公开(公告)号：US20080171407A1

公开(公告)日：2008-07-17

申请号：US11972989

申请日：2008-01-11

申请人： Hajime Nakabayashi ,  Takuya Sugawara ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Yoshitsugu Tanaka

发明人： Hajime Nakabayashi ,  Takuya Sugawara ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Yoshitsugu Tanaka

IPC分类号： H01L21/82

CPC分类号： H01L29/66818

摘要： A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r1 of the sacrificial oxide film is higher than an etching rate r2 of the buried oxide layer during the etching.

摘要翻译： 公开了通过使用能够抑制底切形成的SOI（硅绝缘体）晶片简单且可靠地制造鳍式场效应晶体管的方法。 该方法包括：通过选择性地干蚀刻单晶硅层形成鳍形突起，直到暴露底层掩埋氧化物层; 通过氧化所述突起的表面而形成牺牲氧化膜，所述表面包括其上的损伤; 以及通过蚀刻去除所述牺牲氧化膜，形成具有干净表面的翅片，其中所述牺牲氧化膜的蚀刻速率r 1 1高于蚀刻速率r 2 的蚀刻期间的掩埋氧化物层。

公开(公告)号：US07955922B2

公开(公告)日：2011-06-07

申请号：US11972989

申请日：2008-01-11

申请人： Hajime Nakabayashi ,  Takuya Sugawara ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Yoshitsugu Tanaka

发明人： Hajime Nakabayashi ,  Takuya Sugawara ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Yoshitsugu Tanaka

IPC分类号： H01L21/8238

CPC分类号： H01L29/66818

摘要： A method for manufacturing a fin-type field effect transistor simply and securely by using a SOI (Silicon On Insulator) wafer, capable of suppressing an undercut formation, is disclosed. The method includes forming a fin-shaped protrusion by selectively dry-etching a single crystalline silicon layer until an underlying buried oxide layer is exposed; forming a sacrificial oxide film by oxidizing a surface of the protrusion including a damage inflicted thereon; and forming a fin having a clean surface by removing the sacrificial oxide film by etching, wherein an etching rate r1 of the sacrificial oxide film is higher than an etching rate r2 of the buried oxide layer during the etching.

摘要翻译： 公开了通过使用能够抑制底切形成的SOI（硅绝缘体）晶片简单且可靠地制造鳍式场效应晶体管的方法。 该方法包括：通过选择性地干蚀刻单晶硅层形成鳍形突起，直到暴露底层掩埋氧化物层; 通过氧化所述突起的表面而形成牺牲氧化膜，所述表面包括其上的损伤; 并且通过蚀刻去除牺牲氧化膜，形成具有干净表面的翅片，其中牺牲氧化膜的蚀刻速率r1高于蚀刻期间掩埋氧化物层的蚀刻速率r2。

公开(公告)号：US07910493B2

公开(公告)日：2011-03-22

申请号：US11911621

申请日：2006-04-14

申请人： Junichi Kitagawa ,  Takashi Kobayashi

发明人： Junichi Kitagawa ,  Takashi Kobayashi

IPC分类号： H01L21/32 ,  H01L21/469

CPC分类号： H01L21/3185 ,  H01J37/3222 ,  H01L21/28247 ,  H01L21/28273

摘要： A nitrided region is formed on a surface of a polysilicon layer by a nitriding treatment wherein plasma of a processing gas is generated by introducing microwaves into a processing chamber by a planar antenna having a plurality of slots. Then, a CVD oxide film or the like is formed on the nitrided region and after patterning the polysilicon layer and the like after the prescribed shape, and then, a thermal oxide film is formed by thermal oxidation on exposed side walls and the like of the polysilicon layer by having the nitrided region as an oxidation barrier layer. Thus, generation of bird's beak can be suppressed in the process at a temperature lower than the temperature in a conventional process.

