUS AND METHOD, AND COMPUTER-READABLE RECORDING MEDIUM WITH SUBSTRATE LIQUID PROCESSING PROGRAM RECORDED THEREIN
    5.
    发明申请
    SUBSTRATE LIQUID PROCESSING APPARATUS AND METHOD, AND COMPUTER-READABLE RECORDING MEDIUM WITH SUBSTRATE LIQUID PROCESSING PROGRAM RECORDED THEREIN 有权
    基板液体处理装置和方法以及具有基板液化处理程序的计算机可读记录介质

    公开(公告)号:US20150273538A1

    公开(公告)日:2015-10-01

    申请号:US14666896

    申请日:2015-03-24

    IPC分类号: B08B3/14

    摘要: Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

    摘要翻译: 公开了一种用于使用处理液在基板上进行液体处理的基板液体处理装置和方法,以及记录有基板液体处理程序的计算机可读记录介质。 在该方法中,进行第一药液供给工序,将第一药液从第一药液供给部供给至处理液储存部,进行第一化学液净化工序,对化学液中的第一药液进行净化 净化单元,执行第二化学液体供给步骤,将第二化学液体从第二药液供给单元供给到处理液储存单元,并且进行处理液供给工序,供给通过混合第一和第 第二化学液体从处理液体供应单元到基板液体处理单元。

    LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM
    6.
    发明申请
    LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM 审中-公开
    液体加工设备,液体加工方法和储存介质

    公开(公告)号:US20150147888A1

    公开(公告)日:2015-05-28

    申请号:US14548453

    申请日:2014-11-20

    IPC分类号: H01L21/67 H01L21/306

    CPC分类号: H01L21/6708

    摘要: A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.

    摘要翻译: 本公开的液体处理装置保持并旋转衬底保持单元中的衬底,在将主喷嘴单元的主喷嘴移动到蚀刻液到达衬底的中心的第一位置和第二位置之间时,喷射蚀刻液体 位于比第一位置更靠近基板周边的位置,然后以比喷射流速比第一位置更靠近基板周边的第三位置从喷嘴喷射蚀刻液体到基板 高于主喷嘴。