公开(公告)号：US20230223249A1

公开(公告)日：2023-07-13

申请号：US18121621

申请日：2023-03-15

Applicant: Tokyo Electron Limited

Inventor： Motoi TAKAHASHI ,  Ryutaro SUDA ,  Maju TOMURA ,  Takatoshi ORUI ,  Yoshihide KIHARA

IPC: H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  C23C16/34 ,  C23C16/52

CPC classification number: H01L21/02274 ,  H01L21/3065 ,  H01J37/32449 ,  H01L21/67069 ,  H01L21/02131 ,  C23C16/345 ,  C23C16/52

Abstract: A substrate processing method includes providing a substrate with a silicon-containing film in a chamber, supplying a process gas containing an HF gas, a phosphorus halide gas, and at least one gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas into the chamber to generate plasma, and etching the silicon-containing film in the substrate.

公开(公告)号：US20230207343A1

公开(公告)日：2023-06-29

申请号：US18114998

申请日：2023-02-28

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/02

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32449 ,  H01J37/32715 ,  H01J2237/332 ,  H01J2237/334

Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.

公开(公告)号：US20220389584A1

公开(公告)日：2022-12-08

申请号：US17830877

申请日：2022-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryutaro SUDA ,  Maju Tomura ,  Susumu Nogami ,  Hideaki Yakushiji ,  Takahiro Murakami ,  Yusuke Wako

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52

Abstract: A shower head for plasma processing includes a body part having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces. The plurality of inner side surfaces is configured to define a plurality of gas holes penetrating through the body part from the first surface to the second surface. The second surface is made of a first corrosion-resistant material.

公开(公告)号：US20220359167A1

公开(公告)日：2022-11-10

申请号：US17736009

申请日：2022-05-03

Applicant: Tokyo Electron Limited

Inventor： Takatoshi ORUI ,  Ryutaro SUDA ,  Yoshihide KIHARA ,  Maju TOMURA ,  Kae KUMAGAI

IPC: H01J37/32

Abstract: A substrate processing method comprising: providing a substrate having a silicon-containing dielectric film in the substrate support; and generating plasma from a processing gas including a hydrogen- and fluorine-containing gas to etch the silicon-containing dielectric film, wherein the etching step comprises supplying the processing gas into the chamber, supplying a first radio-frequency signal for generating the plasma to the substrate support or the upper electrode, and supplying a first electrical bias to the upper electrode.

公开(公告)号：US20220199412A1

公开(公告)日：2022-06-23

申请号：US17692227

申请日：2022-03-11

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311

Abstract: An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

公开(公告)号：US20220157616A1

公开(公告)日：2022-05-19

申请号：US17528196

申请日：2021-11-17

Applicant: Tokyo Electron Limited

Inventor： Kae KUMAGAI ,  Ryutaro SUDA ,  Maju TOMURA ,  Kenji OUCHI ,  Hiroki MURAKAMI ,  Munehito KAGAYA ,  Shuichiro SAKAI

IPC: H01L21/311 ,  H01J37/32

Abstract: A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more.

公开(公告)号：US20220093367A1

公开(公告)日：2022-03-24

申请号：US17469895

申请日：2021-09-09

Applicant: Tokyo Electron Limited

Inventor： Koki TANAKA ,  Ryu NAGAI ,  Takatoshi ORUI ,  Ryutaro SUDA

IPC: H01J37/32

Abstract: A disclosed etching method includes (a) forming a protective film on a surface in a chamber. The etching method further includes (b) etching an etch film of a substrate by using hydrogen fluoride within the chamber. The substrate includes the etch film and a mask provided on the etch film. The protective film is formed of the same type of material as a material of the mask.

公开(公告)号：US20210143028A1

公开(公告)日：2021-05-13

申请号：US17090991

申请日：2020-11-06

Applicant: Tokyo Electron Limited

Inventor： Takahiro YOKOYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Ryutaro SUDA ,  Takatoshi ORUI

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/02

Abstract: An etching method enables plasma etching of a silicon-containing film with reduced lateral etching. The etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film. The etching method further includes setting a flow rate proportion of a phosphorus-containing gas with respect to a total flow rate of the process gas so as to establish a predetermined ratio of an etching rate of an alternate stack of a silicon oxide film and a silicon nitride film to an etching rate of the silicon oxide film.