摘要翻译： 通过氮化处理在多晶硅层的表面上形成氮化区域，其中通过具有多个槽的平面天线将微波引入处理室来产生处理气体的等离子体。 然后，在氮化区域上形成CVD氧化膜等，在形成规定形状后的多晶硅层等之后形成CVD氧化膜等，然后在暴露的侧壁等上形成热氧化膜 通过使氮化区域作为氧化阻挡层，形成多晶硅层。 因此，在比常规方法中的温度低的温度下，可以抑制鸟喙的产生。

公开(公告)号：US07972973B2

公开(公告)日：2011-07-05

申请号：US12443137

申请日：2007-09-28

申请人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

发明人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C14/00 ,  C23C8/36

CPC分类号： H01L21/76232 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/3143 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/4236 ,  H01L29/66795

摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

摘要翻译： 本发明提供一种形成氧化硅膜的方法，其具有基本上均匀的膜厚度，并且不受等离子体氧化工艺的优点的保证，在受加工物体上设置的图案中的致密部位和散射部位的影响 在低压和低氧浓度条件下进行。 在该方法中，在等离子体处理装置的处理室中，将处理气体的等离子体施加到具有凹凸图案的物体的表面，以氧化物体表面上的硅，从而形成硅 氧化膜。 在处理气体中的氧的比例在0.1〜10％的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体，用等离子体氧化法， 具有形成在其中的多个通孔，设置在处理室中用于产生等离子体的区域和待处理物体之间。

公开(公告)号：US20100093186A1

公开(公告)日：2010-04-15

申请号：US12443137

申请日：2007-09-28

申请人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

发明人： Takashi Kobayashi ,  Toshihiko Shinozawa ,  Yoshiro Abe ,  Junichi Kitagawa

IPC分类号： H01L21/316 ,  H01L21/3065

CPC分类号： H01L21/76232 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/28247 ,  H01L21/3143 ,  H01L21/31662 ,  H01L21/3185 ,  H01L29/4236 ,  H01L29/66795

摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

公开(公告)号：US20090053903A1

公开(公告)日：2009-02-26

申请号：US11574422

申请日：2005-08-30

申请人： Takashi Kobayashi ,  Junichi Kitagawa

发明人： Takashi Kobayashi ,  Junichi Kitagawa

IPC分类号： H01L21/316 ,  G06F19/00 ,  B05C11/00

CPC分类号： H01L21/31612 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/32105 ,  H01L29/40114 ,  H01L29/40117

摘要： A plasma processing apparatus 100 of the RLSA type includes a planar antenna with a plurality of slots formed therein, by which microwaves are supplied into a process chamber to generate plasma. In this apparatus, poly-silicon oxidation is performed at a pressure of 67 to 667 Pa inside the chamber, a temperature of 300 to 600° C., and a microwave power of 1,000 to 3,500 W, while a process gas containing Ar gas at a rate of 100 to 2,000 mL/min and O2 gas at a rate of 1 to 500 mL/min is used with O2 gas/Ar gas ratio set to be 0.5 to 5%.

摘要翻译： RLSA型的等离子体处理装置100包括其中形成有多个槽的平面天线，通过该平面天线将微波供应到处理室中以产生等离子体。 在该装置中，在室内67〜667Pa的压力，温度为300〜600℃，微波功率为1000〜3,500W的范围内进行多硅氧化，而含有Ar气的工艺气体 使用100至2000mL / min的速率和1至500mL / min的O 2气体，其中O 2气体/ Ar气体比设定为0.5至5％。

公开(公告)号：US08387560B2

公开(公告)日：2013-03-05

申请号：US11632779

申请日：2005-07-21

申请人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

发明人： Caizhong Tian ,  Kiyotaka Ishibashi ,  Junichi Kitagawa ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211

摘要： The present invention provides a plasma processing unit comprising: a processing vessel having an opening on a ceiling side thereof, and capable of creating a vacuum therein; a stage disposed in the processing vessel, for placing thereon an object to be processed; a top plate made of a dielectric, the top plate being hermetically fitted in the opening and allowing a microwave to pass therethrough; a planar antenna member disposed on the top plate, the planar antenna member being provided with a plurality of microwave radiating holes for radiating a microwave for plasma generation toward an inside of the processing vessel; a slow-wave member disposed on the planar antenna member, for shortening a wavelength of a microwave; and a microwave interference restraining part disposed on a lower surface of the top plate, the microwave interference restraining part separating the lower surface into a plurality of concentric zones and restraining a microwave interference between the zones.

摘要翻译： 本发明提供一种等离子体处理单元，包括：处理容器，其顶部具有开口，能够在其中产生真空; 设置在处理容器中的用于在其上放置待处理物体的台阶; 由电介质制成的顶板，顶板气密地装配在开口中并允许微波通过; 平面天线部件，其设置在所述顶板上，所述平面天线部件设置有多个微波辐射孔，用于朝向所述处理容器的内部放射用于等离子体产生的微波; 设置在所述平面天线构件上的慢波构件，用于缩短微波的波长; 以及微波干扰抑制部，其设置在所述顶板的下表面上，所述微波干涉抑制部将所述下表面分割为多个同心区域，并抑制所述区域之间的微波干扰。

公开(公告)号：US08318267B2

公开(公告)日：2012-11-27

申请号：US12301770

申请日：2007-05-22

申请人： Yoshiro Kabe ,  Junichi Kitagawa ,  Sunao Muraoka

发明人： Yoshiro Kabe ,  Junichi Kitagawa ,  Sunao Muraoka

IPC分类号： C23C16/511

CPC分类号： C23C8/36 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/76224

摘要： An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film.

摘要翻译： 将其表面上具有硅的待处理物体装载到处理室中。 在处理室中产生含有氧气和氮气的处理气体的等离子体。 待处理物体的表面上的硅被等离子体氧化，从而形成氧化硅膜。

公开(公告)号：US20120184111A1

公开(公告)日：2012-07-19

申请号：US13499055

申请日：2010-09-29

申请人： Taichi Monden ,  Hideo Nakamura ,  Junichi Kitagawa

发明人： Taichi Monden ,  Hideo Nakamura ,  Junichi Kitagawa

IPC分类号： H01L21/318 ,  C23C16/50

CPC分类号： C23C8/36 ,  C23C8/04 ,  H01J37/32082 ,  H01J2237/3387 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/3211 ,  H01L21/76224 ,  H01L21/76232 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/513 ,  H01L29/7881

摘要： A selective plasma nitriding method includes mounting an object to be processed on a mounting table in a processing chamber of a plasma processing apparatus, the object having a silicon surface and a silicon compound layer exposed; setting a pressure in the processing chamber within the range of about 66.7 Pa to 667 Pa; and generating a nitrogen-containing plasma while applying a bias voltage to the object by supplying to the mounting table a high frequency power with an output of about 0.1 W/cm2 to 1.2 W/cm2 per unit area of the object. The plasma nitriding method further includes selectively nitriding the silicon surface by the nitrogen-containing plasma to form a silicon nitride film.

摘要翻译： 选择性等离子体氮化方法包括将待处理物体安装在等离子体处理设备的处理室中的安装台上，该物体具有硅表面和硅化合物层的暴露; 将处理室中的压力设定在约66.7Pa至667Pa的范围内; 以及通过向所述安装台供给每单位面积的约0.1W / cm 2至1.2W / cm 2的输出的高频功率，向所述物体施加偏置电压而产生含氮等离子体。 等离子体氮化方法还包括通过含氮等离子体选择性地氮化硅表面以形成氮化硅膜。

公开(公告)号：US08067809B2

公开(公告)日：2011-11-29

申请号：US11576499

申请日：2005-09-30

申请人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Junichi Kitagawa ,  Shigenori Ozaki ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/02

CPC分类号： H01L29/792 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/513

摘要： A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricating method operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, including introducing an oxynitriding species previously diluted by plasma excitation gas into a plasma processing apparatus, generating an oxynitriding species by a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.

摘要翻译： 具有优异的栅极绝缘膜的氮浓度分布的电特性（写/擦除特性）的半导体存储装置及其制造方法。 半导体器件制造方法通过将形成在半导体衬底和栅电极之间的栅极绝缘膜转移电荷，包括将先前由等离子体激发气体稀释的氮氧化物质引入到等离子体处理装置中，通过等离子体产生氮氧化物质，以及 在半导体衬底上形成氧氮化物膜作为栅极绝缘膜。 氮氧化物质相对于引入等离子体处理装置的气体的总体积含有0.00001〜0.01％的NO气体。